© 2007 IXYS All rights reserved 1 - 3
G
MLO 75
MMO 75
20070404a
IXYS reserves the right to change limits, test conditions and dimensions.
VRSM VRRM Type
VDSM VDRM
VV
1200 1200 MLO 75-12io1 MMO 75-12io1
1600 1600 MLO 75-16io1 MMO 75-16io1
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
Symbol Conditions Maximum Ratings
IRMS TK = 85°C, 50 - 400 Hz (for single controller) 86 A
ITRMS TVJ = TVJM 62 A
ITAVM TK = 85°C; (180° sine) 39 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1150 A
VR = 0 t = 8.3 ms (60 Hz), sine 1230 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1100 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 6600 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 6280 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 5000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 5020 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 150 A 100 A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.45 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tp = 30 µs 10 W
IT = ITAVM tp = 300 µs 5 W
PGAVM 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M3) 0.7 ± 0.1 Nm
(UNF 4-32) 6 ± 0.9 lb.in.
Weight typ. 15 g
Features
• Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
• Direct copper bonded Al2O3 -ceramic
base plate
• Isolation voltage 3600 V~
• Planar passivated chips
• UL registered, E 72873
• Long wire leads suitable for PC board
soldering
Applications
• Switching and control of single and
three phase AC
• Softstart AC motor controller
• Solid state switches
• Light and temperature control
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
IRMS = 86 A
VRRM = 1200-1600 V
AC Controller Modules
MLO
G1 K1
MMO
K2 G2
K2
G1 K1
MMO 75
K1 = Cathode 1, G1 = Gate 1
K2 = Cathode 2, G2 = Gate 2
(MLO 36 has no G2 lead)
G2 K1
K2 G1
© 2007 IXYS All rights reserved 2 - 3
G
MLO 75
MMO 75
20070404a
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM ≤5mA
VTIT= 100 A; TVJ = 25°C ≤1.4 V
VT0 For power-loss calculations only 0.85 V
rT5.0 mΩ
VGT VD = 6 V; TVJ = 25°C ≤1.5 V
TVJ = -40°C ≤1.6 V
IGT VD = 6 V; TVJ = 25°C ≤150 mA
TVJ = -40°C ≤200 mA
IGM tp = 50 µs, f = 60 Hz, IT = ITAVM 6A
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.25 V
IGD ≤5mA
ILTVJ = 25°C; tP = 10 µs, VD = 6 V ≤300 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM ≤2µs
IG = 0.45 A; diG/dt = 0.45 A/µs
tqTVJ = TVJM; IT = 50 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µs
VR = 100 V; dv/dt = 15 V/µs; VD = 2/3 VDRM
RthJC per thyristor/diode; DC current 0.55 K/W
per module 0.275 K/W
RthJK per thyristor/diode; DC current 0.75 K/W
per module 0.375 K/W
dSCreeping distance on surface 4.5 mm
dACreepage distance in air 4.5 mm
aMax. allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
MLO 75 MMO 75
1 10 100 1000
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IGD, TVJ = 125°C
4
2
1
56
10 100 1000
1
10
100
1000
μs
tgd
0.01 0.1 1 10
0
50
100
150
200
250
300
IRMS
TVJ = 125°C
TK = 85°C
TVJ = 25°C
typ. Limit
t
MMO 75
MLO 75
mA
s
A
IG
3
Fig. 2 Gate trigger delay time
Fig. 1 Gate trigger characteristics
Fig. 3 Rated RMS current versus
time (360° conduction)
© 2007 IXYS All rights reserved 3 - 3
G
MLO 75
MMO 75
20070404a
IXYS reserves the right to change limits, test conditions and dimensions.
1 10 100 1000
0
200
400
600
800
1000
0 20406080
0
30
60
90
120
150
180
210
240
270
300
330
0 25 50 75 100 125 150 110
1000
10000
0 25 50 75 100 125
0
10
20
30
40
50
60
70
0 20406080
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150 ms
I2t
A2s
°C
ITAVM
°C
A
0.001 0.01 0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
ms
t
A
ITSM
TA
°C
K/W
A
IRMS
A
W
VR = 0V
80 % VRRM
50 Hz
Circuit W1
1 x MMO 75
1 x MLO 75
Circuit W3
3 x MMO 75
3 x MLO 75
W
ZthJK
s
t
TA
IRMS
TK
t
Ptot
Ptot
0.3
0.9
1.2
1.5
3
6
RthKA K/W
0.1
0.3
0.4
0.5
1
2
RthKA K/W
200
300
180° sin
120°
60°
30°
DC
Fig. 5 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 7 I2t versus time (1-10 ms)
Fig. 9 Maximum on-state current vs.
heatsink temperature
Fig. 4 Load current capability for single phase AC controller
Fig. 6 Load current capability for three phase AC controller: 3xMMO 75/MLO 75
Fig. 8 Transient thermal impedance junction to heatsink
(per thyristor or diode)
Constants for
ZthJK calculation:
Rthi / (K/W) ti / (s)
0.019 0.004
0.034 0.02
0.498 0.16
0.2 0.68
30°
60°
120°
180°
DC
RthJK for various
conduction
angles d:
RthJK / (K/W) d :
0.751 DC
0.792 180°
0.813 120°
0.841 60°
0.86 30°
TVJ = 125°C
TVJ = 45°C
TVJ = 125°C
TVJ = 45°C
