FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high transconductance, low gate capacitance and extremely low leakage current; all important factors in achieving low noise preamplification. The nitride passivation and gold metallization for this device assures superior lifetime performance and reliability. LG PACKAGE FEATURES * * * * High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C) Item Symbol Conditions Ratings Unit Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS -5 V 1.0 W Total Power Dissipation Tc = 25C PT Storage Temperature Tstg -65 to 175 C Channel Temperature Tch +175 C Thermal Resistance Rth 150 C/W Channel to Case ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Drain Current Min. Limits Typ. Max. VDS=3V, VGS=0V 35 55 75 mA Symbol IDSS Conditions Unit Transconductance gm VDS=3V, IDS=10mA 28 40 - mS Pinch-off Voltage Vp VDS=3V, IDS=1mA -0.7 -1.2 -1.7 V - 20 40 nA FSX017X/001 - 0.35 - FSX017LG/001 - 0.55 - - 0.03 - Gate-Source Leakage Current IGSO VGS=-2V Gate-Source Capacitance CGS VDS=3V IDS=10mA CGD VDS=3V, IDS=10mA Gate-Drain Capacitance Edition 1.1 May 1998 1 pF pF FSX017LG/001 FSX017X/001 GaAs FET Gate-Source Leakage Current vs. Gate-Source Voltage Drain Current (mA) 60 Gate-Source Leakage Current (nA) Drain Current vs. Drain-Source Current VGS=0 50 VGS=-0.25 40 VGS=-0.5 30 20 VGS=-0.75 10 0 VGS=-1.0 VGS=-1.25 0 4 2 6 8 10 25 20 15 10 5 0 12 0 1.0 1.5 2.0 2.5 Gate-Source Voltage (V) Drain-Source Voltage (V) Gate-Source Capacitance vs. Drain Current Transconductance vs. Gate-Source Voltage 0.7 70 VDS=3V FSX017LG/001 VDS=3V 60 0.6 Transconductance (mS) Gate-Source Capacitance (pF) 0.5 0.5 FSX017X/001 0.4 50 40 30 20 10 0.3 0 10 20 30 40 50 0 -1.2 Drain Current (mA) -0.8 -0.4 Gate-Source Voltage (V) 2 0 FSX017LG/001 FSX017X/001 GaAs FET BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and personnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment. 2. Die-Attach 2.1 The die-attach station must have an accurate temperature control, and an inert forming gas should be used. 2.2 Chips should be kept at room temperature, except during die-attach. 2.3 Place package or carrier on the heated stage. 2.4 Place the solder at the position where the chip will be bonded. 2.5 Lightly grasp the chip edges using tweezers and scrub the die onto the Au-Sn solder preform. The die attach conditions are: 300 to 310C for 30 to 60 seconds. The Au-Sn (80-20) solder preform volume should be about 3.2x10-3 mm3 for FSX017X/001. 3. Wire Bonding 3.1 Bonding Condition The bonder must be properly grounded. Wire bonding should be performed with a thermal compression bonder using 0.7 to 1.0 mil diameter, half hard, 3-8% elongation gold wire. 3.2 Wire Layout The wire bonding should be performed as shown in the following example. Wire Layout FSX017X/001 3 FSX017LG/001 FSX017X/001 Case Style "LG" Metal-Ceramic Package 2 MIN. (0.079) 2 MIN. (0.079) 1.0 (0.039) 1.780.15 (0.07) 1 2 4 3 2 MIN. (0.079) 2 MIN. (0.079) 0.5 (0.02) 1.3 Max (0.051) 1.780.15 (0.07) 0.1 (0.004) 1: Gate 2: Source 3: Drain 4: Source Unit: mm (Inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0)1628 504800 FAX: +44 (0)1628 504888 * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4