Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 2601 N 85 ... 90 T N Vorlaufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tvj = -40C ... tvj max f = 50Hz VRRM 8500 V 9000 V Durchlastrom-Grenzeffektivwert RMS forward current tC = 60C, f = 50Hz IFRMSM 4850 A Dauergrenzstrom mean forward current tC = 85C, f = 50Hz tC = 60C, f = 50Hz IFAVM 2600 A 3070 A Stostrom-Grenzwert surge forward current tvj = 25C, tp = 10ms tvj = tvj max, tp = 10ms IFSM Grenzlastintegral 2 I t-value tvj = 25C, tp = 10ms tvj = tvj max, tp = 10ms It Durchlaspannung forward voltage tvj = tvj max, iF = 4000 A vF Schleusenspannung threshold voltage tvj = tvj max V(TO) Ersatzwiderstand forward slope resistance tvj = tvj max rT 52 kA 50 kA 2 6 2 13,5-10 A s 6 2 12,5-10 A s Charakteristische Werte / Characteristic values Durchlarechenkennlinie On-state characteristics for calculation 500 A iF 5000 A tvj = tvj max A B C D VF = A + B i F + C ln(i F + 1)+ D iF Sperrstrom reverse current PM BIP / 2000-01-13 Keller tvj = tvj max, vR = VRRM iR max 2,6 V 1 V 0,4 m max. -0,0971 0,000315 0,157 0,0021 100 mA Seite/page 1 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 2601 N 85 ... 90 T N Vorlaufige Daten Preliminary Data Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink RthJC beidseitig / two-sided, DC Anode / anode, DC Kathode /cathode, DC Kuhlflache / cooling surface beidseitig / two-sided einseitig / single sided max max max 0,0075 C/W 0,0141 C/W 0,0160 C/W max max 0,006 C/W 0,012 C/W RthCK Hochstzulassige Sperrschichttemperatur max. junction temperature tvj max 160 C Betriebstemperatur operating temperature tc op -40...+160 C Lagertemperatur storage temperature tstg -40...+160 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Seite 3 Si - Element mit Druckkontakt Si - pellet with pressure contact 76DN90 Anprekraft clamping force F Gewicht weight G 36...52 kN typ 1200 g Kriechstrecke creepage distance 30 mm Luftstrecke air distance 20 mm Feuchteklasse humidity classification DIN 40040 Schwingfestigkeit vibration resistance f = 50Hz C 2 50 m/s Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehorigen technischen Erlauterungen. This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. PM BIP / 2000-01-13 Keller Seite/page 2 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 2601 N 85 ... 90 T N Vorlaufige Daten Preliminary Data Outline Drawing PM BIP / 2000-01-13 Keller Seite/page 3 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 2601 N 85 ... 90 T N Vorlaufige Daten Preliminary Data On-State Characteristics ( v F ) upper limit of scatter range 6000 5000 I F (A) 4000 max 3000 2000 1000 0 0 1 2 3 VF [V] PM BIP / 2000-01-13 Keller Seite/page 4 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 2601 N 85 ... 90 T N Vorlaufige Daten Preliminary Data Transient thermal Impedance for constant-current doppelseitige Kuhlung r [K/W] [s] 1 0,0015 1,38 2 0,0023 0,185 3 0,0022 0,07 4 0,001 0,01 5 0,0005 0,0018 0,0075 - anodenseitige Kuhlung r [K/W] [s] 0,0081 9,8 0,0023 0,185 0,0022 0,07 0,001 0,01 0,0005 0,0018 0,0141 - kathodenseitige Kuhlung r [K/W] [s] 0,01 10,2 0,0023 0,185 0,0022 0,07 0,001 0,01 0,0005 0,0018 0,016 - ZthJC = n=1 Rthn (1 - e - t /n ) nmax PM BIP / 2000-01-13 Keller Seite/page 5 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 2601 N 85 ... 90 T N Vorlaufige Daten Preliminary Data Surge Current Characteristics I FSM = f ( tp ) It value i2 dt = f ( tp ) 1,E+08 1,E+05 1,E+07 ----- _____ IFSM / [A] 1,E+06 idt / [As] Sine half-wave, t vj =160 C , v R = 0 1,E+04 0,1 1 10 1,E+06 100 Time / [ms] PM BIP / 2000-01-13 Keller Seite/page 6 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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