VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.1 m Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Jan. 02 * Patented free-floating silicon technology * Low on-state and switching losses * Designed for traction, energy and industrial applications * Optimum power handling capability * Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol Conditions 5STP 33L2800 5STP 33L2600 5STP 33L2200 VDRM, VRRM f = 50 Hz, tp = 10ms 2800 V 2600 V 2200 V VRSM1 tp = 5ms, single pulse 3000 V 2800 V 2400 V dV/dtcrit Exp. to 0.67 x VDRM, Tj = 125C 1000 V/s Characteristic values Parameter Symbol Conditions min typ max Unit Forwarde leakage current IDRM VDRM, Tj = 125C 400 mA Reverse leakage current IRRM VRRM, Tj = 125C 400 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 63 typ 70 max Unit 84 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Surface creepage distance DS 36 mm Air strike distance Da 15 mm 1) min typ 1.45 Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit kg 5STP 33L2800 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current ITAVM RMS on-state current ITRMS Max. peak non-repetitive surge current ITSM Limiting load integral I2t Max. peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70C tp = 10 ms, Tj = 125C, VD=VR = 0 V tp = 8.3 ms, Tj = 125C, VD=VR=0 V max Unit 3740 A 5880 A 60000 A 18000 kA2s 65000 A 17500 kA2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 3000 A, Tj= 125C 1.23 V Threshold voltage VT0 IT = 2000 A - 6000 A, Tj= 125C 0.95 V Slope resistance rT Tj = 125C 0.1 m Holding current IH Tj = 25C 100 mA Tj = 125C 60 mA Tj = 25C 500 mA Tj = 125C 300 mA Latching current Switching Maximum rated values IL min typ max Unit 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min typ Cont. Tj = 125C, ITRM = 4500 A, f = 50 Hz VD 0.67VDRM, Cont. IFG = 2 A, tr = 0.5 s f = 1Hz Tj = 125C, ITRM = 4500 A, VR = 200 V, diT/dt = -5 A/s, VD 0.67VDRM, dvD/dt = 20 V/s, max Unit 250 A/s 1000 A/s 400 s Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tj = 125C, ITRM = 4500 A, VR = 200 V, diT/dt = -5 A/s Delay time td VD = 0.4VDRM, IFG = 2 A, tr = 0.5 s min typ 2000 max Unit 4000 As 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan. 02 page 2 of 6 5STP 33L2800 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Gate power loss PG 3 W Average gate power loss PGAV For DC gate current max Unit see Fig. 9 Characteristic values Parameter Symbol Conditions Gate trigger voltage VGT Tj = 25C 2.6 V Gate trigger current IGT Tj = 25C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125C 10 mA Thermal Maximum rated values min typ max Unit 1) Parameter Symbol Conditions Operating junction temperature range Tj min Storage temperature range Tstg typ -40 max Unit 125 C 140 C Characteristic values Parameter Symbol Conditions max Unit Double side cooled 7 K/kW Rth(j-c)A Anode side cooled 14 K/kW Rth(j-c)C Cathode side cooled 14 K/kW Double side cooled 1.5 K/kW Single side cooled 3 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i 1 2 3 4 Ri(K/kW) 4.7 0.853 1.07 0.49 i(s) 0.4787 0.0824 0.0104 0.0041 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan. 02 page 3 of 6 5STP 33L2800 On-state characteristic model: VT = A + B iT + C ln(iT +1) + D IT Valid for iT = 400 - 11000 A A B C D 7.3117e-1 7.9000e-5 1.7903e-2 2.3140e-3 Fig. 2 On-state characteristics. Tj=125C, 10ms half sine Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 3 On-state characteristics. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan. 02 page 4 of 6 5STP 33L2800 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. 2..5 A 1.5 IGT 2 A/s 1 s 5...20s diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommendet gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Jan. 02 page 5 of 6 5STP 33L2800 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1011-03 Jan. 02