2000-05-17
1
BTS 247 Z
Speed TEMPFET
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Avalanche rated
VPT05166
15
Type VDS RDS(on) Package Ordering Code
BTS 247 Z 55 V 18 m
P-TO220-5-3 Q67060-S6001-A2
P-TO220-5-62 Q67060-S6002-A2
TO-220-5-43 Q67060-S6006
Temperature
Sensor
G Pin 1
A Pin 2
D Pin 3 and TAB
K Pin 4
S Pin 5
Pin Symbol Function
1 G Gate
2 A Anode Temperature Sensor
3 D Drain
4 K Cathode Temperature Sensor
5 S Source
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BTS 247 Z
Maximum Ratings
Parameter Symbol Value Unit
Drain source voltage VDS 55 V
Drain-gate voltage, RGS = 20 k
VDGR 55
Gate source voltage VGS
20
Nominal load current (ISO 10483)
VGS = 4.5 V, VDS
0.5 V, TC = 85 °C
VGS = 10 V, VDS
0.5 V, TC = 85 °C
ID(ISO)
12
19
A
Continuous drain current 1)
TC = 100 °C, VGS = 4.5V
ID33
Pulsed drain current ID
p
uls 180
Avalanche energy, single pulse
ID = 12 A, RGS = 25
EAS 1.3 J
Power dissipation
TC = 25 °C
Ptot 120 W
Operating temperature 2) T
j
-40 ...+175 °C
Peak temperature ( single event ) T
jp
eak 200
Storage temperature Tst
g
-55 ... +150
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
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BTS 247 Z
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
junction - case: RthJC - - 1.25 K/W
Thermal resistance @ min. footprint Rth
(
JA
)
- - 62
Thermal resistance @ 6 cm2 cooling area 1) Rth
(
JA
)
- 33 40
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
V(BR)DSS 55 - - V
Gate threshold voltage, VGS = VDS
ID = 90 µA
ID = 250 µA
VGS(th)
1.2
-
1.6
1.65
2
-
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
0.1
-
0.1
1
100
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V, Tj = 25 °C
VGS = 20 V, VDS = 0 V, Tj = 150 °C
IGSS
-
-
10
20
100
100
nA
Drain-Source on-state resistance
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 12 A
RDS(on)
-
-
22
15
28
18
m
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
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BTS 247 Z
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Forward transconductance
VDS>2*ID*RDS(on)max , ID = 33 A
gfs 10 - - S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 1380 1730 pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 410 515
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 230 290
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 45 A,
RG = 3.6
td(on) - 15 25 ns
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 45 A,
RG = 3.6
tr- 30 45
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 45 A,
RG = 3.6
td(off) - 30 45
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 45 A,
RG = 3.6
tf- 20 30
Gate Charge Characteristics
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V
Qg(th) - 2 3 nC
Gate charge at 5.0 V
VDD = 40 V, ID = 45 A, VGS = 0 to 5 V
Qg(5) - 35 55
Gate charge total
VDD = 40 V, ID = 45 A, VGS = 0 to 10 V
Qg(total) - 60 90
Gate plateau voltage
VDD = 40 V, ID = 45 A
V(plateau) - 4.5 - V
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BTS 247 Z
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS33 - - A
Inverse diode direct current,pulsed
TC = 25 °C
IFM 180 - -
Inverse diode forward voltage
VGS = 0 V, IF = 90 A
VSD - 1.1 1.7 V
Reverse recovery time
VR = 30 V, IF=IS, diF/dt = 100 A/µs
trr - 75 115 ns
Reverse recovery charge
VR = 30 V, IF=IS, diF/dt = 100 A/µs
Qrr - 0.15 0.25 µC
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
Forward voltage
IAK(on) = 5 mA, Tj = -40...+150 °C
IAK(on) = 1.5 mA, Tj = 150 °C
VAK(on)
-
-
1.3
-
1.4
0.9
V
Sensor override
tP = 100 µs, Tj = -40...+150 °C
- - 10
Forward current
Tj = -40...+150 °C
IAK(on) - - 5 mA
Sensor override
tP = 100 µs, Tj = -40...+150 °C
- - 600
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BTS 247 Z
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Sensor Characteristics
Temperature sensor leakage current
Tj = 150 °C
IAK(off) - - 4 µA
Min. reset pulse duration 1)
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK
(
Reset
)
<0.5V
treset 100 - - µs
VAK Recovery time1)2)
Tj = -40...+150 °C, IAK(on) = 0.3 mA
trecovery - - 150
Characteristics
Holding current, VAK(off) = 5V
Tj = 25 °C
Tj = 150 °C
IAK(hold)
0.05
0.05
-
-
0.5
0.3
mA
Thermal trip temperature
VTS = 5V
TTS(on) 150 160 170 °C
Turn-off time (Pin G+A and K+S connected)
VTS = 5V, ITS(on) = 2 mA
toff 0.5 - 2.5 µs
Reset voltage
Tj = -40...+150°C
VAK(reset) 0.5 - - V
Sensor recovery behaviour:
VAK
[V ]
treset
trecovery
5
4
0
ON Reset OFFSensor
Sensor RESET
1See diagram Sensor recovery behaviour
2Time after reset pulse until VAK reaches 4V again
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BTS 247 Z
2 Drain current
ID = f(TC); VGS
4.5V
0 20 40 60 80 100 120 140 °C 180
TC
0
5
10
15
20
25
30
A
40
I
D
1 Maximum allowable power dissipation
Ptot = f(TC)
-40 0 40 80 120 °C 180
TC
0
10
20
30
40
50
60
70
80
90
100
110
W
130
P
tot
3 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3
s
tp
-1
10
0
10
1
10
2
10
K/W
ZthJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
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BTS 247 Z
5 Safe operating area
ID=f(VDS); D=0.01; TC=25°C; VGS=4.5V
10 0 10 1 10 2
V
VDS
0
10
1
10
2
10
3
10
A
I
D
tp=10µs
DC
100ms
10ms
1ms
Rdson=Vds/Id
100µs
6 Typ. output characteristic
ID = f(VDS); Tj=25°C
Parameter: VGS
0 1 2 V4
VDS
0
20
40
60
80
A
120
I
D
3V
3.5V
4V
4.5V
5V
6V
7V
10V
7 On-state resistance
RON = f(Tj); ID=12A; VGS = 4.5V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
5
10
15
20
25
30
35
40
45
50
m
60
RDS(on)
typ.
max
8 On-state resistance
RON = f(Tj); ID=12A; VGS = 10V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
5
10
15
20
25
30
m
40
RDS(on)
typ.
max
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BTS 247 Z
9 Typ. transfer characteristics
ID = f(VGS); VDS = 12V; Tj = 25°C
0 1 2 3 V5
VGS
0
10
20
30
40
50
A
70
I
D
10 Typ. input threshold voltage
VGS(th) = f(Tj); VDS=VGS
Parameter: ID
-50 -25 0 25 50 75 100 125 °C 175
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
2.4
V
GS(th)
90µA
0.9mA
9mA
90mA
11 Typ. capacitances
C = f(VDS); VGS=0 V, f=1 MHz
0 4 8 12 16 20 24 28 32 V40
VDS
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
12 Typ. forward charcteristics of
reverse diode IF = f(VSD)
tp = 80µs (spread); Parameter: T
j
0.0 0.2 0.4 0.6 0.8 1.0 V1.4
VSD
-1
10
0
10
1
10
2
10
A
IF
25°C
150°C
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BTS 247 Z
13 Typ. gate charge
VGS = f(QGate); ID puls = 45 A
0 10 20 30 40 50 60 70 80 nC 100
QGate
0
2
4
6
8
10
12
V
16
BTS 247 Z
V
GS
0,8 VDS max
DS max
V
0,2
14 Drain-source break down voltage
V(BR)DSS = f(Tj)
-40 0 40 80 120 °C 180
Tj
50
52
54
56
58
60
62
V
66
V(BR)DSS
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BTS 247 Z
Package Ordering Code
P-TO220-5-3 Q67060-S6001-A2
Package Ordering Code
P-TO220-5-62 Q67060-S6002-A2
3.7
9.5
9.9
15.6
2.8
12.8
0.5
2.4
9.2
1.3
4.4
0.8
1.7
15˚
9.75
4.5
8.2
GPT05165
4x1.7=6.8
5.6
1)
1) shear and punch direction no burrs this surface
2) min. length by tinning
5
3)
2)
3) max. 11 mm allowable by tinning
1)
6.8=1.7x4
1.7
0.8
GPT05166
shear and punch direction no burrs this surface
1.5 10.5
8
9.9 0.2
4.4
1.3
2.4
1.5 9.2
3.6
1)
0.5
0.2 M
Package Ordering Code
TO-220-5-43 Q67060-S6006
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BTS 247 Z
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
