© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW800 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 3.6 A
IDM TC= 25°C, pulse width limited by TJM 14.4 A
IAR TC= 25°C 3.6 A
EAR TC= 25°C 10mJ
EAS 400 mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C 100 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220 4 g
TO-263 2 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
lInternational standard packages
lLow RDS (on)
lRated for unclamped Inductive load
Switching (UIS)
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 800 V
VGS(th) VDS = VGS, ID = 1 mA 2.5 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C50mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 3.6 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
HiPerFETTM
Power MOSFETs
VDSS = 800 V
ID25 = 3.6 A
RDS(on) = 3.6 W
trr £ 250 ns
Preliminary data sheet
G
S
TO-263 (IXFA)
GDS
TO-220 (IXFP)
G = Gate D = Drain
S = Source TAB = Drain
D (TAB)
D (TAB)
98746 (09/00)
IXFA 3N80
IXFP 3N80
http://store.iiic.cc/
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 ID25, pulse test 2.5 3.4 S
Ciss 685 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 73 pF
Crss 16 pF
td(on) 12 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 11 ns
td(off) RG = 12 W (External), 25 n s
tf14 ns
Qg(on) 24 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 6nC
Qgd 9nC
RthJC 1.25 K/W
RthCK (TO-220) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 3.6 A
ISM Repetitive; pulse width limited by TJM 14.4 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr 250 ns
QRM IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.52 mC
IRM 1.8 A
TO-263 (IXFA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
TO-220 (IXFP) Outline
IXFA 3N80
IXFP 3N80
http://store.iiic.cc/
