ES3A - ES3J Taiwan Semiconductor 3A, 50V - 600V Surface Mount Super Fast Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Super fast recovery time for high efficiency Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS High frequency rectification PARAMETER VALUE UNIT IF(AV) 3 A VRRM 50 - 600 V IFSM 100 A TJ MAX 150 C Package DO-214AB (SMC) Configuration Single die Freewheeling application Switching mode converters and inverters in computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER SYMBOL ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J UNIT Marking code on the device ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature IF(AV) 3 A IFSM 100 A TJ - 55 to +150 C Storage temperature TSTG - 55 to +150 C 1 Version:M1903 ES3A - ES3J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode RJL 12 C/W Junction-to-ambient thermal resistance per diode RJA 47 C/W ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J Reverse current @ rated VR per diode Junction capacitance Reverse recovery time (2) ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J IF = 3A, TJ = 25C TJ = 25C SYMBOL 1 MHz, VR=4.0V IF=0.5A , IR=1.0A IRR=0.25A MAX. UNIT - 0.95 V - 1.30 V - 1.70 V - 10 A - 500 A 45 - pF 30 - pF - 35 ns VF IR TJ = 100C TYP. CJ trr Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:M1903 ES3A - ES3J Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. SUFFIX ES3x (Note 1,2) PACKING CODE SUFFIX PACKING CODE PACKAGE PACKING R7 SMC 850 / 7" Plastic reel R6 SMC 3,000 / 13" Paper reel SMC 3,000 / 13" Plastic reel V7 Matrix SMC 850 / 7" Plastic reel V6 Matrix SMC 3,000 / 13" Plastic reel M6 H G Note : 1. "x" defines voltage from 50V (ES3A) to 600V (ES3J) 2. Only V6 and V7 are all green compound (halogen free) EXAMPLE EXAMPLE P/N PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX DESCRIPTION ES3AHR7G ES3A H R7 G AEC-Q101 qualified Green compound 3 Version:M1903 ES3A - ES3J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.2 Typical Junction Capacitance 3.5 105 3 90 JUNCTION CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current Derating Curve 2.5 2 1.5 1 0.5 75 60 ES3A - ES3D 45 30 ES3F - ES3J 15 f=1.0MHz Vsig=50mVp-p 0 0 0 25 50 75 100 125 1 150 10 LEAD TEMPERATURE (C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics 100 TJ=125C 10 TJ=75C 1 TJ=25C 0.1 20 40 60 80 100 120 140 10 10 UF1DLW 1 ES3F - ES3G TJ=125C ES3A - ES3D 0.01 ES3H - ES3J Pulse width 0.001 0.1 0.3 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=25C 0.1 1 (A) 1000 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) Fig.3 Typical Reverse Characteristics 0 100 0.4 0.6 0.5 0.6 0.8 1 0.7 1.2 0.8 0.9 1.4 1 1.1 1.6 1.8 FORWARD VOLTAGE (V) 4 Version:M1903 1.2 ES3A - ES3J Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) 100 8.3ms Single Half Sine Wave 90 80 70 60 50 40 30 20 10 0 1 10 Fig.6 Typical Transient Thermal Characteristics TRANSIENT THERMAL IMPEDANCE A (C/W) PEAK FORWARD SURGE CURRENT (A) Fig.5 Maximum Non-repetitive Forward Surge Current 100 100 10 1 0.1 0.01 0.1 1 10 100 HEATING TIME (s) NUMBER OF CYCLES AT 60 Hz Fig.7 Reverse Recovery Time Characteristic And Test Circuit Diagram 5 Version:M1903 ES3A - ES3J Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) Unit (mm) DIM. Unit (inch) Min. Max. Min. Max. A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 3.30 0.130 B 2.50 0.098 C 6.80 0.268 D 4.40 0.173 E 9.40 0.370 MARKING DIAGRAM Matrix SMC SMC P/N =Marking Code G =Green Compound YW =Date Code F =Factory Code 6 Version:M1903 ES3A - ES3J Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version:M1903