TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31/TIP31A/TIP31B/TIP31C Rev. A 1
July 2008
TIP31/TIP31A/TIP31B/TIP31C
NPN Epitaxial Silicon Transistor
Features
• Complementary to TIP32/TIP32A/TIP32B/TIP32C
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
40
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
40
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 3 A
ICP Collector Current (Pulse ) 5 A
IB Base Current 1 A
PC Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperatur e - 65 ~ 150 °C
1. Base 2. Collector 3. Emitter
TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31/TIP31A/TIP31B/TIP31C Rev. A 2
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
IC = 30mA, IB = 0 40
60
80
100
V
V
V
V
ICEO Collector Cut-off Current
: TIP31/31A
: TIP31B/31C VCE = 30V, IB = 0
VCE = 60V, IB = 0 0.3
0.3 mA
mA
ICES Collector Cut-off Current: TIP31
: TIP31A
: TIP31B
: TIP31C
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
200
200
200
200
μA
μA
μA
μA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain VCE = 4V, IC = 1A
VCE = 4V, IC = 3A 25
10 50
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V
VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 3A 1.8 V
fT Current Gain Bandwid th Product VCE = 10V, IC = 500mA, f = 1MHz 3.0 MHz
TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31/TIP31A/TIP31B/TIP31C Rev. A 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
10 100
0.1
1
10
100μs
TIP31C VCEO MAX.
TIP31B VCEO MAX.
TIP31A VCEO MAX.
TIP31 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
45
50
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31/TIP31A/TIP31B/TIP31C Rev. A 4
Mechanical Dimensions
TO220
TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon TransistorTIP31/TIP31A/TIP31B/TIP31C
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31/TIP31A/TIP31B/TIP31C Rev. A 5
