FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. * -1.5 A, -30 V. RDS(ON) = 125 m @ V GS = -10 V RDS(ON) = 200 m @ V GS = -4.5 V These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. * High performance trench technology for extremely low RDS(ON) . * Low gate charge (4 nC typical) * High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter -30 V V GSS Gate-Source Voltage 25 V ID Drain Current (Note 1a) -1.5 A PD Power Dissipation for Single Operation (Note 1a) 0.5 (Note 1b) 0.46 - Continuous - Pulsed TJ , TSTG -5 W -55 to +150 C (Note 1a) 250 C/W (Note 1) 75 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 358 FDN358P 7'' 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDN358P Rev E1 (W) FDN358P October 2001 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics V GS = 0 V, ID = -250 A BV DSS BV DSS TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward V GS = 25 V, V DS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse V GS = -25 V, V DS = 0 V -100 nA -3 V On Characteristics -30 ID = -250 A, Referenced to 25C V DS = -24V, V -22 V GS = 0 V mV/C A -1 V DS = -24V, V GS = 0 V, TJ =55C -10 (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C ID(on) On-State Drain Current V GS = -4.5 V, V DS = -5 V gFS Forward Transconductance V DS = -5 V, ID = -1.5 A 3.5 S V DS = -15 V, f = 1.0 MHz V GS = 0 V, 182 pF 56 pF 26 pF V GS(th) V GS(th) TJ RDS(on) V GS = -10 V, -1 -1.9 4 ID = -1.5 A V GS = -10 V, ID = -1.5 A,TJ =125C V GS = -4.5 V, ID = -1.2A, mV/C 105 125 148 210 161 200 -5 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) V DD = -15 V, V GS = -10 V, V DS = -15V, V GS = -10 V ID = -0.5 A, RGEN = 6 ID = -1.5 A, 5 10 ns 13 23 ns 12 21 ns 2 4 ns 4 2.8 nC 0.8 nC 0.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -0.42 A Voltage (Note 2) -0.76 -0.42 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN358P Rev E1 (W) FDN358P Electrical Characteristics FDN358P Typical Characteristics VGS=-10V 2.2 -4.5V -6.0V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 -ID, DRAIN CURRENT (A) 4 -3.5V 3 2 -3.0V 1 2.0 V GS=-4.0V 1.8 1.6 0.5 1 1.5 2 -6.0V -7.0V -10V 1.0 0.8 2.5 0 -V DS, DRAIN TO SOURCE VOLTAGE (V) 1 3 4 5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 1.6 ID = -1.5A V GS = -10V RDS(ON), ON-RESISTANCE (OHM) I D = -0.75A 1.4 1.2 1 0.8 0.3 TA = 125oC 0.2 T A = 25o C 0.1 0.6 -50 -25 0 25 50 75 100 125 0 150 2 4 T J, JUNCTION TEMPERATURE ( oC) 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55o C V DS = -5V -I S, REVERSE DRAIN CURRENT (A) 5 25o C 4 -I D, DRAIN CURRENT (A) 2 -I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -5.0V 1.2 0 0 -4.5V 1.4 125o C 3 2 1 0 V GS = 0V 1 TA = 125oC 0.1 25o C 0.01 -55o C 0.001 0.0001 1.5 2 2.5 3 3.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN358P Rev E1 (W) FDN358P Typical Characteristics 250 ID = -1.5A V DS = -5V 8 200 -15V 6 4 150 100 COSS 2 50 0 0 CRSS 0 1 2 3 4 0 5 Q g, GATE CHARGE (nC) 10 20 25 20 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 1ms 10ms 100ms 1 1s 10s DC 0.1 VGS = -10V SINGLE PULSE R JA = 270 oC/W o T A = 25 C 0.01 0.1 1 30 Figure 8. Capacitance Characteristics. 10 10 SINGLE PULSE RJA = 270C/W TA = 25C 15 10 5 0 0.001 100 0.01 0.1 -V DS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 -V D S, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -10V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 270 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN358P Rev E1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4