SKKT 92, SKKH 92, SKKT 92B THYRISTOR (R) SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / 655 4"55 4#55 4>55 / 755 4$55 4=55 4!55 .::+ 6$;57 .::+ 6$;4$ .::+ 6$;4= .::+ 6$;4! 4655 4755 .::+ 6$;47 SKKH 92 Values Units 4758 + 3 7# (455) 9&8 -";4758 + 3 =# 9&8 <$ ; <! -";475?8 + 3 "# 9&8 <$ ; <! 6# (!7 ) >5 ; 7# 4=5 ;4># * * * 201. -";475?8 + 3 "# 9&8 @4 ; @" 465 ; " A 4"# * 2+.1 +, 3 $# 9&8 45 +, 3 4$# 9&8 45 +, 3 $# 9&8 7" 45 $555 4>#5 $5555 * * *B + Features !" #"$ Typical Applications %& 1) ( ) *& + ( , ) - ( ) . SKKT 1 .:: 6$;47 Conditions /+ /+(+C) SKKT 92B .::+ 6$<47 Symbol +, 3 4$# 9&8 7" 45 SKKT 92 2+*/ 3 6# * ( 4758 + 3 7# 9&) .::+ 6$<57 .:: 6$;57 .::+ 6$<4$ .:: 6$;4$ .::+ 6$<4= .:: 6$;4= .::+ 6$<4! .:: 6$;4! 2+*/ 2% B 2+01. 3 4#5 * ( , ) +, 3 $# 9&8 2+ 3 "55 * +, 3 4$# 9& +, 3 4$# 9& 4#555 *B 4!# 56 $ / / D $5 * 4 F 2%%8 20% +, 3 4$# 9&8 /0% 3 /0018 /%% 3 /%01 +, 3 $# 9&8 2E 3 4 *8 E; 3 4 *;F /% 3 5!> A /%01 $ F (;) (,;) G 2 +, 3 4$# 9& +, 3 4$# 9& +, 3 4$# 9& +, 3 $# 9&8 ; 4#5 4555 455 4#5 ; $#5 *;F /;F F * 2 +, 3 $# 9&8 0E 3 "" D8 ; "55 ; !55 * /E+ 2E+ /E% +, 3 $# 9&8 +, 3 $# 9&8 +, 3 4$# 9&8 " 4#5 5$# / * / 2E% +, 3 4$# 9&8 0 (H) 0 (H) 0 (H) 0 (H ) +, 8 ; 4758 ; 4$58 ; ; + ; 4 ! * 5$7 ; 54= 5" ; 54# 5"$ ; 54! 5$ ; 54 H =5 I 4$# :;@ :;@ :;@ :;@ 9& H =5 I 4$# 9& "!55 ; "555 # L 4# M4) " L 4# M # A 674 /J N N ; B 6# / 1 1 #5 8 8 4 K & .::+ .::+ < * =! * =7 .:: * => SKKH 09-03-2004 NOS (c) by SEMIKRON BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 09-03-2004 NOS (c) by SEMIKRON SKKT 92, SKKH 92, SKKT 92B THYRISTOR Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 09-03-2004 NOS (c) by SEMIKRON BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm & * =7 .::+ < & * => .:: .::+ .::+ < & * # (.::+) This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 09-03-2004 NOS (c) by SEMIKRON