PF5000 – PF5006 1 of 2 © 2006 Won-Top Electronics
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PF5000 – PF5006
50A 1/2" PRESS-FIT DIODE
Features
! Diffused Junction
! Low Leakage A
! Low Cost Anode +
! High Surge Current Capability
! Typical IR less than 5.0µA
Mechanical Data
! Case: DO-21, Copper Case and Components C
Herm etic all y Sealed
! Terminals: Contact Areas Readily Solderable
! Polarity: Cathode to Case (Reverse Units Are F
Available Upon Request and Are Designated
By A “R” Suffix, i.e. PF5002R or PF5004R)
! Polarity: Red Color Equals Standard, D
Black Color Equals Reverse Polarity E
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version, B
Add “-LF” Suffix to Part Number, See Page 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate current by 20%.
Characteristic Symbol PF5000 PF5001 PF5002 PF5003 PF5004 PF5005 PF5006 Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 300 400 500 600 V
RMS Reverse Voltage VR(RMS) 35 70 140 210 280 350 420 V
Average Rectified Output Current @TC = 150°C IO50 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 500 A
Forward Voltage @IF = 50A VFM 1.0 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 5.0
500 µA
Typi cal Junction Capacitanc e (Note 1) Cj400 pF
Typical Thermal Resistance (Note 2) RJC 1.0 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +175 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
WTE
POWER SEMICONDUCTORS
DO-21
Dim Min Max
A15.77 15.97
B12.73 12.82
C1.25 1.31
D9.55 9.85
E5.70 5.90
F28.00 —
All Dimensions in mm