Prelim. 4/00
2N6659
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
* Pulse width limited by maximum junction temperature.
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSIST OR
FEATURES
• Switching Regulators
• Converters
• Motor Drivers
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDDrain Current @ TCASE = 25°C
IDDrain Current @ TCASE = 100°C
IDM Pulsed Drain Current *
PDPower Dissipation @ TCASE = 25°C
PDPower Dissipation @ TCASE = 100°C
TjOperating Junction Temperature Range
Tstg Storage Temperature Range
TLLead Temperature (1/16” from case for 10 sec.)
35V
±20V
1.4A
1A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate PIN 3 – Drain
CASE – Drain
0.89
(0.035)max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
0.41 (0.016)
0.53 (0.021)
dia.
123
Prelim. 4/00
2N6659
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
VGS = 0V ID= 10
m
A
VDS = VGS ID= 1mA
VGS = ±15V
VDS = 0V TCASE = 125°C
VDS = 90V VGS = 0V
VDS = 72V VGS = 0V
TCASE = 125°C
VDS = 15V VGS = 10V
VGS = 5V ID= 0.3A
VGS = 10V
ID= 1A TCASE = 125°C
VGS = 5V ID= 0.3A
VGS = 10V
ID= 1A TCASE = 125°C
VDS = 10V ID= 0.5A
VDS = 10V ID= 0.1A
VGS = 10V ID= 1A
f = 1kHz
VDS = 24V
VGS = 0V
f = 1MHz
VDD = 25V VGEN = 10V
RL= 23
W
RG= 25
W
ID= 1A
V(BR)DSS Gate – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate – Body Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS* Forward Transconductance
gOS* Common Source Output Conductance
Small Signal Drain – Source
RDS(on) On Resistance
Cds Drain – Source Capacitance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
tON Turn–On Time
tOFF Turn–Off Time
35 70
0.8 1.6 2
±100
±500
10
500
1.5 1.8
1.8 5
1.3 1.8
2.6 3.6
0.54 1.5
1.3 1.8
2.6 3.6
170 350
1100
1.3 1.8
30 40
35 50
28 40
210
810
910
V
nA
m
A
A
W
V
ms
m
s
W
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: tp
£
80
m
s ,
d£
1%
Parameter Test Conditions Min. Typ. Max. Unit
