MGA-30789 2 - 6GHz High Linearity Gain Block Data Sheet Description Features Avago Technologies' MGA-30789 is a broadband, high linearity gain block MMIC amplifier achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. High linearity The device required simple dc biasing components to achieve wide bandwidth performance. The temperature compensated internal bias circuit provides stable current over temperature and process threshold voltage variation. GaAs E-pHEMT Technology[1] Built in temperature compensated internal bias circuitry No RF matching components required Standard SOT89 package Single, Fixed 5V supply Excellent uniformity in product specifications The MGA-30789 is housed inside a low cost RoHS compliant SOT89 industry standard SMT package (4.5 x 4.1 x 1.5 mm). MSL-2 and Lead-free halogen free Component Image Specifications High MTTF for base station application 3.5GHz; 5V, 100mA (typical) 11.7 dB Gain 41.8 dBm Output IP3 7GX 3.3 dB Noise Figure 25 dBm Output Power at 1dB gain compression #1 #2 RFin GND Top View #3 RFout #3 #2 RFout GND #1 RFin Bottom View Notes: Package marking provides orientation and identification "7G"= Device Code "X" = Month of Manufacture 5GHz; 5V, 100mA (typical) 8.8 dB Gain 40 dBm Output IP3 2.7 dB Noise Figure 25.7 dBm Output Power at 1dB gain compression Applications Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 110 V ESD Human Body Model = 2000 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. RF driver amplifier General purpose gain block Note: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Absolute Maximum Rating[1] TA=25C Thermal Resistance Symbol Parameter Units Absolute Max. Vdd,max Device Voltage, RF output to ground V 5.5 Pin,max CW RF Input Power dBm 24 Pdiss Total Power Dissipation [3] W 0.75 Tj,MAX Junction Temperature C 150 TSTG Storage Temperature C -65 to 150 Thermal Resistance [3] JC = 52C/W (Vdd = 5, Ids = 88 mA, Tc = 85C) Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infrared measurement technique. 3. This is limited by maximum Vdd and Ids. Derate 19.2 mW/C for Tc >111C. Product Consistency Distribution Charts[1, 2] LSL USL 90 100 110 LSL 8 Figure 1. Ids, LSL=83mA , nominal=100mA, USL=117mA USL 8.5 9 9.5 10 Figure 2. Gain, LSL=8dB, nominal=8.8dB, USL=10.3dB LSL LSL 38 39 40 41 24.5 42 Figure 3. OIP3, LSL=38dBm, nominal=41dBm 25 25.5 26 Figure 4. P1dB, LSL=24.5dBm, nominal=25.7dBm USL Notes: 1. Distribution data sample size is 2000 samples taken from 3 different wafer lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements were made on a characterization test board, which represents a trade-off between optimal OIP3, gain and P1dB. Circuit trace losses have not been de-embedded from measurements above. 2.4 2.5 2.6 2.7 2.8 2.9 Figure 5. NF, nominal=2.7dB, USL=3.3dB 2 3 3.1 3.2 3.3 Electrical Specifications [1] TA = 25C, Vdd =5V Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. Ids Quiescent current N/A mA 83 100 117 Gain Gain 3.5 GHz 5 GHz dB 8 11.8 8.8 10.3 3.5 GHz 5 GHz dBm 38 41.8 40 - 3.5 GHz 5 GHz dB - 3.3 2.7 3.3 OIP3 [2] NF Output Third Order Intercept Point Noise Figure S11 Input Return Loss, 50 source 3.5 GHz 5 GHz dB -12 -8.5 S22 Output Return Loss, 50 load 3.5 GHz 5 GHz dB -10.5 -9.5 S12 Reverse Isolation 3.5 GHz 5 GHz dB -25 -22 OP1dB Output Power at 1dB Gain Compression 3.5 GHz 5 GHz dBm 24.5 24.5 25.7 - Notes: 1. Measurements obtained using demo board described in Figure 30 and 31. 3.5GHz data was taken with 3GHz - 4GHz Application Test Circuit and 5GHz data with 4GHz - 6GHz Application Test Circuit respectively. 2. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -10dBm per tone measured at worse side band 3. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note (if applicable) for more details. 3 Typical Performance (2GHz - 3GHz) TA = 25C, Vdd = 5V, Input Signal = CW unless stated otherwise. Application Test Circuit is shown in Figure 30 and Table 1. 3.0 2.9 3.0 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 85C 25C -40C 2.0 P1dB(dBm) 3.0 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 30 29 28 27 26 25 24 23 22 21 20 Frequency (GHz) Frequency (GHz) Figure 8. OIP3 over Frequency and Temperature Figure 9. P1dB over Frequency and Temperature 0 0 Figure 10. S11 over Frequency and Temperature Frequency (GHz) Figure 11. S22 over Frequency and Temperature 3.0 2.8 2.7 2.6 2.5 2.4 2.3 3.0 2.9 2.8 2.7 2.6 2.5 2.4 2.3 -25 2.2 -25 2.1 -20 2.0 -20 2.2 -15 2.1 -15 -10 2.0 S22 (dB) -10 Frequency (GHz) 85C 25C -40C -5 2.9 85C 25C -40C -5 S11 (dB) 2.8 Figure 7. Gain over Frequency and Temperature 85C 25C -40C 2.0 OIP3 (dBm) Figure 6. Ids over Temperature 4 2.7 Frequency (GHz) Temperature (C) 50 48 46 44 42 40 38 36 34 32 30 2.6 85C 25C -40C 2.5 90 80 70 60 50 40 30 20 10 0 -10 -20 -30 70 -40 80 2.4 90 2.3 100 2.2 Gain (dB) Ids (mA) 110 2.1 120 15 14 13 12 11 10 9 8 7 6 5 2.0 130 Typical Performance (2GHz - 3GHz) Frequency (GHz) 3.0 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 85C 25C -40C 2.1 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 2.0 3.0 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 NF(dB) 85C 25C -40C 2.1 -20 -21 -22 -23 -24 -25 -26 -27 -28 -29 -30 -31 -32 -33 -34 -35 2.0 S12 (dB) TA = 25C, Vdd = 5V, Input Signal = CW unless stated otherwise. Application Test Circuit is shown in Figure 30 and Table 1. Frequency (GHz) Figure 12. S12 over Frequency and Temperature Figure 13. Noise Figure over Frequency and Temperature Typical Performance (3GHz - 4GHz) TA = 25C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 2. Figure 16. OIP3 over Frequency and Temperature Frequency (GHz) Figure 17. P1dB over Frequency and Temperature 4.0 4.0 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.2 3.1 4.0 3.9 3.8 26 25 24 23 22 21 20 85C 25C -40C 3.0 P1dB(dBm) Frequency (GHz) 3.7 3.6 3.5 3.4 3.3 3.2 85C 25C -40C 3.1 3.9 3.8 3.7 Figure 15. Gain over Frequency and Temperature 30 29 28 27 3.0 OIP3 (dBm) Figure 14. Ids over Temperature 5 3.6 Frequency (GHz) Temperature (C) 50 48 46 44 42 40 38 36 34 32 30 3.5 90 80 70 60 50 40 30 20 10 0 -10 -20 -30 70 -40 80 3.4 90 3.3 100 3.2 Gain (dB) Ids (mA) 110 85C 25C -40C 3.1 120 15 14 13 12 11 10 9 8 7 6 5 3.0 130 Typical Performance (3GHz - 4GHz) TA = 25C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 2. 0 0 -10 Frequency (GHz) Frequency (GHz) 4.0 3.8 3.7 4.0 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.2 3.1 4.0 85C 25C -40C -32 3.2 -29 85C 25C -40C 3.1 NF(dB) -26 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 3.0 -23 3.0 3.6 Figure 19. S22 over Frequency and Temperature -20 S12 (dB) 3.5 Frequency (GHz) Figure 18. S11 over Frequency and Temperature -35 3.4 3.3 3.2 4.0 3.9 3.8 3.7 3.6 3.5 -25 3.4 -25 3.3 -20 3.2 -20 3.1 -15 3.0 S22 (dB) -15 3.1 85C 25C -40C -5 -10 3.0 S11 (dB) -5 3.9 85C 25C -40C Frequency (GHz) Figure 20. S12 over Frequency and Temperature Figure 21. Noise Figure over Frequency and Temperature Typical Performance (4GHz - 6GHz) TA = 25C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 3. 120 Gain (dB) Ids (mA) 110 100 90 Temperature (C) Figure 22. Ids over Temperature 6 90 80 70 60 50 40 30 20 10 0 -10 -20 -30 70 -40 80 15 14 13 12 11 10 9 8 7 6 5 85C 25C -40C 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 130 Frequency (GHz) Figure 23. Gain over Frequency and Temperature Typical Performance (4GHz - 6GHz) 30 29 28 27 26 25 24 23 22 21 20 85C 25C -40C 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 85C 25C -40C P1dB(dBm) Frequency (GHz) Frequency (GHz) Figure 24. OIP3 over Frequency and Temperature Figure 25. P1dB over Frequency and Temperature 0 0 85C 25C -40C -15 -10 -15 -20 -20 -25 -25 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 S22 (dB) -10 -5 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (GHz) Frequency (GHz) Figure 26. S11 over Frequency and Temperature Figure 27. S22 over Frequency and Temperature 5.0 -18 85C 25C -40C 4.5 4.0 -22 NF(dB) -24 Frequency (GHz) Figure 29. Noise Figure over Frequency and Temperature 2.4 2.3 2.2 2.1 2.0 1.9 1.0 1.8 1.5 1.7 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Figure 28. S12 over Frequency and Temperature 2.0 1.6 85C 25C -40C Frequency (GHz) 7 3.0 2.5 -26 -28 3.5 1.5 S12 (dB) -20 2.6 S11 (dB) -5 85C 25C -40C 2.5 50 48 46 44 42 40 38 36 34 32 30 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 OIP3 (dBm) TA = 25C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 3. Application Schematic Components Table and Demo Board Vdd C1 Top View C2 C3 L1 RFin C14 C7 L3 RFin 1 GND 2 Vdd RFout 3 C8 RFout L4 Figure 30. Application Schematic C14 - Recommended PCB material is 10 mils Rogers RO4350, with FR4 backing for mechanical strength. - Suggested component values may vary according to layout and PCB material. Figure 31. Demo board Layout 8 Demo board Part List Table 1. 2GHz - 3GHz Application Schematic Components Circuit Symbol Size Value Part Number Description L1 0402CS 19nH 0402CS-19NX (CoilCraft) Wire Wound Chip Inductor L3 NA L4 0402 4.3nH 0402CS-4N3X (CoilCraft) Wire Wound Chip Inductor C1 0402 100pF GRM1555C1H101JZ01 (Murata) Ceramic Chip Capacitor C2 0402 0.1uF GRM155R71C104KA88D (Murata) Ceramic Chip Capacitor C3 0805 2.2uF GRM21BR61E225KA12L (Murata) Ceramic Chip Capacitor C7 0402 10pF GRM1555C1H100JZ01 (Murata) Ceramic Chip Capacitor C8 0402 2.2pF GRM1555C1H2R2CA01 (Murata) Ceramic Chip Capacitor C14 0402 1.2nH LL1005-FHL1N2 (Toko) MLC Inductor Table 2. 3GHz - 4GHz Application Schematic Components Circuit Symbol Size Value Part Number Description L1 0603 4.7nH 0603CS-4N7X (CoilCraft) Wire Wound Chip Inductor L3 NA L4 0402 100nH LL1005-FHLR10J (Toko) MLC Inductor C1 0402 100pF GRM1555C1H101JZ01B (Murata) Ceramic Chip Capacitor C2 0402 0.1uF GRM155R71C104KA88D (Murata) Ceramic Chip Capacitor C3 0805 2.2uF GRM21BR61E225KA12L (Murata) Ceramic Chip Capacitor C7 0402 10pF GRM1555C1H100JA01 (Murata) Ceramic Chip Capacitor C8 0402 5.6pF GRM1555C1H5R6CA01 (Murata) Ceramic Chip Capacitor C14 NA Table 3. 4GHz - 6GHz Application Schematic Components Circuit Symbol Size Value Part Number Description L1 0603 5.1nH LLQ1608-F5N1 (Toko) Wire Wound Chip Inductor L3 0402 4.7nH LL1005-FHL4N7 (Toko) MLC Inductor C1 0402 100pF GRM1555C1H101JZ01 (Murata) Ceramic Chip Capacitor C2 0402 0.1uF GRM155R71C104KA88D (Murata) Ceramic Chip Capacitor C3 0805 2.2uF GRM21BR61E225KA12L (Murata) Ceramic Chip Capacitor C7 0402 2.2pF CM05CH2R2C50AH (Kyocera) Ceramic Chip Capacitor C8 0402 2.2pF CM05CH2R2C50AH (Kyocera) Ceramic Chip Capacitor L4 C14 9 NA NA Test Circuit for S-Parameter and Noise Parameter Top View Port1 RFin 1 GND 2 Vdd 3 RFout Figure 32. S-parameter and Noise parameter test circuit 10 Port2 / Bias Tee Typical S-Parameter (Vdd = 5V, TA = 25C, 50 ohm) Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 0.1 -0.89 171.29 -63.15 137.09 -70.77 74.72 -6.40 178.55 0.5 -0.87 134.26 -56.43 159.75 -58.33 62.10 -7.78 155.81 1 -1.28 79.26 -21.10 165.63 -53.76 50.95 -12.61 144.22 1.5 -2.61 5.44 3.05 90.24 -40.55 11.02 -13.88 -157.29 2 -8.89 -48.46 13.14 -45.05 -30.39 -122.16 -7.87 155.45 2.2 -10.88 -75.15 13.54 -82.79 -29.06 -158.46 -8.29 148.89 2.4 -14.73 -111.10 13.66 -114.23 -27.99 172.79 -7.98 144.64 2.6 -20.58 -165.76 13.51 -141.52 -27.15 148.77 -7.42 139.09 2.8 -22.68 110.04 13.18 -165.17 -26.55 129.02 -7.02 133.06 3 -20.20 53.49 12.79 174.17 -26.01 112.23 -6.75 127.76 3.2 -18.95 13.54 12.36 155.70 -25.56 97.67 -6.59 123.30 3.4 -18.13 -25.72 11.96 138.97 -25.14 84.61 -6.50 119.81 3.6 -16.60 -63.19 11.55 123.41 -24.75 72.79 -6.39 116.90 3.8 -14.55 -93.60 11.13 108.88 -24.41 61.86 -6.31 113.70 4 -12.62 -116.51 10.71 95.32 -24.10 51.65 -6.27 110.52 4.2 -11.03 -134.23 10.30 82.60 -23.82 41.96 -6.30 106.60 4.4 -9.89 -148.50 9.90 70.48 -23.57 33.02 -6.43 102.28 4.6 -9.17 -160.67 9.54 59.03 -23.29 24.51 -6.60 97.08 4.8 -8.72 -172.00 9.23 48.03 -22.99 16.15 -6.84 91.25 5 -8.54 176.59 8.95 37.24 -22.69 7.90 -7.06 84.67 5.2 -8.98 162.84 8.82 25.05 -22.25 -1.75 -7.37 70.40 5.4 -8.89 149.06 8.51 14.69 -22.01 -9.74 -7.27 65.40 5.6 -8.89 134.06 8.20 4.48 -21.79 -17.80 -7.09 60.58 5.8 -8.87 117.54 7.91 -5.83 -21.60 -26.09 -6.89 55.99 6 -8.74 99.65 7.58 -16.09 -21.45 -34.31 -6.67 51.77 6.2 -8.36 81.31 7.21 -26.36 -21.36 -42.67 -6.38 47.34 6.4 -7.71 63.61 6.82 -36.57 -21.32 -51.08 -6.06 42.69 6.6 -6.88 47.92 6.38 -46.67 -21.35 -59.31 -5.73 37.79 6.8 -6.01 34.84 5.86 -56.40 -21.46 -67.30 -5.43 32.62 7 -5.21 24.24 5.32 -65.48 -21.59 -74.72 -5.16 27.32 8 -3.02 -3.41 3.00 -103.98 -22.10 -105.83 -4.71 -5.35 9 -2.59 -27.30 1.34 -139.80 -22.25 -135.66 -4.53 -43.08 10 -2.12 -67.56 -0.79 -177.42 -23.00 -168.17 -3.86 -73.44 11 -1.21 -103.01 -4.16 150.87 -25.17 164.20 -2.79 -92.66 12 -0.80 -117.86 -7.00 130.49 -26.95 146.68 -2.33 -103.81 13 -0.88 -131.07 -8.26 108.78 -27.28 127.48 -2.27 -121.44 14 -1.02 -151.35 -8.82 81.73 -26.93 103.00 -2.42 -146.67 15 -0.93 -174.30 -10.38 52.63 -27.48 77.03 -2.03 -177.32 16 -0.83 173.31 -12.04 36.30 -27.78 64.17 -1.57 173.29 17 -0.93 162.53 -12.15 20.39 -26.28 48.69 -1.69 161.95 18 -1.09 149.25 -11.95 2.84 -24.66 32.64 -1.62 149.85 19 -1.52 132.50 -10.69 -19.47 -22.19 10.57 -2.31 131.12 20 -1.75 111.66 -10.17 -46.41 -20.49 -16.89 -2.46 104.29 11 Typical Noise Parameters (Vdd = 5V, TA = 25C, 50 ohm) Part Number Ordering Information Freq (GHz) Fmin (dB) opt Mag opt Ang Rn/Z0 Part Number No. of Devices Container 2.0 5.5 0.25 52 1.1 MGA-30789-BLKG 100 Antistatic Bag 2.5 3.81 0.26 77 0.81 MGA-30789-TR1G 3000 13" Tape/Reel 3.0 3.14 0.27 110 0.40 3.5 2.36 0.28 159 0.20 4.0 2.17 0.29 -163 0.19 4.5 2.28 0.30 -125 0.23 5.0 2.61 0.31 -97 0.38 5.5 2.68 0.32 -59 0.59 6.0 2.78 0.33 -27 0.53 SOT89 Package Dimensions D D1 H POLISH E1 OR E L e S C e1 MATTE FINISH DIMENSIONS IN MILLIMETERS A b 12 b1 b POLISH DIMENSIONS IN INCHES SYMBOLS MIN NOM MAX MIN NOM MAX A 1.40 1.50 1.60 0.055 0.059 0.063 L 0.89 1.04 1.20 0.0350 0.041 0.047 b 0.36 0.42 0.48 0.014 0.016 0.018 b1 0.41 0.47 0.53 0.016 0.018 0.030 C 0.38 0.40 0.43 0.014 0.015 0.017 D 4.40 4.50 4.60 0.173 0.177 0.181 D1 1.40 1.60 1.75 0.055 0.062 0.069 E 3.94 - 4.25 0.155 - 0.167 E1 2.40 2.50 2.60 0.094 0.098 0.102 e1 2.90 3.00 3.10 0.114 0.118 0.122 H 0.35 0.40 0.45 0.014 0.016 0.018 S 0.65 0.75 0.85 0.026 0.030 0.034 e 1.40 1.50 1.60 0.054 0.059 0.063 Device Orientation USER FEED DIRECTION 7GX 7GX 7GX CARRIER TAPE 7GX REEL COVER TAPE Tape Dimensions O 1.5 +0.1/-0.0 8.00 0.30 .05 O 1.50 MIN. 2.00 .05 SEE NOTE 3 4.00 SEE NOTE 1 1.75 .10 A R 0.3 MAX. 5.50 .05 SEE NOTE 3 Bo 12.0 .3 A Ko Ao SECTION A - A 13 Ao = 4.60 Bo = 4.90 Ko = 1.90 R 0.3 TYP. DIMENSIONS IN MM NOTES: 1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE 0.2 2. CAMBER IN COMPLIANCE WITH EIA 481 3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED AS TRUE POSITION OF POCKET, NOT POCKET HOLE Reel Dimensions - 13" Reel R R LOKREEL MINNEAPOLIS USA U.S PAT 4726534 102.0 REF 1.5 ATTENTION Electrostatic Sensitive Devices Safe Handling Required 88 REF 330.0 REF "A" 96.5 6 PS Detail "B" 6 PS Detail "A" 8.4 - 0.2 (MEASURED AT HUB) 11.1 MAX. O 20.2 Dimensions in mm M IN +0.5 O 13.0 -0.2 2.0 0.5 For product information and a complete list of distributors, please go to our web site: +0.3 (MEASURED AT HUB) www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2012 Avago Technologies. All rights reserved. AV02-2249EN - August 1, 2012