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Document Number 85127
Rev. 1.2, 02-Nov-04
VISHAY
MPS2222A
Vishay Semiconductors
Electrical DC Characteristics
1) Pulse test: pulse width ≤ 300 µs, cycle ≤ 2 %
Electrical AC Characteristics
Parameter Test condition Symbol Min Ty p Max Unit
DC current gain VCE = 10 V, IC = 0.1 mA hFE 35
VCE = 10 V, IC = 1 mA hFE 50
VCE = 10 V, IC = 10 mA hFE 75
hFE 35
VCE = 10 V, IC = 150 mA 1) hFE 100 300
VCE = 1.0 V, IC = 150 mA 1) hFE 50
VCE = 10 V, IC = 500 mA 1) hFE 40
Collector - base breakdown
voltage
IC = 10 µA, IE = 0 V(BR)CBO 75 V
Collector - emitter breakdown
voltage 1)
IC = 10 mA, IB = 0 V(BR)CEO 40 V
Emitter - base breakdown
voltage
IE = 10 µA, IC = 0 V(BR)EBO 6.0 V
Collector - emitter saturation
voltage 1)
IC = 150 mA, IB = 15 mA VCEsat 0.3 V
IC = 500 mA, IB = 50 mA VCEsat 1.0 V
Base - emitter saturation voltage IC = 150 mA, IB = 15 mA VBEsat 0.6 1.2 V
IC = 500 mA, IB = 50 mA VBEsat 2.0 V
Collector-emitter cut-off current VEB = 3 V, VCE = 60 V ICEV 10 nA
Collector-base cut-off current VCB = 60 V, IE = 0 ICBO 0.01 µA
VCB = 50 V, IE = 0, TA = 125 °C ICBO 10 µA
Emitter-base cut-off current VEB = 3 V, IC = 0 IEBO 100 nA
Base cut - off current VCE = 60 V, VEB = 3.0 V IBL 20 nA
Parameter Test condition Symbol Min Ty p Max Unit
Input impedance VCE = 10 V, IC = 1 mA, f = 1 kHz hie 2.0 8.0 kΩ
VCE = 10 V, IC = 10 mA, f = 1 kHz hie 0.25 1.25 kΩ
Voltage feedback ratio VCE = 10 V, IC = 1 mA, f = 1 kHz hre 8 x 10-4
VCE = 10 V, IC = 10 mA, f = 1 kHz hre 4 x 10-4
Current gain - bandwidth
product
VCE = 20 V, IC = 20 mA,
f = 100 MHz
fT300 MHz
Output capacitance VCB = 10 V, f = 1 MHz, IE = 0 COBO 8.0 pF
Input capacitance VEB = 0.5 V, f = 1 MHz, IC = 0 CIBO 25 pF
Output admittance VCE = 10 V, IC = 1 mA, f = 1 kHz hoe 5.0 35 µS
VCE = 10 V, IC = 10 mA, f = 1 kHz hoe 25 200 µS
Small signal current gain VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 50 300
VCE = 10 V, IC = 10 mA, f = 1 kHz hfe 75 375
Collector base time constant IE = 20 mA, VCB = 20 V, f = 31.8
MHz
rb’CC150 ps
Noise figure VCE = 10 V, IC = 100 µA,
RS = 1 kΩ, f = 1 kHz
NF 4.0 dB