IXFL100N50P - Zilog - Pdf.Support

PolarHVTM HiPerFET

Power MOSFET

ISOPLUS264TM

(Electrically Isolated Back Surface)

VDSS = 500 V

ID25 = 70 A

RDS(on) ≤ ≤

≤ ≤

≤ 52 mΩΩ

ΩΩ

Ω

trr ≤ ≤

≤ ≤

≤ 200 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 3 mA 500 V

VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V

IGSS VGS = ±30 VDC, VDS = 0 ±200 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 125°C 2000 µA

RDS(on) VGS = 10 V, ID = IT, Note 1 52 m Ω

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C70A

IDM TC= 25°C, pulse width limited by TJM 250 A

IAR TC= 25°C 100 A

EAR TC= 25°C 100 mJ

EAS TC= 25°C5J

dv/dt IS≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ V

DSS, 20 V/ns

TJ≤ 150°C, RG = 2 Ω

PDTC= 25°C 625 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

VISOL 50/60 Hz, RMS t = 1 min 2500 V~

IISOL ≤ 1 mA t = 1 s 3000 V~

FCMounting force 28..150 / 6.4..30 N/lb

Weight 5g

IXFL 100N50P

S

G

DISOLATEDTAB

ISOPLUS264

G = Gate D = Drain

S = Source

Features

lInternational standard isolated

package

lUL recognized package

lSilicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

lUnclamped Inductive Switching (UIS)

rated

lLow package inductance

- easy to drive and to protect

lFast intrinsic diode

Advantages

lEasy to mount

lSpace savings

lHigh power density

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFL 100N50P

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

gfs VDS = 20 V; ID = IT, Note 1 50 80 S

Ciss 20 nF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF

Crss 140 pF

td(on) 36 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = IT29 ns

td(off) RG= 1 Ω (External) 110 ns

tf26 ns

Qg(on) 240 nC

Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT96 nC

Qgd 78 nC

RthJC 0.20 °C/W

RthCS 0.13 °C/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0 V 100 A

ISM Repetitive 250 A

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr IF = 25A, -di/dt = 100 A/µs 200 ns

QRM VR = 100V 0.6 µC

IRM 6.0 A

Notes:

1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

ISOPLUS264 (IXFL) Outline

Note: Bottom heatsink meets

2500Vrms Isolation to the other pins.

Ref: IXYS CO 0128 R0

Test Current IT = 50 A

IXFL 100N50P

Fig. 1. Output Characteristics

@ 25ºC

0

10

20

30

40

50

60

70

80

90

100

00.511.522.533.544.555.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

220

0 2 4 6 8 10 12 14 16 18 20 22 24 26

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7V

6V

8V

Fig. 3. Output Characteristics

@ 125ºC

0

10

20

30

40

50

60

70

80

90

100

01234567891011

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 4. RDS(on) Normalized to ID = 50A Value

vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 100A

I

D

= 50A

Fig. 5. RDS(on) Normalized to ID = 50A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 20 40 60 80 100 120 140 160 180 200 220

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

80

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

ID - Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFL 100N50P

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

4 4.5 5 5.5 6 6.5 7 7.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

15

30

45

60

75

90

105

120

135

150

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

50

100

150

200

250

300

0.4 0.6 0.8 1 1.2 1.4 1.6

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200 225 250

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 250V

I

D

= 50A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

1

10

100

1,000

10 100 1000

VDS - Volts

ID - Amperes

TJ = 150ºC

TC = 25ºC

25µs

1ms

100µs

RDS(on) Limit

10ms

DC

IXFL 100N50P

Fig. 13. Maximum Transient Thermal Resistance

0.001

0.010

0.100

1.000

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

R

(th)JC

- ºC / W