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TOSHIBA GTR Module Silicon N Channel IGBT
MG400J1US51
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance
l Includes a complete half bridge in one package.
l Enhancement-mode
l High speed : tf = 0.30µs (Max.) (IC = 400A)
t
rr = 0.15µs (Max.) (IF = 400A)
l Low saturation voltage
: VCE (sat) = 2.70V (Max.) (IC=400A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
DC IC 400
Collector current
1ms ICP 800
A
DC IF 400
Forward current
1ms IFM 800
A
Collector power dissipation (Tc = 25°C) PC 1500 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −40 ~ 125 °C
Isolation voltage VIsol 2500
(AC 1 min.) V
Screw torque (Terminal / M4 / M6 / mounting) ― 2 / 3 / 3 N·m
JEDEC ―
EIAJ ―
TOSHIBA 2-109A4A
Weight: 465g (Typ.)
Unit: mm
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
r
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGES VGE = ±20V, VCE = 0 ― ― ±500 nA
Collector cut-off current ICES VCE = 600V, VGE = 0 ― ― 4.0 mA
Gate-emitter cut-off voltage VGE (off) IC = 40mA, VCE = 5V 5.0 7.0 8.0 V
Collector-emitter saturation voltage VCE (sat) IC = 400A, VGE = 15V ― 2.10 2.70 V
Input capacitance Cies VCE = 10V, VGE = 0, f = 1MHz ― 36000 ― pF
Turn-on delay time td (on) ― 0.20 0.40
Rise time tr ― 0.15 0.30
Turn-on time ton ― 0.60 1.20
Turn-off delay time td (off) ― 0.20 0.40
Fall time tf ― 0.15 0.30
Switching time
Turn-off time toff
Inductive load
V
CC = 300V
I
C = 400A
V
GE = ±15V
R
G = 2Ω
(Note 1)
― 0.50 1.00
µs
Forward voltage VF IF = 400 A, VGE = 0 ― 2.30 3.00 V
Reverse recovery time trr IF = 400 A, VGE = −10 V,
di / dt = 400 A / µs ― 0.08 0.15 µs
Transistor stage ― ― 0.083
Thermal resistance Rth (j-c)
Diode stage ― ― 0.20
°C / W
Note 1: Switching time test circuit & timing chart
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
r
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
y
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
t
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
y
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
r
others.
· The information contained herein is subject to change without notice.
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