SEMIPACK®3 new
Thyristor / Diode Modules
SKKH 280
SKKT 280
Features
   
   

   
  
   
    ! "# $#%
Typical Applications
&'  
)   *
+'  
 
)  , 
*
  
) *
1) -   
2)     
SKKT SKKH
./-0 .//0 .&/0 1/0- 2 334 + )5 ,   *
. . 1+. 2 %64 + ) 7648 2 9: ;'*
%744 %444 -<< %64=%4! 3 -<< %64=%4! 3
%#44 %%44 -<< %64=%%! 3 -<< %64=%%! 3
Symbol Conditions Values Units
1+.  7648 2 9: )6$* ;'8 %64 )%$% * +
1-0 ,> 2 %$ ;'8 74  6$44 +
,> 2 7%$ ;'8 74  9$44 +
? ,> 2 %$ ;'8 6# 74  #"7444 +?
,> 2 7%$ ;'8 6# 74  %67444 +?
.,> 2 %$ ;'8 12 9$4 + 5 7$$ .
.)@* ,> 2 7%$ ;' 5 4: .
,> 2 7%$ ;' 5 49$ A
1&&8 1/& ,> 2 7%$ ;'8 ./& 2 .//08 .&& 2 .&/0 5 "4 +
 ,> 2 %$ ;'8 1B2 7 +8 B= 2 7 +=C 7 C
 .&2 4"9 D .&/0 % C
)=* ,> 2 7%$ ;' 5 %$4 +=C
),=* ,> 2 7%$ ;' 5 7444 .=C
E,> 2 7%$ ;' $4 7$4 C
1,> 2 %$ ;'8  = 5 7$4 = $44 +
1,> 2 %$ ;'8 /B2 ## A8  = 5 #44 = %444 +
.B ,> 2 %$ ;'8    # .
1B ,> 2 %$ ;'8    %44 +
.B& ,> 2 7%$ ;'8   5 4%$ .
1B& ,> 2 7%$ ;'8   5 74 +
/)>F*  8   =   477 = 44$$ <=G
/)>F*  7648   =   477" = 44$6 <=G
/)>F*  7%48   =   47# = 44"$ <=G
/)F*   =   443 = 44% <=G
,> F 34 H 7%$ ;'
 F 34 H 7%$ ;'
. $4 8    8 7 = 7  3644 = 3444 .I
0 J : K 7$ L7* M
0  : K 7$ L%* M
$ D :67 =?
5 "44
' -<< + 9#
-<< + 9"
SKKT 280, SKKH 280 THYRISTOR BRIDGE,SCR,BRIDGE
1 21-09-2005 HER © by SEMIKRON
Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.
RECTIFIER,DIODE,THYRISTOR,MODULE
2 21-09-2005 HER © by SEMIKRON
Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time
SKKT 280, SKKH 280 THYRISTOR BRIDGE,SCR,BRIDGE
3 21-09-2005 HER © by SEMIKRON
Fig. 9 Gate trigger characteristics
Dimensions in mm
' + 9# )-<<*
' + 9" -<<
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
RECTIFIER,DIODE,THYRISTOR,MODULE
4 21-09-2005 HER © by SEMIKRON