1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•Gate Triggering Guaranteed in Four Modes
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine W ave 50 to 60 Hz, Gate Open) MAC15A6FP
MAC15A8FP
MAC15A10FP
VDRM
400
600
800
Volts
On-State RMS Current (TC = +80°C)(2)
Full Cycle Sine W ave 50 to 60 Hz (T C = +95°C ) IT(RMS 15
12 Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C)
preceded and followed by rated current ITSM 150 Amps
Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts
Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt
Peak Gate Current IGM 2Amps
Peak Gate Voltage VGM 10 Volts
RMS Isolation Voltage (TA = 25°C, Relative Humidity
p
20%) V (ISO 1500 Volts
Operating Junction Temperature TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Order this document
by MAC15A6FP/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
MT1
G
MT2
MAC15AFP
Series
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
15 AMPERES RMS
400 thru 800 VOLTS
MT1
MT2
G
2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2°C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current (Either Direction) TJ = 25°C
(VD = Rated VDRM, TJ = 125°C, Gate Open) IDRM —
——
—10
2µA
mA
Peak On-State Voltage (Either Direction)
(ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
p
2%) VTM —1.3 1.6 Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
—
—
—
—
—
—
—
—
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–);
MT2(–), G(+)
VGT
—
—
—
—
0.2
0.2
0.9
0.9
1.1
1.4
—
—
2
2
2
2.5
—
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
IH— 6 40 mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise T ime = 0.1 µs, Pulse Width = 2 µs)
tgt —1.5 — µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) — 5 — V/µs
MT2(+)
QUADRANT II QUADRANT I
QUADRANT III QUADRANT IV
MT2(–)
G(–) G(+)
MT2(+), G(–) MT2(+), G(+)
MT2(–), G(–) MT2(–), G(+)
T rigger devices are recommended for gating on T riacs. They provide:
1. Consistent predictable turn–on points.
2. Simplified circuitry.
3. Fast turn–on time for cooler, more efficient and reliable operation.
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
QUADRANT DEFINITIONS
Part Number
Usage General
MBS4992MBS4991
VS
IS
VS1–VS2
Temperature
Coefficient
6–10 V 7.5–9 V
350 µA Max 120 µA Max
0.5 V Max 0.2 V Max
0.02%/°C T yp
1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
3
Motorola Thyristor Device Data
TYPICAL CHARACTERISTICS
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
Figure 5. Maximum On–State Characteristics
130
120
110
100
90
80 0246810121416
I
T(RMS), RMS ON–STATE CURRENT (AMP)
TC, CASE TEMPERATURE ( C)
°
30
°
125
°
C
60
°
90
°
dc
20
16
12
8
4
00246810121416
I
T(RMS), RMS ON–STATE CURRENT (AMP)
30
°
α
= 180
°
dc
TJ = 125
°
C
60
°
90
°
120
°
3
2
1
0.7
0.3
–60 –40 –20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (
°
C)
0.5
120 140
OFF–STATE VOLTAGE = 12 Vdc
ALL MODES
VGTM, GATE TRIGGER VOLTAGE (NORMALIZED)
3
2
1
0.7
0.5
0.3
–60 –40 –20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (
°
C) 120 140
OFF–STATE VOLTAGE = 12 Vdc
ALL MODES
IGTM, GATE TRIGGER CURRENT (NORMALIZED)
100
70
50
30
20
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
vT, INSTANTANEOUS ON–STATE VOLT AGE (VOLTS)
TJ = 25
°
C
4 4.4
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
125
°
C
150
°
to 180
°
P , AVERAGE POWER DISSIPATION (WATTS)
D(AV)
i , INSTANTANEOUS FORWARD CURRENT (AMP)
F
α
= CONDUCTION ANGLE
α
α
α
= CONDUCTION ANGLE
α
α
4 Motorola Thyristor Device Data
Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current
Figure 8. Thermal Response
3
2
1
0.7
0.5
0.3
–60 –40 –20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (
°
C) 120 140
GATE OPEN
APPLIES TO EITHER DIRECTION
IH, HOLDING CURRENT (NORMALIZED)
300
200
100
70
50
301235
NUMBER OF CYCLES 710
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
TC = 80
°
C
f = 60 Hz
ITSM, PEAK SURGE CURRENT (AMP)
1
0.5
0.1
0.05
0.02
0.01
0.1 0.2 0.5 t, TIME (ms)
1
Z
θ
JC(t) = r(t)
•
R
θ
JC
0.2
2 5 10 20 50 100 200 500 1 k 2 k 5 k 10 k
r(t) TRANSIENT THERMAL RESIST ANCE
(NORMALIZED)
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221C-02
ISSUE B
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
–Y–
–B– –T–
Q
P
A
K
H
Z
GL
F
D3 PL
M
B
M
0.25 (0.010) Y
E
NS
J
R
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.680 0.700 17.28 17.78
B0.388 0.408 9.86 10.36
C0.175 0.195 4.45 4.95
D0.025 0.040 0.64 1.01
E0.340 0.355 8.64 9.01
F0.140 0.150 3.56 3.81
G0.100 BSC 2.54 BSC
H0.110 0.155 2.80 3.93
J0.018 0.028 0.46 0.71
K0.500 0.550 12.70 13.97
L0.045 0.070 1.15 1.77
N0.049 ––– 1.25 –––
P0.270 0.290 6.86 7.36
Q0.480 0.500 12.20 12.70
R0.090 0.120 2.29 3.04
S0.105 0.115 2.67 2.92
Z0.070 0.090 1.78 2.28
6 Motorola Thyristor Device Data
NOTES
7
Motorola Thyristor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer.
8 Motorola Thyristor Device Data
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MAC15A6FP/D
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