Transistors
1
Publication date: March 2003 SJC00101BED
2SC1318A
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0720A
■Features
•High collector-emitter voltage (Base open) VCEO
•Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 80 V
Collector-emitter voltage (Base open) VCEO 70 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC0.5 A
Peak collector current ICP 1A
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 080V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 070V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 150 mA 85 340
hFE2 VCE = 10 V, IC = 500 mA 40
Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.6 V
Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.50 V
Transition frequency fTVCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
2SC1318A
2SJC00101BED
VCE(sat) ICVBE(sat) IChFE IC
PC TaIC VCE IC IB
fT IECob VCB ICBO Ta
0 16040 12080
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
C
(W)
Ambient temperature T
a
(°C)
0108264
0
1.2
1.0
0.8
0.6
0.4
0.2
I
B
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
T
a
= 25°C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0108264
0
1.2
1.0
0.8
0.6
0.4
0.2
VCE = 10 V
Ta = 25°C
Base current IB (mA)
Collector current IC (A)
1 10 100 1 000
0.001
0.01
0.1
1
10 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
1 10 100 1 000
0.01
0.1
1
10
100 I
C
/ I
B
= 10
T
a
= −25°C
25°C
75°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (mA)
1 10 100 1 000
0
300
250
200
150
100
50
VCE = 10 V
Ta = 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC (mA)
−1−10 −100
0
200
160
120
80
40
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
50
40
30
20
10
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0 12080 16040
1
10
10
2
10
3
10
4
V
CB
= 20 V
Ambient temperature Ta (°C)
I
CBO
(T
a
)
I
CBO
(T
a
= 25°C)
2SC1318A
3
SJC00101BED
ICEO Ta
0 80 12040
1
10
102
103
105
104
VCE = 10 V
Ambient temperature Ta (°C)
ICEO (Ta)
ICEO (Ta = 25°C)
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2002 JUL
