FSX017LG/001
FSX017X/001
GaAs FET
1
Edition 1.1
May 1998
DESCRIPTION
The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs
MESFETs for use as the FET front end of an optical receiver in high speed
lightwave communication systems. The N-channel design with 0.5 micron
gate length, and high speed Schottky-Barrier gate FET combines high
transconductance, low gate capacitance and extremely low leakage current;
all impor tant factors in achieving low noise preamplification.The nitride
passivation and gold metallization for this device assures superior lifetime
perfor mance and reliability.
FEATURES
• High Transconductance
• Low Leakage Current
• Low Gate Capacitance
• Gold Bonding System
Item Conditions
Drain Current
Transconductance
Gate-Source Leakage Current
Gate-Drain Capacitance
Symbol
IDSS
IGSO
CGD
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
mA
nA
mS
pF
Unit
gm
Pinch-off Voltage VpV
Gate-Source Capacitance pFCGS
Limits
75
40
-
Max.
35
-1.7-0.7
28 -
-FSX017X/001
FSX017LG/001
-
-
-
Min. 55
-1.2
40
0.35
--0.55
20
0.03
Typ.
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Symbol
Tstg
VDS 12
-5
1.0
-65 to 175
W
¡C
V
V
VGS
PT
Channel Temperature +175 ¡C
Tch
Thermal Resistance 150
Channel to Case
Tc = 25¡C
¡C/W
Rth
RatingsConditions Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25¡C)
VGS=-2V
VDS=3V
IDS=10mA
VDS=3V, IDS=10mA
VDS=3V, VGS=0V
VDS=3V, IDS=10mA
VDS=3V, IDS=1mA
LG PACKAGE
2
FSX017LG/001
FSX017X/001
GaAs FET
Drain Current vs. Drain-Source Current
Drain-Source Voltage (V)
Drain Current (mA)
00
20
10
30
40
50
60
24 6 8 10 12
VGS=0
VGS=-0.25
VGS=-0.5
VGS=-0.75
VGS=-1.0
VGS=-1.25
Gate-Source Capacitance vs. Drain Current
Drain Current (mA)
Gate-Source Capacitance (pF)
Gate-Source Leakage Current
vs. Gate-Source Voltage
VDS=3V FSX017LG/001
FSX017X/001
0.4
0.3
0.5
0.6
0.7
100
0
0
20 30 40 50
Gate-Source Voltage (V)
Gate-Source Leakage Current (nA)
5
10
15
20
25
0.5 1.0 1.5 2.0 2.5
Transconductance vs. Gate-Source Voltage
Gate-Source Voltage (V)
Transconductance (mS)
VDS=3V
40
30
20
10
0
50
60
70
-0.8-1.2 -0.4 0
3
FSX017LG/001
FSX017X/001
GaAs FET
FSX017X/001
BONDING PROCEDURE FOR FET CHIPs
Caution must be excercised to prevent static build up by proper grounding of all equipment and per-
sonnel. All operations must be perfor med in a clean, dust-free and dry environment.
1. Storage Condition: Store in a clean, dr y nitrogen environment.
2. Die-Attach
2.1 The die-attach station must have an accurate temperature control, and an iner t
for ming gas should be used.
2.2 Chips should be kept at room temperature, except during die-attach.
2.3 Place package or carrier on the heated stage.
2.4 Place the solder at the position where the chip will be bonded.
2.5 Lightly grasp the chip edges using tweezers and scrub the die onto the Au-Sn
solder prefor m. The die attach conditions are: 300 to 310°C for 30 to 60 seconds.The Au-Sn
(80-20) solder prefor m volume should be about 3.2x10-3 mm3for FSX017X/001.
3.Wire Bonding
3.1 Bonding Condition
The bonder must be properly grounded.Wire bonding should be performed with a
ther mal compression bonder using 0.7 to 1.0 mil diameter, half hard, 3-8%
elongation gold wire.
3.2 Wire Layout
The wire bonding should be perfor med as shown in the following example.
Wire Layout
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0)1628 504800
FAX: +44 (0)1628 504888
Fujitsu Limited reser ves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
(0.039)
(0.07)
1.78±0.15
1.3 Max
(0.051)
0.1
(0.004)
1
2
3
0.5
(0.02)
1.0
1: Gate
2: Source
3: Drain
4: Source
Unit: mm (Inches)
Case Style "LG"
Metal-Ceramic Package
1.78±0.15
(0.07)
4
2 MIN.
(0.079) 2 MIN.
(0.079)
2 MIN.
(0.079) 2 MIN.
(0.079)
FSX017LG/001
FSX017X/001
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.