P4SMAJ5.0ADF – P4SMAJ85ADF
Document number: DS39017 Rev. 3 - 2
1 of 6
www.diodes.com
August 2019
© Diodes Incorporated
P4SMAJ5.0ADF – P4SMAJ85ADF
400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
Packaged in the Low Profile D-FLAT to Optimize Board Space
Glass Passivated Die Construction
Excellent Clamping Capability
IEC 61000-4-2 (ESD): Air ±30kV, Contact ±30kV
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: D-FLAT
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Polarity Indicator: Cathode Band
Weight: 0.035 grams (Approximate)
Ordering Information (Note 4)
Part Number
Qualification
Case
Packaging
P4SMAJX.XADF-13
Standard
D-FLAT
10,000/Tape & Reel
P4SMAJXXADF-13
Standard
D-FLAT
10,000/Tape & Reel
*XX = Device Voltage, for example: P4SMAJ17ADF-13.
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Green
Top View
xx = Product Type Marking Code
(See Electrical Characteristics Table)
= Manufacturers’ Code Marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 9 for 2019)
WW = Week Code (01 to 53)
YWW
xx
e3
1 2
Device Schematic
1 = Cathode
2 = Anode
D-FLAT
P4SMAJ5.0ADF – P4SMAJ85ADF
Document number: DS39017 Rev. 3 - 2
2 of 6
www.diodes.com
August 2019
© Diodes Incorporated
P4SMAJ5.0ADF – P4SMAJ85ADF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Pulse Power Dissipation
(Non Repetitive Current Pulse Derated Above TA = +25°C) (Note 5)
PPK
400
W
Peak Forward Surge Current, 8.3ms Single Half Sine Wave
Superimposed on Rated Load (Notes 5 & 6 )
IFSM
40
A
Steady State Power Dissipation @ TL = +75°C
PM(AV)
1.0
W
Instantaneous Forward Voltage @ IPP = 35A (Notes 5 & 6)
VF
3.5
V
Notes: 5. Valid provided that terminals are kept at ambient temperature.
6. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance, Junction to Terminal (Note 7)
RθJT
37
°C/W
Typical Thermal Resistance, Junction to Terminal (Note 8)
RθJT
39
°C/W
Typical Thermal Resistance, Junction to Ambient (Note 7)
RθJA
114
°C/W
Typical Thermal Resistance, Junction to Ambient (Note 8)
RθJA
88
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 7. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.06"*0.09" copper pad.
8. Device mounted on FR-4 substrate, 0.4"*0.5", 2oz, single-sided, PC boards with 0.2"*0.25" copper pad.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Part Number
Reverse
Standoff
Voltage
Breakdown
Voltage
VBR @ IT (Note 9)
Test
Current
Max. Reverse
Leakage @
VRWM
Max. Clamping
Voltage @ IPP
(Note 10)
Max. Peak Pulse
Current
(Note 10)
Marking Code
VRWM (V)
Min (V)
Max (V)
IT (mA)
IR (µA)
VC (V)
IPP (A)
P4SMAJ5.0ADF
5.0
6.40
7.25
10
400
9.2
43.5
HE
P4SMAJ6.0ADF
6.0
6.67
7.37
10
400
10.3
38.8
HG
P4SMAJ6.5ADF
6.5
7.22
7.98
10
250
11.2
35.7
HK
P4SMAJ7.0ADF
7.0
7.78
8.60
10
100
12.0
33.3
HM
P4SMAJ7.5ADF
7.5
8.33
9.21
1.0
50
12.9
31.0
HP
P4SMAJ8.0ADF
8.0
8.89
9.83
1.0
25
13.6
29.4
HR
P4SMAJ8.5ADF
8.5
9.44
10.82
1.0
10
14.4
27.7
HT
P4SMAJ9.0ADF
9.0
10.0
11.5
1.0
5.0
15.4
26.0
HV
P4SMAJ10ADF
10
11.1
12.3
1.0
1.0
17.0
23.5
HX
P4SMAJ11ADF
11
12.2
13.5
1.0
1.0
18.2
22.0
HZ
P4SMAJ12ADF
12
13.3
14.7
1.0
1.0
19.9
20.1
IE
P4SMAJ13ADF
13
14.4
15.9
1.0
1.0
21.5
18.6
IG
P4SMAJ14ADF
14
15.6
17.2
1.0
1.0
23.2
17.2
IK
P4SMAJ15ADF
15
16.7
18.5
1.0
1.0
24.4
16.4
IM
P4SMAJ16ADF
16
17.8
19.7
1.0
1.0
26.0
15.3
IP
P4SMAJ17ADF
17
18.9
20.9
1.0
1.0
27.6
14.5
IR
P4SMAJ18ADF
18
20.0
22.1
1.0
1.0
29.2
13.7
IT
P4SMAJ20ADF
20
22.2
24.5
1.0
1.0
32.4
12.3
IV
P4SMAJ22ADF
22
24.4
26.9
1.0
1.0
35.5
11.2
IX
P4SMAJ24ADF
24
26.7
29.5
1.0
1.0
38.9
10.3
IZ
P4SMAJ26ADF
26
28.9
31.9
1.0
1.0
42.1
9.5
JE
P4SMAJ28ADF
28
31.1
34.4
1.0
1.0
45.4
8.8
JG
P4SMAJ30ADF
30
33.3
36.8
1.0
1.0
48.4
8.3
JK
P4SMAJ33ADF
33
36.7
40.6
1.0
1.0
53.3
7.5
JM
P4SMAJ36ADF
36
40.0
44.2
1.0
1.0
58.1
6.9
JP
Notes: 9. VBR measured with IT current pulse = 10ms to 15ms.
10. Per 10 1000µs waveform. See Figure 4.
P4SMAJ5.0ADF – P4SMAJ85ADF
Document number: DS39017 Rev. 3 - 2
3 of 6
www.diodes.com
August 2019
© Diodes Incorporated
P4SMAJ5.0ADF – P4SMAJ85ADF
Electrical Characteristics (continued) (@TA = +25°C, unless otherwise specified.)
Part Number
Reverse
Standoff
Voltage
Breakdown
Voltage
VBR @ IT (Note 9)
Test
Current
Max. Reverse
Leakage @
VRWM
Max. Clamping
Voltage @ IPP
(Note 10)
Max. Peak Pulse
Current
(Note 10)
Marking Code
VRWM (V)
Min (V)
Max (V)
IT (mA)
IR (µA)
VC (V)
IPP (A)
P4SMAJ40ADF
40
44.4
49.1
1.0
1.0
64.5
6.2
JR
P4SMAJ43ADF
43
47.8
52.8
1.0
1.0
69.4
5.7
JT
P4SMAJ45ADF
45
50.0
55.3
1.0
1.0
72.7
5.5
JV
P4SMAJ48ADF
48
53.3
58.9
1.0
1.0
77.4
5.2
JX
P4SMAJ51ADF
51
56.7
62.7
1.0
1.0
82.4
4.9
JZ
P4SMAJ54ADF
54
60.0
66.3
1.0
1.0
87.1
4.6
RE
P4SMAJ58ADF
58
64.4
71.2
1.0
1.0
93.6
4.3
RG
P4SMAJ60ADF
60
66.7
73.7
1.0
1.0
96.8
4.1
RK
P4SMAJ64ADF
64
71.1
78.6
1.0
1.0
103
3.9
RM
P4SMAJ70ADF
70
77.8
86.0
1.0
1.0
113
3.5
RP
P4SMAJ75ADF
75
83.3
92.1
1.0
1.0
121
3.3
RR
P4SMAJ78ADF
78
86.7
95.8
1.0
1.0
126
3.2
RT
P4SMAJ85ADF
85
94.4
104
1.0
1.0
137
2.9
RV
Notes: 9. VBR measured with IT current pulse = 10ms to 15ms.
10. Per 10 1000µs waveform. See Figure 4.
50
25 50 75 100 125 150
PEAK PULSE DERATING % OF
PEAK POWER OR CURRENT
T , AMBIENT TEMPERATURE (°C)
A
Figure 1 Power Dissipation vs. Ambient Temperature
0
25
75
175 200
100
0
10 X 1000 Waveform
as defined by REA
0
500
1000
1500
2000
2500
525 45 65 85
Note: f = 1MHz, T = 25C, V = 0V dc
A bias
C , TOTAL CAPACITANCE (pF)
T
V , STANDOFF VOLTAGE (V)
WM
Figure 2 Typical Total Capacitance
Note: f = 1MHz, TA = 25°C , VBIAS = 0V DC
P4SMAJ5.0ADF – P4SMAJ85ADF
Document number: DS39017 Rev. 3 - 2
5 of 6
www.diodes.com
August 2019
© Diodes Incorporated
P4SMAJ5.0ADF – P4SMAJ85ADF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
D-FLAT
Dim
Min
Max
A
0.90
1.10
b
1.25
1.65
c
0.10
0.40
D
2.25
2.95
E
3.95
4.60
k
2.80
-
HE
5.00
5.60
L
0.50
1.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
4.65
G
2.80
X
1.85
X1
6.50
Y
1.70
H
D
E
L
b
A
c
Ek
X
G
C
X1
Y
P4SMAJ5.0ADF – P4SMAJ85ADF
Document number: DS39017 Rev. 3 - 2
6 of 6
www.diodes.com
August 2019
© Diodes Incorporated
P4SMAJ5.0ADF – P4SMAJ85ADF
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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