© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 12N100Q 12 A
10N100Q 10 A
IDM TC= 25°C, 12N100Q 48 A
pulse width limited by TJM 10N100Q 40 A
IAR TC= 25°C 12N100Q 12 A
10N100Q 10 A
EAR TC= 25°C 30mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, High dv/dt
Features
zIXYS advanced low Qg process
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zUnclamped Inductive Switching (UIS)
rated
zMolding epoxies meet UL 94 V-0
flammability classification
Advantages
zEasy to mount
zSpace savings
zHigh power density
97539D(12/02)
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFETTM
Power MOSFETs
Q Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
VDSS ID25 RDS(on)
IXFH/IXFT12N100Q 1000 V 12 A 1.05 ΩΩ
ΩΩ
Ω
IXFH/IXFT10N100Q 1000 V 10 A 1.20 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 1000 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 50µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 12N100Q 1.05 Ω
10N100Q 1.20 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 4 10 S
Ciss 2900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 315 pF
Crss 50 pF
td(on) 20 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns
td(off) RG = 2 Ω (External), 40 n s
tf15 ns
Qg(on) 90 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 nC
Qgd 40 nC
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 12 A
ISM Repetitive; pulse width limited by TJM 48 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 200 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.6 µC
IRM 7A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
IXFH/IXFT 12N100Q
IXFH/IXFT 10N100Q
© 2002 IXYS All rights reserved
VGS - Volts
34567
ID - Amperes
0
2
4
6
8
10
12
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
4
8
12
16
TJ - Degrees C
25 50 75 100 125 150
RDS(ON) - Normalized
1.0
1.5
2.0
2.5
ID = 6A
ID - Amperes
048121620
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VDS - Volts
0 6 12 18 24 30
ID - Amperes
0
3
6
9
12
15
VDS - Volts
0 4 8 12 16 20
ID - Amperes
0
4
8
12
16
20
5V
VGS = 10V
VGS = 10V
9V
8V
7V
TJ = 125OC
VGS = 10V
TJ = 25OC
6V
5V
TJ = 25oC
ID = 12A
TJ = 25OC
TJ = 125oC
VGS = 10V
9V
8V
7V
TJ = 125OC
6V
Figure 2. Output Characteristics at 125OCFigure 1. Output Characteristics at 25OC
Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves
Figure 3. RDS(on) normalized to value at ID = 12A Figure 4. RDS(on) normalized to value at ID = 12A
IXFH/IXFT 12N100Q
IXFH/IXFT 10N100Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
VDS - Volts
10 100 1000
ID - Amperes
0.1
1
10
100
Pulse Width - Seconds
10-5 10-4 10-3 10-2 10-1 100101
R(th)JC - K/W
0.001
0.01
0.1
1
VDS - Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
50
100
250
500
1000
2500
5000
Gate Charge - nC
0 20406080100
VGS - Volts
0
2
4
6
8
10
12
Crss
Coss
Ciss
VDS = 500V
ID = 6A
f = 1MHz
TC = 25OC10ms
1ms
100ms
DC
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
0.1ms
D=0.2
VSD - Volts
0.2 0.4 0.6 0.8 1.0 1.2
ID - Amperes
0
5
10
15
20
25
30
TJ = 125OC
TJ = 25OC
D=0.5
Figure 7. Gate Charge
Figure 9. Source Current vs. Source to Drain Voltage
Figure 8. Capacitance Curves
Figure 11. Transient Thermal Resistance
Figure 10. Forward Bias Safe Operating Area
IXFH/IXFT 12N100Q
IXFH/IXFT 10N100Q
