HSB88AS-E - Renesas Electronics

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regar ding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

license under any intellectual property rights, or any other rights, belonging to Renesas Technology

Corporation or a third party.

2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any

third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are

subject to change by Renesas Technology Corporation without notice due to product improvements or

other reasons. It is therefore recommended that customers contact Renesas Technology Corporation

or an authorized Renesas Technology Corporation product distributor for the latest product information

before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss

rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corporation by various

means, including the Renesas Technology Corporation Semiconductor home page

(http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before

making a final decision on the applicability of the information and products. Renesas Technology

Corpo r ation assumes no respon sibility for any damage, liability or other loss resulting from the

information contained herein.

5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device

or system that is used under circumstances in which human life is potentially at stake. Please contact

Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor

when considering the use of a product contained herein for any specific purposes, such as apparatus or

systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in

whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other

than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the

country of destination is prohibited.

8. Please contact Renesas Technology Corporation for further details on these materials or the products

contained therein.

HSB88AS

Silicon Schottky Barrier Diode for High Speed Switching

ADE-208-964 (Z)

Rev. 0

Aug. 2000

Features

• Low reverse current, Low capacitance.

• CMPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSB88AS C1 CMPAK

Pin Arrangement

1 Cathode 2

2 Anode 1

3 Cathode 1

Anode 2

(Top View)

HSB88AS

Rev.0, Aug. 2000, page 2 of 5

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Value Unit

Reverse voltage VR 10 V

Average rectified current IO * 15 mA

Junction temperature Tj 125 °C

Storage temperature Tstg −55 to +125 °C

Note: Per one device.

Electrical Characteristics *1

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage VF1 0.350  0.420 V IF = 1 mA

F2 0.500  0.580 IF = 10 mA

Reverse current IR1   0.2 µA VR = 2 V

R2   10 VR = 10 V

Capacitance C   0.80 pF VR = 0 V, f = 1 MHz

Capacitance deviation ∆C   0.10 pF VR = 0 V, f = 1 MHz

Forward voltage deviation ∆VF   10 mV IF = 10 mA

ESD-Capabilityme *2  30   V C = 200 pF, R = 0 Ω, Both forward and

reverse direction 1 pulse.

Notes: 1. Per one device.

2. Failure criterion ; IR > 0.4 µA at VR = 2V

HSB88AS

Rev.0, Aug. 2000, page 3 of 5

Main Characteristic

Reverse voltage V R (V)

Reverse current I R (A)

Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage

Capacitance C (pF)

Fig.3 Capacitance Vs. Reverse voltage

Reverse voltage V R (V)

Forward voltage V (V)

Forward current I (A)

00.1 0.2 0.3 0.4 0.5

-5

-6

-3

-4

-2

0.6

Ta=25°C

Ta=75°C

0.1 1.0

1.0

0.1

f=1MHz

-9

-8

-7

10 15

-6

-5

Ta=25°C

Ta=75°C

HSB88AS

Rev.0, Aug. 2000, page 4 of 5

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

CMPAK



Conforms

0.006 g

Unit: mm

2.0 ± 0.2

0.3

2.1 ± 0.3

(0.425)

1.25 ± 0.1

(0.425)

(0.65) (0.65)

1.3 ± 0.2

0.16

0 − 0.1

0.2

0.9 ± 0.1

+ 0.1

− 0.05

0.3

+ 0.1

− 0.05

0.3

+ 0.1

− 0.05

+ 0.1

− 0.06

HSB88AS

Rev.0, Aug. 2000, page 5 of 5

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00

Singapore 049318

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road

Hung-Kuo Building

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower

World Finance Centre,

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://semiconductor.hitachi.com.hk

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.

Electronic Components Group

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585200

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 4.0