2SAR340PT100Q - ROHM SEMICONDUCTOR

2SAR340P

PNP -100mA -400V Middle Power Transistor Datasheet

llOutline

Parameter Value MPT3 　

VCEO -400V

IC-100mA

(SC-62) 　

llFeatures

1) Complementary NPN Types : 2SCR346P.

2) Low VCE(sat)

　　VCE(sat)=-400mV(Max.).

　　(IC/IB=-20mA/-2mA)

llInner circuit

llApplication

LOW FREQUENCY AMPLIFIER

llPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　

Part No. Package Package

size

Taping

code

Reel size

(mm)

Tape width

(mm)

Basic

ordering

unit.(pcs)

Marking

2SAR340P MPT3 4540 T100 180 12 1000 HA

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2SAR340P 　　　　　　　　　　　　　　　　　　　 Datasheet

llAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Values Unit

Collector-base voltage VCBO -400 V

Collector-emitter voltage VCEO -400 V

Emitter-base voltage VEBO -7 V

Collector current

IC-100 mA

ICP*1 -200 mA

Base current IB-30 mA

Power dissipation

PD*2 0.5 W

PD*3 2.0 W

Junction temperature Tj150 ℃

Range of storage temperature Tstg -55 to +150 ℃

llElectrical characteristics (Ta = 25°C)

Parameter Symbol Conditions Values Unit

Min. Typ. Max.

Collector-base breakdown

voltage BVCBO IC = -100μA -400 - - V

Collector-emitter breakdown

voltage BVCEO IC = -1mA -400 - - V

Emitter-base breakdown voltage BVEBO IE = -100μA -7 - - V

Collector cut-off current ICBO VCB = -400V - - -10 μA

Emitter cut-off current IEBO VEB = -6V - - -10 μA

Collector-emitter saturation voltage VCE(sat) IC = -20mA, IB = -2mA - -150 -400 mV

DC current gain hFE VCE = -10V, IC = -10mA 82 - 270 -

Output capacitance Cob

VCB = -10V, IE = 0A,

f = 1MHz - 15 - pF

hFE values are calssified as follows :

rank P Q - - -

hFE 82 - 180 120 - 270 - - -

*1　Pw=10ms Single Pulse

*2　Each terminal mounted on a reference land.

*3　Mounted on a ceramic board.(40×40×0.7mm)

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2SAR340P 　　　 Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded Emitter Propagation

Characteristics

Fig.2 Typical Output Characteristics

Fig.3 DC Current Gain vs. Collector

Current(I)

Fig.4 DC Current Gain vs. Collector

Current(II)

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2SAR340P 　　　 Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.5 Collector-Emitter Saturation Voltage vs.

Collector Current(I)

Fig.6 Collector-Emitter Saturation Voltage vs.

Collector Current(II)

Fig.7 Base-Emitter Saturation Voltage vs.

Collector Current

Fig.8 Gain Bandwidth Product

　　　　vs. Emitter Current

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2SAR340P 　　　 Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.9 Emitter input capacitance vs.

Emitter=Base Voltage

Collector output capacitance vs.

Collector-Base Voltage

Fig.10 Safe Operating Area

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2SAR340P 　　　 Datasheet

llDimensions

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