ES3A - ES3J
Taiwan Semiconductor
1 Version:M1903
3A, 50V - 600V Surface Mount Super Fast Rectifier
FEATURES
● Glass passivated chip junction
● Ideal for automated placement
● Super fast recovery time for high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive
and telecommunication.
MECHANICAL DATA
● Case: DO-214AB (SMC)
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
3
A
VRRM
50 - 600
V
IFSM
100
A
TJ MAX
150
°C
Package
DO-214AB (SMC)
Configuration
Single die
DO-214AB (SMC)
PARAMETER
SYMBOL
ES3A
ES3B
ES3C
ES3D
ES3F
ES3G
ES3H
ES3J
UNIT
Marking code on the device
ES3A
ES3B
ES3C
ES3D
ES3F
ES3G
ES3H
ES3J
Repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Reverse voltage, total rms value
VR(RMS)
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
500
600
V
Forward current
IF(AV)
3
A
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
100
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
ES3A - ES3J
Taiwan Semiconductor
2 Version:M1903
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance per diode
RӨJL
12
°C/W
Junction-to-ambient thermal resistance per diode
RӨJA
47
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Forward voltage per diode (1)
ES3A
ES3B
ES3C
ES3D
IF = 3A, TJ = 25°C
VF
-
0.95
V
ES3F
ES3G
-
1.30
V
ES3H
ES3J
-
1.70
V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
10
µA
TJ = 100°C
-
500
µA
Junction capacitance
ES3A
ES3B
ES3C
ES3D
1 MHz, VR=4.0V
CJ
45
-
pF
ES3F
ES3G
ES3H
ES3J
30
-
pF
Reverse recovery time
IF=0.5A , IR=1.0A
IRR=0.25A
trr
-
35
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ES3A - ES3J
Taiwan Semiconductor
3 Version:M1903
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING
CODE
SUFFIX
PACKAGE
PACKING
ES3x
(Note 1,2)
H
R7
G
SMC
850 / 7" Plastic reel
R6
SMC
3,000 / 13" Paper reel
M6
SMC
3,000 / 13" Plastic reel
V7
Matrix SMC
850 / 7" Plastic reel
V6
Matrix SMC
3,000 / 13" Plastic reel
Note :
1. "x" defines voltage from 50V (ES3A) to 600V (ES3J)
2. Only V6 and V7 are all green compound (halogen free)
EXAMPLE
EXAMPLE P/N
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
DESCRIPTION
ES3AHR7G
ES3A
H
R7
G
AEC-Q101 qualified
Green compound
ES3A - ES3J
Taiwan Semiconductor
4 Version:M1903
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
025 50 75 100 125 150
LEAD TEMPERATURE (°C)
0
15
30
45
60
75
90
105
110 100
JUNCTION CAPACITANCE (pF)
ES3A - ES3D
ES3F - ES3J
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
1000
020 40 60 80 100 120 140
TJ=125°C
TJ=25°C
TJ=75°C
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
ES3H - ES3J
ES3F - ES3G
ES3A - ES3D
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
REVERSE VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
ES3A - ES3J
Taiwan Semiconductor
5 Version:M1903
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.7 Reverse Recovery Time Characteristic And Test Circuit Diagram
Fig.5 Maximum Non-repetitive Forward Surge Current
Fig.6 Typical Transient Thermal Characteristics
0
10
20
30
40
50
60
70
80
90
100
110 100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
0.1
1
10
100
0.01 0.1 1 10 100
HEATING TIME (s)
PEAK FORWARD SURGE CURRENT (A)
TRANSIENT THERMAL IMPEDANCE A (°C/W)
ES3A - ES3J
Taiwan Semiconductor
6 Version:M1903
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
DIM.
Unit (mm)
Unit (inch)
Min.
Max.
Min.
Max.
A
2.90
3.20
0.114
0.126
B
6.60
7.11
0.260
0.280
C
5.59
6.22
0.220
0.245
D
2.00
2.62
0.079
0.103
E
1.00
1.60
0.039
0.063
F
7.75
8.13
0.305
0.320
G
0.10
0.20
0.004
0.008
H
0.15
0.31
0.006
0.012
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Matrix SMC SMC
Symbol
Unit (mm)
Unit (inch)
A
3.30
0.130
B
2.50
0.098
C
6.80
0.268
D
4.40
0.173
E
9.40
0.370
P/N
=Marking Code
G
=Green Compound
YW
=Date Code
F
=Factory Code
ES3A - ES3J
Taiwan Semiconductor
7 Version:M1903
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.