Features
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120 Watts peak pulse power (tp = 8/20μs)
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DFN1006 (0402) package
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Uni-directional configurations
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Solid-state silicon-avalanche technology
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Low clamping voltage
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Low leakage current
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Low capacitance (Cj=0.45pF typ.)
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Protection one data/power line to:
IEC 61000-4-2 ±20kV contact ±20kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 6A (8/20μs)
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RoHS compliant
Applications
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Audio Line, Speaker, Headset, Microphone Protection
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Human Interface Devices (Keyboard, Touchpad, Buttons)
Parameter Symbol Value
Unit
Peak Pulse Power (TP=8/20μS) PPP W
ESD contact/air discharge (IEC-61000-4-2) VESD 20/20 kV
Peak Pulse Current ( tP = 8/20μS ) IPP 6.0 A
Junction Temperature TJ -55 to +125 °C
Storage temperature TSTG -55 to +150 °C
DFN1006 (0402)
Schematic Diagram
Parameter Symbol Condition Min Typ Max Unit
Reverse stand-off Voltage VRWM 5.0 V
Reverse Breakdown Voltage VBR I
T=1mA 6.0
Reverse Leakage Current IRV
R=5.0V uA
IPP=6.0A
Clamping Voltage (IEC 61000-4-5) VC
Trigger Voltage (IEC 61000-4-2) VTV
ESD=8kV 90 V
Clamping Voltage (IEC 61000-4-2) VCV
ESD=8kV 15 V
Junction Capacitance CJ V
R
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USB2.0,
0.65
USB3.0, Firewire, DVI, HDMI, S-ATA
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Thunderbolt, Display Port
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Mobile HDMI Link, MDDI, MIPI, SWP / NFC
V
1
120
16.5 20 V
=0V, f=1MHz 0.45 pF
GSESLC5VD1006-2U
Low Capacitance ESD Protection Diode
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Electrical Characteristics (TA=25°C unless otherwise specified)
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