MGA-30789
2 - 6GHz
High Linearity Gain Block
Data Sheet
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 110 V
ESD Human Body Model = 2000 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Description
Avago Technologies’ MGA-30789 is a broadband, high
linearity gain block MMIC ampli er achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The device required simple dc biasing components to
achieve wide bandwidth performance. The temperature
compensated internal bias circuit provides stable current
over temperature and process threshold voltage
variation.
The MGA-30789 is housed inside a low cost RoHS
compliant SOT89 industry standard SMT package (4.5 x
4.1 x 1.5 mm).
Component Image
Notes:
Package marking provides orientation and identi cation
“7G” = Device Code
“X” = Month of Manufacture
Features
High linearity
Built in temperature compensated internal bias
circuitry
No RF matching components required
GaAs E-pHEMT Technology[1]
Standard SOT89 package
Single, Fixed 5V supply
Excellent uniformity in product speci cations
MSL-2 and Lead-free halogen free
High MTTF for base station application
Speci cations
3.5GHz; 5V, 100mA (typical)
11.7 dB Gain
41.8 dBm Output IP3
3.3 dB Noise Figure
25 dBm Output Power at 1dB gain compression
5GHz; 5V, 100mA (typical)
8.8 dB Gain
40 dBm Output IP3
2.7 dB Noise Figure
25.7 dBm Output Power at 1dB gain compression
Applications
RF driver ampli er
General purpose gain block
Note:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
7GX
Top View
RFin GND RFout
#1 #2 #3
Bottom View
RFout GND RFin
#3 #2 #1
2
Absolute Maximum Rating[1] TA=25°C
Symbol Parameter Units Absolute Max.
Vdd,max Device Voltage, RF output to ground V 5.5
Pin,max CW RF Input Power dBm 24
Pdiss Total Power Dissipation [3] W 0.75
Tj,MAX Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance
Thermal Resistance [3] JC = 52°C/W
(Vdd = 5, Ids = 88 mA, Tc = 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. This is limited by maximum Vdd and Ids.
Derate 19.2 mW/°C for Tc >111°C.
Product Consistency Distribution Charts[1, 2]
Figure 1. Ids, LSL=83mA , nominal=100mA, USL=117mA Figure 2. Gain, LSL=8dB, nominal=8.8dB, USL=10.3dB
Figure 5. NF, nominal=2.7dB, USL=3.3dB
Figure 3. OIP3, LSL=38dBm, nominal=41dBm Figure 4. P1dB, LSL=24.5dBm, nominal=25.7dBm
2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3
USL
90 100 110
USLLSL
38 39 40 41 42
LSL
8 8.5 9 9.5 10
USLLSL
24.5 25 25.5 26
LSL
Notes:
1. Distribution data sample size is 2000 samples taken from 3 di erent
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements were made on a characterization test board, which
represents a trade-o between optimal OIP3, gain and P1dB. Circuit
trace losses have not been de-embedded from measurements
above.
3
Electrical Speci cations [1]
TA = 25°C, Vdd =5V
Symbol Parameter and Test Condition Frequency Units Min. Typ. Max.
Ids Quiescent current N/A mA 83 100 117
Gain Gain 3.5 GHz
5 GHz
dB
8
11.8
8.8 10.3
OIP3 [2] Output Third Order Intercept Point 3.5 GHz
5 GHz
dBm
38
41.8
40 –
NF Noise Figure 3.5 GHz
5 GHz
dB
–
3.3
2.7 3.3
S11 Input Return Loss, 50Ω source 3.5 GHz
5 GHz
dB -12
-8.5
S22 Output Return Loss, 50Ω load 3.5 GHz
5 GHz
dB -10.5
-9.5
S12 Reverse Isolation 3.5 GHz
5 GHz
dB -25
-22
OP1dB Output Power at 1dB Gain Compression 3.5 GHz
5 GHz
dBm
24.5
24.5
25.7 –
Notes:
1. Measurements obtained using demo board described in Figure 30 and 31. 3.5GHz data was taken with 3GHz - 4GHz Application Test Circuit and
5GHz data with 4GHz - 6GHz Application Test Circuit respectively.
2. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -10dBm per tone measured at worse side band
3. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note (if applicable) for more details.
4
Typical Performance (2GHz - 3GHz)
TA = 25°C, Vdd = 5V, Input Signal = CW unless stated otherwise. Application Test Circuit is shown in Figure 30 and Table 1.
Figure 6. Ids over Temperature Figure 7. Gain over Frequency and Temperature
Figure 8. OIP3 over Frequency and Temperature Figure 9. P1dB over Frequency and Temperature
Figure 10. S11 over Frequency and Temperature Figure 11. S22 over Frequency and Temperature
70
80
90
100
110
120
130
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature (°C)
Ids (mA)
30
32
34
36
38
40
42
44
46
48
50
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
OIP3 (dBm)
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
S11 (dB)
5
6
7
8
9
10
11
12
13
14
15
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
Gain (dB)
85°C
25°C
-40°C
20
21
22
23
24
25
26
27
28
29
30
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
P1dB(dBm)
-25
-20
-15
-10
-5
0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
S22 (dB)
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
-25
-20
-15
-10
-5
0
5
Typical Performance (2GHz - 3GHz)
TA = 25°C, Vdd = 5V, Input Signal = CW unless stated otherwise. Application Test Circuit is shown in Figure 30 and Table 1.
Figure 12. S12 over Frequency and Temperature Figure 13. Noise Figure over Frequency and Temperature
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
NF(dB)
-35
-34
-33
-32
-31
-30
-29
-28
-27
-26
-25
-24
-23
-22
-21
-20
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
S12 (dB)
85°C
25°C
-40°C
85°C
25°C
-40°C
Typical Performance (3GHz - 4GHz)
TA = 25°C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 2.
Figure 14. Ids over Temperature Figure 15. Gain over Frequency and Temperature
Figure 16. OIP3 over Frequency and Temperature Figure 17. P1dB over Frequency and Temperature
70
80
90
100
110
120
130
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature (°C)
30
32
34
36
38
40
42
44
46
48
50
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
OIP3 (dBm)
5
6
7
8
9
10
11
12
13
14
15
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
Gain (dB)
20
21
22
23
24
27
26
25
28
29
30
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
P1dB(dBm)
Ids (mA)
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
6
Figure 18. S11 over Frequency and Temperature Figure 19. S22 over Frequency and Temperature
Typical Performance (3GHz - 4GHz)
TA = 25°C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 2.
Figure 20. S12 over Frequency and Temperature Figure 21. Noise Figure over Frequency and Temperature
-25
-20
-15
-10
-5
0
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
S11 (dB)
-25
-20
-15
-10
-5
0
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
S22 (dB)
-35
-32
-29
-26
-23
-20
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
S12 (dB)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
NF(dB)
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
Figure 22. Ids over Temperature Figure 23. Gain over Frequency and Temperature
Typical Performance (4GHz - 6GHz)
TA = 25°C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 3.
70
80
90
100
110
120
130
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature (°C)
Ids (mA)
5
6
7
8
9
10
11
12
13
14
15
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
Frequency (GHz)
Gain (dB)
85°C
25°C
-40°C
7
Figure 24. OIP3 over Frequency and Temperature Figure 25. P1dB over Frequency and Temperature
Figure 26. S11 over Frequency and Temperature Figure 27. S22 over Frequency and Temperature
Figure 28. S12 over Frequency and Temperature Figure 29. Noise Figure over Frequency and Temperature
Typical Performance (4GHz - 6GHz)
TA = 25°C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 3.
30
32
34
36
38
40
42
44
46
48
50
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
Frequency (GHz)
OIP3 (dBm)
-25
-20
-15
-10
-5
0
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
Frequency (GHz)
S11 (dB)
20
21
22
23
24
25
26
27
28
29
30
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
Frequency (GHz)
P1dB(dBm)
-25
-20
-15
-10
-5
0
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
Frequency (GHz)
S22 (dB)
-28
-26
-24
-22
-20
-18
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
Frequency (GHz)
S12 (dB)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
Frequency (GHz)
NF(dB)
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
85°C
25°C
-40°C
8
Application Schematic Components Table and Demo Board
Figure 30. Application Schematic
RFout
L1
Vdd
Vdd C8
C1 C3C2
Top View
C7C14
L4
L3
RFin 312RFin GND RFout
Figure 31. Demo board Layout
C14
– Recommended PCB material is 10 mils Rogers RO4350,
with FR4 backing for mechanical strength.
– Suggested component values may vary according to
layout and PCB material.
9
Demo board Part List
Table 1. 2GHz - 3GHz Application Schematic Components
Circuit Symbol Size Value Part Number Description
L1 0402CS 19nH 0402CS-19NX (CoilCraft) Wire Wound Chip Inductor
L3 NA
L4 0402 4.3nH 0402CS-4N3X (CoilCraft) Wire Wound Chip Inductor
C1 0402 100pF GRM1555C1H101JZ01 (Murata) Ceramic Chip Capacitor
C2 0402 0.1uF GRM155R71C104KA88D (Murata) Ceramic Chip Capacitor
C3 0805 2.2uF GRM21BR61E225KA12L (Murata) Ceramic Chip Capacitor
C7 0402 10pF GRM1555C1H100JZ01 (Murata) Ceramic Chip Capacitor
C8 0402 2.2pF GRM1555C1H2R2CA01 (Murata) Ceramic Chip Capacitor
C14 0402 1.2nH LL1005-FHL1N2 (Toko) MLC Inductor
Table 2. 3GHz - 4GHz Application Schematic Components
Circuit Symbol Size Value Part Number Description
L1 0603 4.7nH 0603CS-4N7X (CoilCraft) Wire Wound Chip Inductor
L3 NA
L4 0402 100nH LL1005-FHLR10J (Toko) MLC Inductor
C1 0402 100pF GRM1555C1H101JZ01B (Murata) Ceramic Chip Capacitor
C2 0402 0.1uF GRM155R71C104KA88D (Murata) Ceramic Chip Capacitor
C3 0805 2.2uF GRM21BR61E225KA12L (Murata) Ceramic Chip Capacitor
C7 0402 10pF GRM1555C1H100JA01 (Murata) Ceramic Chip Capacitor
C8 0402 5.6pF GRM1555C1H5R6CA01 (Murata) Ceramic Chip Capacitor
C14 NA
Table 3. 4GHz - 6GHz Application Schematic Components
Circuit Symbol Size Value Part Number Description
L1 0603 5.1nH LLQ1608-F5N1 (Toko) Wire Wound Chip Inductor
L3 0402 4.7nH LL1005-FHL4N7 (Toko) MLC Inductor
L4 NA
C1 0402 100pF GRM1555C1H101JZ01 (Murata) Ceramic Chip Capacitor
C2 0402 0.1uF GRM155R71C104KA88D (Murata) Ceramic Chip Capacitor
C3 0805 2.2uF GRM21BR61E225KA12L (Murata) Ceramic Chip Capacitor
C7 0402 2.2pF CM05CH2R2C50AH (Kyocera) Ceramic Chip Capacitor
C8 0402 2.2pF CM05CH2R2C50AH (Kyocera) Ceramic Chip Capacitor
C14 NA
10
Test Circuit for S-Parameter and Noise Parameter
Figure 32. S-parameter and Noise parameter test circuit
3
12
RFin GND Vdd
RFout
Top View
Port1 Port2 /
Bias Tee
11
Typical S-Parameter (Vdd = 5V, TA = 25°C, 50 ohm)
Freq (GHz)
S11
(dB)
S11
(ang)
S21
(dB)
S21
(ang)
S12
(dB)
S12
(ang)
S22
(dB)
S22
(ang)
0.1 -0.89 171.29 -63.15 137.09 -70.77 74.72 -6.40 178.55
0.5 -0.87 134.26 -56.43 159.75 -58.33 62.10 -7.78 155.81
1 -1.28 79.26 -21.10 165.63 -53.76 50.95 -12.61 144.22
1.5 -2.61 5.44 3.05 90.24 -40.55 11.02 -13.88 -157.29
2 -8.89 -48.46 13.14 -45.05 -30.39 -122.16 -7.87 155.45
2.2 -10.88 -75.15 13.54 -82.79 -29.06 -158.46 -8.29 148.89
2.4 -14.73 -111.10 13.66 -114.23 -27.99 172.79 -7.98 144.64
2.6 -20.58 -165.76 13.51 -141.52 -27.15 148.77 -7.42 139.09
2.8 -22.68 110.04 13.18 -165.17 -26.55 129.02 -7.02 133.06
3 -20.20 53.49 12.79 174.17 -26.01 112.23 -6.75 127.76
3.2 -18.95 13.54 12.36 155.70 -25.56 97.67 -6.59 123.30
3.4 -18.13 -25.72 11.96 138.97 -25.14 84.61 -6.50 119.81
3.6 -16.60 -63.19 11.55 123.41 -24.75 72.79 -6.39 116.90
3.8 -14.55 -93.60 11.13 108.88 -24.41 61.86 -6.31 113.70
4 -12.62 -116.51 10.71 95.32 -24.10 51.65 -6.27 110.52
4.2 -11.03 -134.23 10.30 82.60 -23.82 41.96 -6.30 106.60
4.4 -9.89 -148.50 9.90 70.48 -23.57 33.02 -6.43 102.28
4.6 -9.17 -160.67 9.54 59.03 -23.29 24.51 -6.60 97.08
4.8 -8.72 -172.00 9.23 48.03 -22.99 16.15 -6.84 91.25
5 -8.54 176.59 8.95 37.24 -22.69 7.90 -7.06 84.67
5.2 -8.98 162.84 8.82 25.05 -22.25 -1.75 -7.37 70.40
5.4 -8.89 149.06 8.51 14.69 -22.01 -9.74 -7.27 65.40
5.6 -8.89 134.06 8.20 4.48 -21.79 -17.80 -7.09 60.58
5.8 -8.87 117.54 7.91 -5.83 -21.60 -26.09 -6.89 55.99
6 -8.74 99.65 7.58 -16.09 -21.45 -34.31 -6.67 51.77
6.2 -8.36 81.31 7.21 -26.36 -21.36 -42.67 -6.38 47.34
6.4 -7.71 63.61 6.82 -36.57 -21.32 -51.08 -6.06 42.69
6.6 -6.88 47.92 6.38 -46.67 -21.35 -59.31 -5.73 37.79
6.8 -6.01 34.84 5.86 -56.40 -21.46 -67.30 -5.43 32.62
7 -5.21 24.24 5.32 -65.48 -21.59 -74.72 -5.16 27.32
8 -3.02 -3.41 3.00 -103.98 -22.10 -105.83 -4.71 -5.35
9 -2.59 -27.30 1.34 -139.80 -22.25 -135.66 -4.53 -43.08
10 -2.12 -67.56 -0.79 -177.42 -23.00 -168.17 -3.86 -73.44
11 -1.21 -103.01 -4.16 150.87 -25.17 164.20 -2.79 -92.66
12 -0.80 -117.86 -7.00 130.49 -26.95 146.68 -2.33 -103.81
13 -0.88 -131.07 -8.26 108.78 -27.28 127.48 -2.27 -121.44
14 -1.02 -151.35 -8.82 81.73 -26.93 103.00 -2.42 -146.67
15 -0.93 -174.30 -10.38 52.63 -27.48 77.03 -2.03 -177.32
16 -0.83 173.31 -12.04 36.30 -27.78 64.17 -1.57 173.29
17 -0.93 162.53 -12.15 20.39 -26.28 48.69 -1.69 161.95
18 -1.09 149.25 -11.95 2.84 -24.66 32.64 -1.62 149.85
19 -1.52 132.50 -10.69 -19.47 -22.19 10.57 -2.31 131.12
20 -1.75 111.66 -10.17 -46.41 -20.49 -16.89 -2.46 104.29
12
Part Number Ordering Information
Part Number No. of Devices Container
MGA-30789-BLKG 100 Antistatic Bag
MGA-30789-TR1G 3000 13” Tape/Reel
Typical Noise Parameters (Vdd = 5V, TA = 25°C, 50 ohm)
Freq (GHz) Fmin (dB) opt Mag opt Ang Rn/Z0
2.0 5.5 0.25 52 1.1
2.5 3.81 0.26 77 0.81
3.0 3.14 0.27 110 0.40
3.5 2.36 0.28 159 0.20
4.0 2.17 0.29 -163 0.19
4.5 2.28 0.30 -125 0.23
5.0 2.61 0.31 -97 0.38
5.5 2.68 0.32 -59 0.59
6.0 2.78 0.33 -27 0.53
SOT89 Package Dimensions
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES
SYMBOLS MIN NOM MAX MIN NOM MAX
A 1.40 1.50 1.60 0.055 0.059 0.063
L 0.89 1.04 1.20 0.0350 0.041 0.047
b 0.36 0.42 0.48 0.014 0.016 0.018
b1 0.41 0.47 0.53 0.016 0.018 0.030
C 0.38 0.40 0.43 0.014 0.015 0.017
D 4.40 4.50 4.60 0.173 0.177 0.181
D1 1.40 1.60 1.75 0.055 0.062 0.069
E 3.94 - 4.25 0.155 - 0.167
E1 2.40 2.50 2.60 0.094 0.098 0.102
e1 2.90 3.00 3.10 0.114 0.118 0.122
H 0.35 0.40 0.45 0.014 0.016 0.018
S 0.65 0.75 0.85 0.026 0.030 0.034
e 1.40 1.50 1.60 0.054 0.059 0.063
MATTE FINISH
POLISH
POLISH
D
D1
H
E1
E
L
b
e
e1S
C
b1 b
A
OR
13
Device Orientation
Tape Dimensions
DIMENSIONS IN MM
NOTES:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ±0.2
2. CAMBER IN COMPLIANCE WITH EIA 481
3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED
AS TRUE POSITION OF POCKET, NOT POCKET HOLE
12.0 ± .3
Ao = 4.60
Bo = 4.90
Ko = 1.90
5.50 ± .05
SEE NOTE 3
1.75 ± .10
8.00
Ø 1.5 +0.1/-0.0
2.00 ± .05 SEE NOTE 3
4.00 SEE NOTE 1
SECTION A - A
Ø 1.50 MIN.
Ao
KoR 0.3 TYP.
R 0.3 MAX.
0.30 ± .05
A
A
Bo
USER FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
7GX
7GX
7GX
7GX
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Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.
AV02-2249EN - August 1, 2012
Reel Dimensions – 13” Reel
Ø 20.2
MIN
2.0 ± 0.5
Ø 13.0 +0.5
-0.2
102.0
REF
330.0
REF
8.4
(MEASURED AT HUB)
(MEASURED AT HUB)
"A"
ATTENTION
Electrostatic Sensitive Devices
Safe Handling Required
MINNEAPOLIS USA
U.S PAT 4726534
R
LOKREEL R
11.1 MAX.
Detail "A"
Detail "B"
PS
6
6
PS
1.5
88 REF
96.5
+0.3
- 0.2
Dimensions in mm
