1N5913B~1N5940B
VZnom1) IZT for r
zjT rzjK at I
ZK IR at VR
Type V mA Ω Ω mA μA V
1N5913B 3.3 113.6 <10 <500 1 <50 1
1N5914B 3.6 104.2 <9 <500 1 <35.5 1
1N5915B 3.9 96.1 <7.5 <500 1 <12.5 1
1N5916B 4.3 87.2 <6 <500 1 <2.5 1
1N5917B 4.7 79.8 <5 <500 1 <2.5 1.5
1N5918B 5.1 73.5 <4 <350 1 <2.5 2
1N5919B 5.6 66.9 <2 <250 1 <2.5 3
1N5920B 6.2 60.5 <2 <200 1 <2.5 4
1N5921B 6.8 55.1 <2.5 <200 1 <2.5 5.2
1N5922B 7.5 50 <3 <400 0. 5 <2.5 6
1N5923B 8.2 45.7 <3.5 <400 0. 5 <2.5 6.5
1N5924B 9.1 41.2 <4 <500 0. 5 <2.5 7
1N5925B 10 37.5 <4.5 <500 0.25 <2.5 8
1N5926B 11 34,1 <5.5 <550 0.25 <0.5 8.4
1N5927B 12 31.2 <6.5 <550 0.25 <0.5 9.1
1N5928B 13 28.8 <7 <550 0.25 <0.5 9.9
1N5929B 15 25 <9 <600 0.25 <0.5 11.4
1N5930B 16 23.4 <10 <600 0.25 <0.5 12.2
1N5931B 18 20.8 <12 <650 0.25 <0.5 13.7
1N5932B 20 18.7 <14 <650 0.25 <0.5 15.2
1N5933B 22 17 <17.5 <650 0.25 <0.5 16.7
1N5934B 24 15.6 <19 <700 0.25 <0.5 18.2
1N5935B 27 13.9 <23 <700 0.25 <0.5 20.6
1N5936B 30 12.5 <26 <750 0.25 <0.5 22.8
1N5937B 33 11.4 <33 <800 0.25 <0.5 25.1
1N5938B 36 10.4 <38 <850 0.25 <0.5 27.4
1N5939B 39 9.6 <45 <900 0.25 <0.5 29.7
1N5940B 43 8.7 <53 <950 0.25 <0.5 32.7
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL)at 30℃,
9.5mm(3/8”) from the diode body.
Excel Semiconductor
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