MCP73832T-2ACI/OT - Microchip Technology, Inc.

 2005-2013 Microchip Technology Inc. DS20001984F-page 1

MCP73831/2

Features

• Linear Charge Management Controller:

- Integrated Pass Transistor

- Integrated Current Sense

- Reverse Discharge Protection

• High Accuracy Preset Voltage Regulation: + 0.75%

• Four Voltage Regulation Options:

- 4.20V, 4.35V, 4.40V, 4.50V

• Programmable Charge Current: 15 mA to 500 mA

• Selectable Preconditioning:

- 10%, 20%, 40%, or Disable

• Selectable End-of-Charge Control:

- 5%, 7.5%, 10%, or 20%

• Charge Status Output

- Tri-State Output - MCP73831

- Open-Drain Output - MCP73832

• Automatic Power-Down

• Thermal Regulation

• Temperature Range: -40°C to +85°C

• Packaging:

- 8-Lead, 2 mm x 3 mm DFN

- 5-Lead, SOT-23

Applications

• Lithium-Ion/Lithium-Polymer Battery Chargers

• Personal Data Assistants

• Cellular Telephones

• Digital Cameras

• MP3 Players

• Bluetooth Headsets

• USB Chargers

Typical Application

Description:

The MCP73831/2 devices are highly advanced linear

charge management controllers for use in space-

limited, cost-sensitive applications. The MCP73831/2

are available in an 8-Lead, 2 mm x 3 mm DFN package

or a 5-Lead, SOT-23 package. Along with their small

physical size, the low number of external components

required make the MCP73831/2 ideally suited for

portable applications. For applications charging from a

USB port, the MCP73831/2 adhere to all the

specifications governing the USB power bus.

The MCP73831/2 employ a constant-current/constant-

voltage charge algorithm with selectable

preconditioning and charge termination. The constant

voltage regulation is fixed with four available options:

4.20V, 4.35V, 4.40V or 4.50V, to accommodate new,

emerging battery charging requirements. The constant

current value is set with one external resistor. The

MCP73831/2 devices limit the charge current based on

die temperature during high power or high ambient

conditions. This thermal regulation optimizes the

charge cycle time while maintaining device reliability.

Several options are available for the preconditioning

threshold, preconditioning current value, charge

termination value and automatic recharge threshold.

The preconditioning value and charge termination

value are set as a ratio or percentage of the

programmed constant current value. Preconditioning

can be disabled. Refer to Section 1.0 “Electrical

Characteristics” for available options and the

Product Identification System for standard options.

The MCP73831/2 devices are fully specified over the

ambient temperature range of -40°C to +85°C.

Package Types

STAT

VDD

VSS

PROG

VBAT +

Single

Li-Ion

Cell

MCP73831

500 mA Li-Ion Battery Charger

VIN

4.7 μF

470Ω2kΩ

4.7 μF

VBAT

VSS

VDD

PROG

STAT

MCP73831/2

2×3 DFN*

VBAT

VDD

VBAT

VSS

5STAT

PROGVDD

* Includes Exposed Thermal Pad (EP); see Ta b l e 3 - 1 .

MCP73831/2

SOT-23-5

Miniature Single-Cell, Fully Integrated Li-Ion,

Li-Polymer Charge Management Controllers

MCP73831/2

DS20001984F-page 2  2005-2013 Microchip Technology Inc.

Functional Block Diagram

REFERENCE

GENERATOR

VREF(1.22V)

VBAT

VDD

STAT

PROG

VBAT

G=0.001

VSS

DIRECTION

CONTROL

477 kΩ

255 kΩ

UVLO

SHDN

DIRECTION

CONTROL

0.5 µA

PRECONDITION

6µA

TERMINATION

43.6 kΩ

3.9 kΩ

111 kΩ

190 kΩ

7kΩ

15 kΩ

182.3 kΩ

111 kΩ

CHARGE

89 kΩ

361 kΩ

100 kΩ

0.5 µA

VDD

MCP73831

ONLY

 2005-2013 Microchip Technology Inc. DS20001984F-page 3

MCP73831/2

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

VDD...................................................................................7.0V

All Inputs and Outputs w.r.t. VSS ............... -0.3 to (VDD+0.3)V

Maximum Junction Temperature, TJ............ Internally Limited

Storage temperature .....................................-65°C to +150°C

ESD protection on all pins:

Human Body Model (1.5 kΩ in Series with 100 pF).......≥ 4kV

Machine Model (200 pF, No Series Resistance) .............400V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational listings of this specification

is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.

Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Supply Input

Supply Voltage VDD 3.75 — 6 V

Supply Current ISS — 510 1500 µA Charging

— 53 200 µA Charge Complete,

No Battery

— 25 50 µA PROG Floating

—1 5µAV

DD < (VBAT - 50 mV)

—0.1 2µAV

DD < VSTOP

UVLO Start Threshold VSTART 3.3 3.45 3.6 V VDD Low-to-High

UVLO Stop Threshold VSTOP 3.2 3.38 3.5 V VDD High-to-Low

UVLO Hysteresis VHYS —70—mV

Voltage Regulation (Constant-Voltage Mode)

Regulated Output Voltage VREG 4.168 4.20 4.232 V PIC18FXXXX-2

4.317 4.35 4.383 V PIC18FXXXX-3

4.367 4.40 4.433 V PIC18FXXXX-4

4.466 4.50 4.534 V PIC18FXXXX-5

VDD = [VREG(typical)+1V]

IOUT = 10 mA

TA = -5°C to +55°C

Line Regulation |(ΔVBAT/

VBAT)/ΔVDD|

— 0.09 0.30 %/V VDD = [VREG(typical)+1V] to

6V, IOUT = 10 mA

Load Regulation |ΔVBAT/VBAT| — 0.05 0.30 % IOUT = 10 mA to 50 mA

VDD = [VREG(typical)+1V]

Supply Ripple Attenuation PSRR — 52 —- dB IOUT=10 mA, 10Hz to 1 kHz

—47—dBI

OUT=10 mA, 10Hz to 10 kHz

—22—dBI

OUT=10 mA, 10Hz to 1 MHz

Current Regulation (Fast Charge Constant-Current Mode)

Fast Charge Current

Regulation

IREG 90 100 110 mA PROG = 10 kΩ

450 505 550 mA PROG = 2.0 kΩ, Note 1

12.5 14.5 16.5 mA PROG = 67 kΩ

TA = -5°C to +55°C

Note 1: Not production tested. Ensured by design.

MCP73831/2

DS20001984F-page 4  2005-2013 Microchip Technology Inc.

Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)

Precondition Current

Ratio

IPREG / IREG 7.5 10 12.5 % PROG = 2.0 kΩ to 10 kΩ

15 20 25 % PROG = 2.0 kΩ to 10 kΩ

30 40 50 % PROG = 2.0 kΩ to 10 kΩ

— 100 — % No Preconditioning

TA = -5°C to +55°C

Precondition Voltage

Threshold Ratio

VPTH / VREG 64 66.5 69 % VBAT Low-to-High

69 71.5 74 % VBAT Low-to-High

Precondition Hysteresis VPHYS —110—mVV

BAT High-to-Low

Charge Termination

Current Ratio

ITERM / IREG 3.75 5 6.25 % PROG = 2.0 kΩ to 10 kΩ

5.6 7.5 9.4 % PROG = 2.0 kΩ to 10 kΩ

8.5 10 11.5 % PROG = 2.0 kΩ to 10 kΩ

15 20 25 % PROG = 2.0 kΩ to 10 kΩ

TA = -5°C to +55°C

Automatic Recharge

Recharge Voltage

Threshold Ratio

VRTH / VREG 91.5 94.0 96.5 % VBAT High-to-Low

94 96.5 99 % VBAT High-to-Low

Pass Transistor ON-Resistance

ON-Resistance RDSON — 350 — mΩVDD = 3.75V, TJ = 105°C

Battery Detection

Battery Detection Current IBAT_DET —6—µAV

BAT Source Current

No-Battery-Present

Threshold

VNO_BAT —V

REG +

100 mV

—VV

BAT Voltage >= VNO_BAT for

No Battery condition

No-Battery-Present

Impedance

ZNO_BAT 2——MΩVBAT Impedance >= ZNO_BAT

for No Battery condition,

Note 1

Battery Discharge Current

Output Reverse Leakage

Current

IDISCHARGE — 0.15 2 µA PROG Floating

—0.25 2µAV

DD Floating

—0.15 2µAV

DD < VSTOP

— -5.5 -15 µA Charge Complete

Status Indicator – STAT

Sink Current ISINK ——25mA

Low Output Voltage VOL —0.4 1VI

SINK = 4 mA

Source Current ISOURCE ——35mA

High Output Voltage VOH —V

DD-0.4 VDD - 1 V ISOURCE = 4 mA (MCP73831)

Input Leakage Current ILK — 0.03 1 µA High-Impedance

PROG Input

Charge Impedance

Range

RPROG 2—67kΩ

Minimum Shutdown

Impedance

RPROG 70 — 200 kΩ

Automatic Power Down

Entry Threshold

VPDENTER VDD<(VBAT

+20 mV)

VDD<(VBAT

+50 mV)

—3.5V ≤ VBAT ≤ VREG

VDD Falling

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.

Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Note 1: Not production tested. Ensured by design.

 2005-2013 Microchip Technology Inc. DS20001984F-page 5

MCP73831/2

TEMPERATURE SPECIFICATIONS

Automatic Power Down

Exit Threshold

VPDEXIT —V

DD<(VBAT

+150 mV)

VDD<(VBAT

+200 mV)

3.5V ≤ VBAT ≤ VREG

VDD Rising

Thermal Shutdown

Die Temperature TSD — 150 — °C

Die Temperature

Hysteresis

TSDHYS —10—°C

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.

Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Note 1: Not production tested. Ensured by design.

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V,

TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

UVLO Start Delay tSTART —— 5 msV

DD Low-to-High

Constant-Current Regulation

Transition Time Out of

Preconditioning

tDELAY —— 1 msV

BAT < VPTH to VBAT > VPTH

Current Rise Time Out of

Preconditioning

tRISE —— 1 msI

OUT Rising to 90% of IREG

Termination Comparator

Filter

tTERM 0.4 1.3 3.2 ms Average IOUT Falling

Charge Comparator Filter tCHARGE 0.4 1.3 3.2 ms Average VBAT

Status Indicator

Status Output turn-off tOFF ——200µsI

SINK = 1 mA to 0 mA

Status Output turn-on tON ——200µsI

SINK = 0 mA to 1 mA

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V.

Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Temperature Ranges

Specified Temperature Range TA-40 — +85 °C

Operating Temperature Range TJ-40 — +125 °C

Storage Temperature Range TA-65 — +150 °C

Thermal Package Resistances

5-Lead, SOT-23 θJA — 230 — °C/W 4-Layer JC51-7 Standard

Board, Natural Convection

(Note 2)

8-Lead, 2 mm x 3 mm, DFN θJA — 76 — °C/W 4-Layer JC51-7 Standard

Board, Natural Convection

(Note 1)

Note 1: This represents the minimum copper condition on the PCB (Printed Circuit Board).

2: With large copper area on the PCB, the SOT-23-5 thermal resistance (θJA) can reach a typical value of

130°C/W or better.

MCP73831/2

DS20001984F-page 6  2005-2013 Microchip Technology Inc.

NOTES:

 2005-2013 Microchip Technology Inc. DS20001984F-page 7

MCP73831/2

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

FIGURE 2-1: Battery Regulation Voltage

(VBAT) vs. Supply Voltage (VDD).

FIGURE 2-2: Battery Regulation Voltage

(VBAT) vs. Ambient Temperature (TA).

FIGURE 2-3: Output Leakage Current

(IDISCHARGE) vs. Battery Regulation Voltage

(VBAT).

FIGURE 2-4: Charge Current (IOUT) vs.

Programming Resistor (RPROG).

FIGURE 2-5: Charge Current (IOUT) vs.

Supply Voltage (VDD).

FIGURE 2-6: Charge Current (IOUT) vs.

Supply Voltage (VDD).

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

4.170

4.175

4.180

4.185

4.190

4.195

4.200

4.205

4.210

4.50 4.75 5.00 5.25 5.50 5.75 6.00

Supply Voltage (V)

Battery Regulation Voltage

(V)

MCP73831-2

IOUT = 10 mA

IOUT = 100 mA

IOUT = 450 mA

4.170

4.175

4.180

4.185

4.190

4.195

4.200

4.205

4.210

-40

-30

-20

-10

Ambient Temperature (°C)

Battery Regulation Voltage (V)

MCP73831-2

IOUT = 10 mA

IOUT = 100 mA

IOUT = 450 mA

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

3.00 3.20 3.40 3.60 3.80 4.00 4.20

Battery Regulation Voltage (V)

Output Leakage Current (µA)

+85°C

-40°C

+25°C

100

150

200

250

300

350

400

450

500

2 7 12 17 22 27 32 37 42 47 52 57 62 67

Programming Resistor (kΩ)

Charge Current (mA)

100

101

102

103

104

4.50 4.75 5.00 5.25 5.50 5.75 6.00

Supply Voltage (V)

Charge Current (mA)

RPROG = 10 kΩ

500

502

504

506

508

510

512

514

516

4.50 4.75 5.00 5.25 5.50 5.75 6.00

Supply Voltage (V)

Charge Current (mA)

RPROG = 2 kΩ

MCP73831/2

DS20001984F-page 8  2005-2013 Microchip Technology Inc.

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

FIGURE 2-7: Charge Current (IOUT) vs.

Ambient Temperature (TA).

FIGURE 2-8: Charge Current (IOUT) vs.

Ambient Temperature (TA).

FIGURE 2-9: Charge Current (IOUT) vs.

Junction Temperature (TJ).

FIGURE 2-10: Charge Current (IOUT) vs.

Junction Temperature (TJ).

FIGURE 2-11: Power Supply Ripple

Rejection (PSRR).

FIGURE 2-12: Power Supply Ripple

Rejection (PSRR).

100

101

102

103

104

-40

-30

-20

-10

Ambient Temperature (°C)

Charge Current (mA)

RPROG = 10 kΩ

500

502

504

506

508

510

512

514

516

-40

-30

-20

-10

Ambient Temperature (°C)

Charge Current (mA)

RPROG = 2 kΩ

105

120

105

115

125

135

145

155

Junction Temperature (°C)

Charge Current (mA)

RPROG = 10 kΩ

150

225

300

375

450

525

105

115

125

135

145

155

Junction Temperature (°C)

Charge Current (mA)

RPROG = 2 kΩ

-60

-50

-40

-30

-20

-10

0.01 0.1 1 10 100 1000

Frequency (kHz)

Attenuation (dB)

VAC = 100 mVp-p

IOUT = 10 mA

COUT = 4.7 µF, X7R Ceramic

-60

-50

-40

-30

-20

-10

0.01 0.1 1 10 100 1000

Frequency (kHz)

Attenuation (dB)

VAC = 100 mVp-p

IOUT = 100 mA

COUT = 4.7 µF, X7R Ceramic

 2005-2013 Microchip Technology Inc. DS20001984F-page 9

MCP73831/2

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

FIGURE 2-13: Line Transient Response.

FIGURE 2-14: Line Transient Response.

FIGURE 2-15: Load Transient Response.

FIGURE 2-16: Load Transient Response.

FIGURE 2-17: Complete Charge Cycle

(180 mAh Li-Ion Battery).

FIGURE 2-18: Complete Charge Cycle

(1000 mAh Li-Ion Battery).

-2

100

120

140

160

180

200

Time (µs)

Source Voltage (V)

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

0.05

0.10

Output Ripple (V)

IOUT = 10 mA

COUT = 4.7 µF, X7R Ceramic

-2

100

120

140

160

180

200

Time (µs)

Source Voltage (V)

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

0.05

0.10

Output Ripple (V)

IOUT = 100 mA

COUT = 4.7 µF, X7R Ceramic

-0.05

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

100

120

140

160

180

200

Time (µs)

Output Current (A)

-0.12

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

0.02

0.04

Output Ripple (V)

COUT = 4.7 µF, X7R Ceramic

-0.20

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

100

120

140

160

180

200

Time (µs)

Output Current (A)

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

0.05

0.10

Output Ripple (V)

COUT = 4.7 µF, X7R Ceramic

0.0

1.0

2.0

3.0

4.0

5.0

6.0

100

120

140

160

180

Time (minutes)

Battery Voltage (V)

100

120

Charge Current (mA)

MCP73831-2AC/IOT

VDD = 5.2V

RPROG = 10 kΩ

0.0

1.0

2.0

3.0

4.0

5.0

6.0

120

150

180

210

240

Time (minutes)

Battery Voltage (V)

100

200

300

400

500

600

Charge Current (mA)

MCP73831-2AC/IOT

VDD = 5.2V

RPROG = 2 kΩ

MCP73831/2

DS20001984F-page 10  2005-2013 Microchip Technology Inc.

NOTES:

 2005-2013 Microchip Technology Inc. DS20001984F-page 11

MCP73831/2

3.0 PIN DESCRIPTION

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLES

3.1 Battery Management Input Supply

(VDD)

A supply voltage of [VREG (typical) + 0.3V] to 6V is

recommended. Bypass to VSS with a minimum of

4.7 µF.

3.2 Battery Charge Control Output

(VBAT)

Connect to positive terminal of battery. Drain terminal

of internal P-channel MOSFET pass transistor. Bypass

to VSS with a minimum of 4.7 µF to ensure loop stability

when the battery is disconnected.

3.3 Charge Status Output (STAT)

STAT is an output for connection to an LED for charge

status indication. Alternatively, a pull-up resistor can be

applied for interfacing to a host microcontroller.

STAT is a tri-state logic output on the MCP73831 and

an open-drain output on the MCP73832.

3.4 Battery Management 0V Reference

(VSS)

Connect to negative terminal of battery and input

supply.

3.5 Current Regulation Set (PROG)

Preconditioning, fast charge and termination currents

are scaled by placing a resistor from PROG to VSS.

The charge management controller can be disabled by

allowing the PROG input to float.

3.6 Exposed Thermal Pad (EP)

An internal electrical connection exists between the

Exposed Thermal Pad (EP) and the VSS pin. They must

be connected to the same potential on the Printed

Circuit Board (PCB).

For better thermal performance, it is recommended to

add vias from the land area of EP to a copper layer on

the other side of the PCB.

Pin No.

Symbol Function

DFN SOT-23-5

14 V

DD Battery Management Input Supply

2— V

DD Battery Management Input Supply

33 V

BAT Battery Charge Control Output

4— V

BAT Battery Charge Control Output

5 1 STAT Charge Status Output

62 V

SS Battery Management 0V Reference

7 — NC No Connection

8 5 PROG Current Regulation Set and Charge Control Enable

9— EP

Exposed Thermal Pad (EP); must be connected to VSS.

MCP73831/2

DS20001984F-page 12  2005-2013 Microchip Technology Inc.

NOTES:

 2005-2013 Microchip Technology Inc. DS20001984F-page 13

MCP73831/2

4.0 DEVICE OVERVIEW

The MCP73831/2 are highly advanced linear charge

management controllers. Figure 4-1 depicts the

operational flow algorithm from charge initiation to

completion and automatic recharge.

FIGURE 4-1: Flowchart.

4.1 Undervoltage Lockout (UVLO)

An internal UVLO circuit monitors the input voltage and

keeps the charger in Shutdown mode until the input

supply rises above the UVLO threshold. The UVLO

circuitry has a built in hysteresis of 100 mV.

In the event a battery is present when the input power

is applied, the input supply must rise to a level 150 mV

above the battery voltage before the MCP73831/2

become operational.

The UVLO circuit places the device in Shutdown mode

if the input supply falls to within +50 mV of the battery

voltage. Again, the input supply must rise to a level

150 mV above the battery voltage before the

MCP73831/2 become operational.

The UVLO circuit is always active. Whenever the input

supply is below the UVLO threshold or within +50 mV

of the voltage at the VBAT pin, the MCP73831/2 are

placed in Shutdown mode.

During any UVLO condition, the battery reverse

discharge current is less than 2 µA.

4.2 Battery Detection

A 6 µA (typical) current is sourced by the VBAT pin to

determine if a battery is present or not. If the voltage at

VBAT rises to VREG + 100 mV (typical), the device

assumes that a battery is not present. If the voltage

stays below VREG + 100 mV (typical), the device

assumes that a battery is detected. In order to correctly

detect a battery insertion, the impedance seen by the

VBAT pin before the battery is connected must be

greater than 2 MΩ.

4.3 Charge Qualification

For a charge cycle to begin, all UVLO conditions must

be met and a battery or output load must be present. A

charge current programming resistor must be

connected from PROG to VSS. If the PROG pin is open

or floating, the MCP73831/2 are disabled and the

battery reverse discharge current is less than 2 µA. In

this manner, the PROG pin acts as a charge enable

and can be used as a manual shutdown.

4.4 Preconditioning

If the voltage at the VBAT pin is less than the

preconditioning threshold, the MCP73831/2 enter a

preconditioning or Trickle Charge mode. The

preconditioning threshold is factory set. Refer to

Section 1.0 “Electrical Characteristics” for

preconditioning threshold options and the Product

Identification System for standard options.

In this mode, the MCP73831/2 supply a percentage of

the charge current (established with the value of the

resistor connected to the PROG pin) to the battery. The

percentage or ratio of the current is factory set. Refer to

Section 1.0 “Electrical Characteristics” for

preconditioning current options and the Product Iden-

tification System for standard options.

When the voltage at the VBAT pin rises above the

preconditioning threshold, the MCP73831/2 enter the

Constant-Current or Fast Charge mode.

SHUTDOWN MODE

VDD < VUVLO

VDD < VBAT

PROG > 200 kΩ

STAT = Hi-Z

PRECONDITIONING

MODE

Charge Current = IPREG

STAT = LOW

FAST CHARGE

MODE

Charge Current = IREG

STAT = LOW

CONSTANT VOLTAGE

MODE

Charge Voltage = VREG

STAT = LOW

VBAT < VPTH

VBAT > VPTH

VBAT = VREG

VBAT < VRTH

VBAT > VPTH

IBAT < ITERM

CHARGE COMPLETE

MODE

No Charge Current

STAT = HIGH (MCP73831)

STAT = Hi-Z (MCP73832)

MCP73831/2

DS20001984F-page 14  2005-2013 Microchip Technology Inc.

4.5 Fast Charge Constant-Current

Mode

During the Constant-Current mode, the programmed

charge current is supplied to the battery or load. The

charge current is established using a single resistor

from PROG to VSS. Constant-Current mode is

maintained until the voltage at the VBAT pin reaches the

regulation voltage, VREG

4.6 Constant-Voltage Mode

When the voltage at the VBAT pin reaches the

regulation voltage, VREG

, constant voltage regulation

begins. The regulation voltage is factory set to 4.2V,

4.35V, 4.40V or 4.50V with a tolerance of ±0.75%.

4.7 Charge Termination

The charge cycle is terminated when, during Constant-

Voltage mode, the average charge current diminishes

below a percentage of the programmed charge current

(established with the value of the resistor connected to

the PROG pin). A 1 ms filter time on the termination

comparator ensures that transient load conditions do

not result in premature charge cycle termination. The

percentage or ratio of the current is factory set. Refer to

Section 1.0 “Electrical Characteristics” for charge

termination current options and the Product

Identification System for standard options.

The charge current is latched off and the MCP73831/2

enter a Charge Complete mode.

4.8 Automatic Recharge

The MCP73831/2 continuously monitor the voltage at

the VBAT pin in the Charge Complete mode. If the

voltage drops below the recharge threshold, another

charge cycle begins and current is once again supplied

to the battery or load. The recharge threshold is factory

set. Refer to Section 1.0 “Electrical Characteristics”

for recharge threshold options and the Product

Identification System for standard options.

4.9 Thermal Regulation

The MCP73831/2 limit the charge current based on the

die temperature. The thermal regulation optimizes the

charge cycle time while maintaining device reliability.

Figure 4-2 depicts the thermal regulation for the

MCP73831/2.

FIGURE 4-2: Thermal Regulation.

4.10 Thermal Shutdown

The MCP73831/2 suspend charge if the die tempera-

ture exceeds 150°C. Charging will resume when the

die temperature has cooled by approximately 10°C.

150

225

300

375

450

525

105

115

125

135

145

155

Junction Temperature (°C)

Charge Current (mA)

RPROG = 2 kΩ

 2005-2013 Microchip Technology Inc. DS20001984F-page 15

MCP73831/2

5.0 DETAILED DESCRIPTION

5.1 Analog Circuitry

5.1.1 BATTERY MANAGEMENT INPUT

SUPPLY (VDD)

The VDD pin is the input supply pin for the MCP73831/

2 devices. The MCP73831/2 automatically enter a

Power-Down mode if the voltage on the VDD input falls

below the UVLO voltage (VSTOP). This feature prevents

draining the battery pack when the VDD supply is not

present.

5.1.2 CURRENT REGULATION SET

(PROG)

Fast charge current regulation can be scaled by placing

a programming resistor (RPROG) from the PROG input

to VSS. The program resistor and the charge current

are calculated using the following equation:

The preconditioning trickle charge current and the

charge termination current are ratiometric to the fast

charge current based on the selected device options.

5.1.3 BATTERY CHARGE CONTROL

OUTPUT (VBAT)

The battery charge control output is the drain terminal

of an internal P-channel MOSFET. The MCP73831/2

provide constant current and voltage regulation to the

battery pack by controlling this MOSFET in the linear

region. The battery charge control output should be

connected to the positive terminal of the battery pack.

5.2 Digital Circuitry

5.2.1 STATUS INDICATOR (STAT)

The charge status output of the MCP73831 has three

different states: High (H), Low (L), and High-

Impedance (Hi-Z). The charge status output of the

MCP73832 is open-drain. It has two different states:

Low (L) and High-Impedance (Hi-Z). The charge status

output can be used to illuminate one, two or tri-color

LEDs. Optionally, the charge status output can be used

as an interface to a host microcontroller.

Table 5-1 summarizes the state of the status output

during a charge cycle.

5.2.2 DEVICE DISABLE (PROG)

The current regulation set input pin (PROG) can be

used to terminate a charge at any time during the

charge cycle, as well as to initiate a charge cycle or

initiate a recharge cycle.

Placing a programming resistor from the PROG input to

VSS enables the device. Allowing the PROG input to

float or by applying a logic-high input signal, disables

the device and terminates a charge cycle. When

disabled, the device’s supply current is reduced to

25 µA, typically.

IREG

1000V

RPROG

-----------------

Where:

RPROG =kOhms

IREG = milliampere

TABLE 5-1: STATUS OUTPUT

Charge Cycle State

STAT1

MCP73831 MCP73832

Shutdown Hi-Z Hi-Z

No Battery Present Hi-Z Hi-Z

Preconditioning L L

Constant-Current Fast

Charge

Constant Voltage L L

Charge Complete –

Standby

HHi-Z

MCP73831/2

DS20001984F-page 16  2005-2013 Microchip Technology Inc.

NOTES:

 2005-2013 Microchip Technology Inc. DS20001984F-page 17

MCP73831/2

6.0 APPLICATIONS

The MCP73831/2 are designed to operate in

conjunction with a host microcontroller or in a stand-

alone application. The MCP73831/2 provide the

preferred charge algorithm for Lithium-Ion and Lithium-

Polymer cells. The algorithm uses a constant current

followed by a constant voltage charging method.

Figure 6-1 depicts a typical stand-alone application

circuit, while Figure 6-2 and Figure 6-3 depict the

accompanying charge profile.

FIGURE 6-1: Typical Application Circuit.

FIGURE 6-2: Typical Charge Profile

(180 mAh Battery).

FIGURE 6-3: Typical Charge Profile in

Thermal Regulation (1000 mAh Battery).

6.1 Application Circuit Design

Due to the low efficiency of linear charging, the most

important factors are thermal design and cost, which

are a direct function of the input voltage, output current

and thermal impedance between the battery charger

and the ambient cooling air. The worst-case situation is

when the device has transitioned from the

Preconditioning mode to the Constant-Current mode.

In this situation, the battery charger has to dissipate the

maximum power. A trade-off must be made between

the charge current, cost and thermal requirements of

the charger.

6.1.1 COMPONENT SELECTION

Selection of the external components in Figure 6-1 is

crucial to the integrity and reliability of the charging

system. The following discussion is intended as a guide

for the component selection process.

6.1.1.1 Current Programming Resistor

(RPROG)

The preferred fast charge current for Lithium-Ion cells

is at the 1C rate, with an absolute maximum current at

the 2C rate. For example, a 500 mAh battery pack has

a preferred fast charge current of 500 mA. Charging at

this rate provides the shortest charge cycle times

without degradation to the battery pack performance or

life.

STAT

VDD

VSS

PROG

VBAT +

Single

Li-Ion

Cell

MCP73831

CIN

Li-Ion Battery Charger

RPROG

RLED COUT

REGULATED

WALL CUBE LED

0.0

1.0

2.0

3.0

4.0

5.0

6.0

100

120

140

160

180

Time (minutes)

Battery Voltage (V)

100

120

Charge Current (mA)

MCP73831-2AC/IOT

VDD = 5.2V

RPROG = 10 kΩ

0.0

1.0

2.0

3.0

4.0

5.0

6.0

120

150

180

210

240

Time (minutes)

Battery Voltage (V)

100

200

300

400

500

600

Charge Current (mA)

MCP73831-2AC/IOT

VDD = 5.2V

RPROG = 2 kΩ

MCP73831/2

DS20001984F-page 18  2005-2013 Microchip Technology Inc.

6.1.1.2 Thermal Considerations

The worst-case power dissipation in the battery

charger occurs when the input voltage is at the

maximum and the device has transitioned from the

Preconditioning mode to the Constant-Current mode.

In this case, the power dissipation is:

Power dissipation with a 5V, ±10% input voltage source

is:

This power dissipation with the battery charger in the

SOT-23-5 package will cause thermal regulation to be

entered as depicted in Figure 6-3. Alternatively, the

2mm x 3mm DFN package could be utilized to reduce

charge cycle times.

6.1.1.3 External Capacitors

The MCP73831/2 are stable with or without a battery

load. In order to maintain good AC stability in the

Constant-Voltage mode, a minimum capacitance of

4.7 µF is recommended to bypass the VBAT pin to VSS.

This capacitance provides compensation when there is

no battery load. In addition, the battery and

interconnections appear inductive at high frequencies.

These elements are in the control feedback loop during

Constant-Voltage mode. Therefore, the bypass

capacitance may be necessary to compensate for the

inductive nature of the battery pack.

Virtually any good quality output filter capacitor can be

used, independent of the capacitor’s minimum

Effective Series Resistance (ESR) value. The actual

value of the capacitor (and its associated ESR)

depends on the output load current. A 4.7 µF ceramic,

tantalum or aluminum electrolytic capacitor at the

output is usually sufficient to ensure stability for output

currents up to a 500 mA.

6.1.1.4 Reverse-Blocking Protection

The MCP73831/2 provide protection from a faulted or

shorted input. Without the protection, a faulted or

shorted input would discharge the battery pack through

the body diode of the internal pass transistor.

6.1.1.5 Charge Inhibit

The current regulation set input pin (PROG) can be

used to terminate a charge at any time during the

charge cycle, as well as to initiate a charge cycle or

initiate a recharge cycle.

Placing a programming resistor from the PROG input to

VSS enables the device. Allowing the PROG input to

float or by applying a logic-high input signal, disables

the device and terminates a charge cycle. When

disabled, the device’s supply current is reduced to

25 µA, typically.

6.1.1.6 Charge Status Interface

A status output provides information on the state of

charge. The output can be used to illuminate external

LEDs or interface to a host microcontroller. Refer to

Table 5-1 for a summary of the state of the status

output during a charge cycle.

6.2 PCB Layout Issues

For optimum voltage regulation, place the battery pack

as close as possible to the device’s VBAT and VSS pins.

This is recommended to minimize voltage drops along

the high current-carrying PCB traces.

If the PCB layout is used as a heatsink, adding many

vias in the heatsink pad can help conduct more heat to

the PCB backplane, thus reducing the maximum

junction temperature. Figure 6-4 and Figure 6-5 depict

a typical layout with PCB heatsinking.

FIGURE 6-4: Typical Layout (Top).

FIGURE 6-5: Typical Layout (Bottom).

PowerDissipation VDDMAX VPTHMIN

–()IREGMAX

×=

Where:

VDDMAX = the maximum input voltage

IREGMAX = the maximum fast charge current

VPTHMIN = the minimum transition threshold

voltage

PowerDissipation 5.5V2.7V–()550 mA×1.54W==

COUT

LED

RPROG

CIN

MCP73831

RLED

VBAT VDD

VSS

BAT

 2005-2013 Microchip Technology Inc. DS20001984F-page 19

MCP73831/2

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

Example

AAE

739

Device Code

MCP73831T-2ACI/MC AAE

MCP73831T-2ATI/MC AAF

MCP73831T-2DCI/MC AAG

MCP73831T-3ACI/MC AAH

MCP73831T-4ADI/MC AAJ

MCP73831T-5ACI/MC AAK

MCP73832T-2ACI/MC AAL

MCP73832T-2ATI/MC AAM

MCP73832T-2DCI/MC AAP

MCP73832T-3ACI/MC AAQ

MCP73832T-4ADI/MC AAR

MCP73832T-5ACI/MC AAS

Note: Applies to 8-Lead DFN

8-Lead DFN (2x3x0.9 mm)

Example

KD25

Device Code

MCP73831T-2ACI/OT KDNN

MCP73831T-2ATI/OT KENN

MCP73831T-2DCI/OT KFNN

MCP73831T-3ACI/OT KGNN

MCP73831T-4ADI/OT KHNN

MCP73831T-5ACI/OT KJNN

MCP73832T-2ACI/OT KKNN

MCP73832T-2ATI/OT KLNN

MCP73832T-2DCI/OT KMNN

MCP73832T-3ACI/OT KPNN

MCP73832T-4ADI/OT KQNN

MCP73832T-5ACI/OT KRNN

MCP73832T-2DFI/OT LUNN

Note: Applies to 5-Lead SOT-23

5-Lead SOT-23

XXNN

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanumeric traceability code

Pb-free Compliant JEDEC designator for Matte Tin (Sn)

*This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over

to the next line, thus limiting the number of available characters for customer-specific

information.

MCP73831/2

DS20001984F-page 20  2005-2013 Microchip Technology Inc.

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NOTE 1

EXPOSED PAD

NOTE 1

A3 A1

NOTE 2

BOTTOM VIEW

TOP VIEW

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 2005-2013 Microchip Technology Inc. DS20001984F-page 21

MCP73831/2

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP73831/2

DS20001984F-page 22  2005-2013 Microchip Technology Inc.

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 2005-2013 Microchip Technology Inc. DS20001984F-page 23

MCP73831/2

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP73831/2

DS20001984F-page 24  2005-2013 Microchip Technology Inc.

NOTES:

 2005-2013 Microchip Technology Inc. DS20001984F-page 25

MCP73831/2

APPENDIX A: REVISION HISTORY

Revision F (June 2013)

The following is the list of modifications:

1. Updated the Functional Block Diagram.

2. Added the Battery Detection parameter and

related information in the DC Characteristics

table.

3. Added new section Section 4.2 “Battery

Detection”.

4. Minor grammatical and spelling corrections.

Revision E (September 2008)

The following is the list of modifications:

1. Package Types: Changed DFN pinout dia-

gram.

2. Section 1.0 “Electrical Characteristics”:

Changed “Charge Impedance Range from

20 kΩ to 67 kΩ.

3. Section 1.0 “Electrical Characteristics”:

Misc. Formatting changes.

4. Section 2.0 “Typical Performance Curves”:

Updated Figure 2-4.

5. Section 3.0 “Pin Description”: Added

Exposed Pad pin to table and added

Section 3.6 “Exposed Thermal Pad (EP)”.

6. Updated Appendix A: “Revision History”

7. Added Land Pattern Package Outline Drawing

for 2x3 DFN package.

8. Pagination fixes throughout document per

MarCom Standards.

Revision D (April 2008)

The following is the list of modifications:

1. Changed Charge Termination Current Ratio to

8.5% minimum and 11.5% maximum.

Revision C (October 2007)

The following is the list of modifications:

1. Numerous edits throughout document.

2. Added note to Temperature Specifications

table.

3. Updated Figure 2-4.

Revision B (March 2006)

The following is the list of modifications:

1. Added MCP73832 through document.

Revision A (November 2005)

• Original Release of this Document.

MCP73831/2

DS20001984F-page 26  2005-2013 Microchip Technology Inc.

NOTES:

 2005-2013 Microchip Technology Inc. DS20001984F-page 27

MCP73831/2

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Device: MCP73831: Single-Cell Charge Controller

MCP73831T: Single-Cell Charge Controller

(Tape and Reel)

MCP73832 Single-Cell Charge Controller

MCP73832T: Single-Cell Charge Controller

(Tape and Reel)

Regulation

Voltage:

Code VREG

4.20V

4.35V

4.40V

4.50V

Options: * Code IPREG/IREG VPTH/VREG ITERM/IREG VRTH/VREG

100

66.5

71.5

7.5

96.5

* Consult Factory for Alternative Device Options

Temperature

Range:

I= -40°C to +85°C (Industrial)

Package: MC = Dual-Flat, No-Lead (2x3 mm body), 8-Lead

OT = Small Outline Transistor (SOT23), 5-Lead

Examples: *

a) MCP73831-2ACI/OT: 4.20V VREG

Options AC, 5LD SOT23 Pkg

b) MCP73831T-2ACI/OT: Tape and Reel,

4.20V VREG

, Options AC, 5LD SOT23 Pkg

c) MCP73832-2ACI/MC: 4.20V VREG

Options AC, 8LD DFN Package

d) MCP73832T-2ACI/MC: Tape and Reel,

4.20V VREG

, Options AC, 8LD DFN Package

a) MCP73831-2ATI/OT: 4.20V VREG

Options AT, 5LD SOT23 Pkg

b) MCP73831T-2ATI/OT: Tape and Reel,

4.20V VREG

, Options AT, 5LD SOT23 Pkg

c) MCP73832-2ATI/MC: 4.20V VREG

Options AT, 8LD DFN Package

d) MCP73832T-2ATI/MC: Tape and Reel,

4.20V VREG

, Options AT, 8LD DFN Package

a) MCP73831-2DCI/OT: 4.20V VREG

Options DC, 5LD SOT23 Pkg

b) MCP73831T-2DCI/OT: Tape and Reel,

4.20V VREG

, Options DC, 5LD SOT23 Pkg

c) MCP73832-2DCI/MC: 4.20V VREG

Options DC, 8LD DFN Package

d) MCP73832T-2DCI/MC: Tape and Reel,

4.20V VREG

, Options DC, 8LD DFN Package

a) MCP73831-3ACI/OT: 4.35V VREG

Options AC, 5LD SOT23 Pkg

b) MCP73831T-3ACI/OT: Tape and Reel,

4.35V VREG

, Options AC, 5LD SOT23 Pkg

c) MCP73832-3ACI/MC: 4.35V VREG

Options AC, 8LD DFN Package

d) MCP73832T-3ACI/MC: Tape and Reel,

4.35V VREG

, Options AC, 8LD DFN Package

a) MCP73831-4ADI/OT: 4.40V VREG

Options AD, 5LD SOT23 Pkg

b) MCP73831T-4ADI/OT: Tape and Reel,

4.40V VREG

, Options AD, 5LD SOT23 Pkg

c) MCP73832-4ADI/MC: 4.40V VREG

Options AD, 8LD DFN Package

d) MCP73832T-4ADI/MC: Tape and Reel,

4.40V VREG

, Options AD, 8LD DFN Package

a) MCP73831-5ACI/OT: 4.50V VREG

Options AC, 5LD SOT23 Pkg

b) MCP73831T-5ACI/OT: Tape and Reel,

4.50V VREG

, Options AC, 5LD SOT23 Pkg

c) MCP73832-5ACI/MC: 4.50V VREG

Options AC, 8LD DFN Package

d) MCP73832T-5ACI/MC: Tape and Reel,

4.50V VREG

, Options AC, 8LD DFN Package

* Consult Factory for Alternate Device Options

PART NO.

Device

VREG

/XX

Package

Options

Temperature

Range

MCP73831/2

DS20001984F-page 28  2005-2013 Microchip Technology Inc.

NOTES:

 2005-2013 Microchip Technology Inc. DS20001984F-page 29

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,

PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash

and UNI/O are registered trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MTP, SEEVAL and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Silicon Storage Technology is a registered trademark of

Microchip Technology Inc. in other countries.

Analog-for-the-Digital Age, Application Maestro, BodyCom,

chipKIT, chipKIT logo, CodeGuard, dsPICDEM,

dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial

Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB

Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,

Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA

and Z-Scale are trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

GestIC and ULPP are registered trademarks of Microchip

Technology Germany II GmbH & Co. & KG, a subsidiary of

Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 978-1-62077-260-7

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

QUALITY MANAGEMENT S

YSTEM

CERTIFIED BY DNV

== ISO/TS 16949 ==

DS20001984F-page 30  2005-2013 Microchip Technology Inc.

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11/29/12