DPG60C300PC HiPerFRED VRRM = 300 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300PC Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300PC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25C 1 A VR = 300 V TVJ = 150C 0.1 mA TVJ = 25C 1.35 V 1.66 V 1.08 V IF = forward voltage drop min. 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 C TC = 140C rectangular 1.43 V T VJ = 175 C 30 A TVJ = 175 C 0.70 V d = 0.5 for power loss calculation only 11.1 m 0.85 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 42 pF I RM max. reverse recovery current TVJ = 25 C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.25 TC = 25C 30 A; VR = 200 V -di F /dt = 200 A/s 175 360 W A TVJ = 125C 7 A TVJ = 25 C 35 ns TVJ = 125C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C Weight FC 2 20 mounting force with clip Product Marking D P G 60 C 300 PC IXYS Zyyww Logo 60 N Part number XXXXXXXXX Part No. g Assembly Line = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-263AB (D2Pak) (2) 000000 Date Code Assembly Code Ordering Standard Part Number DPG60C300PC Similar Part DPG60C300HB DPG60C300QB DPG60C300HJ DPF60C300HB DPG80C300HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C300PC Package TO-247AD (3) TO-3P (3) ISOPLUS247 (3) TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tape & Reel Code No. 503494 Voltage class 300 300 300 300 300 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.7 V R 0 max slope resistance * 7.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300PC Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG60C300PC Fast Diode 16 80 0.4 IF = 60 A 30 A 15 A 70 60 14 12 0.3 50 IF TVJ = 150C IRM Qrr 40 [A] 6 [C] 20 4 0.1 25C TVJ = 125C VR = 200 V 10 0.0 0.4 0.8 1.2 1.6 0 2.0 VF [V] 200 400 600 0 1.0 Kf 0.8 50 Qrr 500 10 400 8 300 6 [ns] 80 120 160 TVJ [C] 200 400 600 0 -diF /dt [A/s] 2 200 0 600 400 -diF /dt [A/s] Fig. 5 Typ. reverse recov. time trr versus -diF /dt 16 TVJ = 125C VR = 200 V IF = 30 A 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 4 100 20 40 VFR [V] 200 30 0.4 12 tfr IF = 60 A [ns] 40 30 A 15 A IRM VFR tfr 60 trr 600 600 TVJ = 125C VR = 200 V 1.2 400 Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 70 0 200 -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 0.2 TVJ = 125C VR = 200 V 2 -diF /dt [A/s] Fig. 1 Forward current IF versus VF 0.6 10 8 0.2 [A] 30 IF = 60 A 30 A 15 A Fig. 6 Typ. forward recov. voltage VFR & tfr versus diF /dt 1 TVJ = 125C 14 VR = 200 V 12 IF = 15 A 10 Erec ZthJC 30 A 60 A 8 [J] 6 [K/W] Rthi [K/W] 4 0.139 0.176 0.305 0.23 2 0 200 400 600 0.1 0.001 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 0.01 0.1 ti [s] 0.00028 0.0033 0.028 0.17 1 10 t [s] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b