MOTOROLA Order this document by MAC15A6FP/D SEMICONDUCTOR TECHNICAL DATA MAC15AFP Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 400 thru 800 VOLTS * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Four Modes MT1 MT2 MT2 MT1 CASE 221C-02 STYLE 3 G G MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Symbol Repetitive Peak Off-State Voltage(1) (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) Value VDRM MAC15A6FP MAC15A8FP MAC15A10FP On-State RMS Current (TC = +80C)(2) Full Cycle Sine Wave 50 to 60 Hz (TC = +95C ) Unit Volts 400 600 800 IT(RMS 15 12 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T C = +80C) preceded and followed by rated current ITSM 150 Amps Peak Gate Power (T C = +80C, Pulse Width = 2 s) PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps Average Gate Power (T C = +80C, t = 8.3 ms) Peak Gate Current Peak Gate Voltage RMS Isolation Voltage (TA = 25C, Relative Humidity Operating Junction Temperature Storage Temperature Range p 20%) VGM 10 Volts V(ISO 1500 Volts TJ -40 to +125 C Tstg -40 to +150 C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1999 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RJC 2 C/W Thermal Resistance, Case to Sink RCS 2.2 (typ) C/W Thermal Resistance, Junction to Ambient RJA 60 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit IDRM -- -- -- -- 10 2 A mA VTM -- 1.3 1.6 Volts Peak Blocking Current (Either Direction) TJ = 25C (VD = Rated VDRM, TJ = 125C, Gate Open) Peak On-State Voltage (Either Direction) (ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) (Main Terminal Voltage = Rated VDRM, RL = 10 k, TJ = +110C) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-); MT2(-), G(+) VGT mA -- -- -- -- -- -- -- -- 50 50 50 75 Volts -- -- -- -- 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 -- -- -- -- Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH -- 6 40 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) t gt -- 1.5 -- s dv/dt(c) -- 5 -- V/s Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80C) Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. QUADRANT DEFINITIONS 2. Simplified circuitry. MT2(+) QUADRANT II QUADRANT I MT2(+), G(-) MT2(+), G(+) G(-) G(+) QUADRANT III QUADRANT IV MT2(-), G(-) MT2(-), G(+) MT2(-) 3. Fast turn-on time for cooler, more efficient and reliable operation. ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES Usage General Part Number MBS4991 MBS4992 VS 6-10 V 7.5-9 V IS VS1-VS2 350 A Max 120 A Max 0.5 V Max 0.2 V Max Temperature Coefficient 0.02%/C Typ 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. 2 Motorola Thyristor Device Data 30 120 60 90 110 125C 150 to 180 100 90 = CONDUCTION ANGLE 80 0 PD(AV), AVERAGE POWER DISSIPATION (WATTS) dc 2 4 6 8 10 12 14 16 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 1 0.7 0.5 0.3 -60 -40 -20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (C) Figure 1. RMS Current Derating Figure 4. Typical Gate Trigger Current 140 100 20 = 180 TJ = 125C 70 120 16 dc 125C 30 30 = CONDUCTION ANGLE 20 4 0 2 TJ = 25C 60 8 50 90 12 0 4 6 8 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 2. On-State Power Dissipation VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 3 IT(RMS), RMS ON-STATE CURRENT (AMP) 3 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 i F, INSTANTANEOUS FORWARD CURRENT (AMP) TC, CASE TEMPERATURE (C) 130 IGTM , GATE TRIGGER CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 10 7 5 3 2 1 0.7 0.5 1 0.3 0.7 0.2 0.5 0.3 -60 -40 -20 0 20 40 60 80 100 120 140 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 TJ, JUNCTION TEMPERATURE (C) vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Typical Gate Trigger Voltage Figure 5. Maximum On-State Characteristics Motorola Thyristor Device Data 4.4 3 300 GATE OPEN APPLIES TO EITHER DIRECTION 2 I TSM, PEAK SURGE CURRENT (AMP) I H, HOLDING CURRENT (NORMALIZED) 3 1 0.7 0.5 0.3 -60 -40 -20 0 20 40 60 80 100 200 100 70 50 TC = 80C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 30 120 140 1 2 3 5 7 10 TJ, JUNCTION TEMPERATURE (C) NUMBER OF CYCLES Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 ZJC(t) = r(t) * RJC 0.2 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Figure 8. Thermal Response 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS -T- -B- F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. SEATING PLANE C S P N E A Q H STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE 1 2 3 -Y- K Z J L G R D 3 PL 0.25 (0.010) M B M DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 Y CASE 221C-02 ISSUE B Motorola Thyristor Device Data 5 NOTES 6 Motorola Thyristor Device Data Motorola reserves the right to make changes without further notice to any products herein. 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