2N3669 - Motorola / Freescale Semiconductor

SILICON CONTROLLED RECTIFIERS

These devices are designed for 12.5 Ampere RMS, 100 through

600 Volt power wpply and computer control applications to 10O°C

maximum Junction Temperature.

@Low Forward “On” Voltage –

VTM =1.8 Volts (Max) @TJ =25°C ,,::~,

,.,

@Al IDiffused Junctions for Greater Parameter Uniformity ~,$?..4:

.:/[,

,:~ ‘.*

2N4103 ~1:$““” I600

,,y\fl*,:i.,,,~r,,.

Peak Forward Gate Voltage ,, 5

$% VGF 10 volts

Paak Revarsa Gate Voltage ..\s*>.3.‘:::**!

,fi,: *t,VG R5.0 volts

t,,

Forward Current RMS (Tq,~ 80&~> IT(RMS) 12.5 Amps

(All Conduction An~~~,$a’ .,

,~+.++,

Peak Forward Surge,:~<&t”’ ITSM 200 Amps

(1/2 cycle, Si~,~v~@O Hz,

T. I=–40 t~<l -~

CircuitFus~’9Cg~%derations 12~ 166 A2s

(TJ,,@!@4~$I@~+1000C,t=1.0 to 8.3 ms)

Fo,~ar~;~~e~~ Gate Power PGM 5,0 Watts

For~$~Average Gate Powar PG(AV) 0.5 Watt

Forward Peak Gate Current IGM 2.0 Amos

Operating Junction Temperature Range TJ –40 to+100 Oc

Storage Temperature Range Ten 40 to +125 o~

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case ReJC 1.7 Ocm

(1]VR ~M for all ~ypes can be applied on acontinuous dc basis without incurrent damage.

Ratings apply for zero or negative gate voltage. Devices should not be tadtad for blocking

capability in emanner such that the voltage supplied exceeds the reted blocking voltage.

●Indicates JEDEC Ragietered Data.

.~~y+ rAB c

~’K D

SEAnNG PLANE

STYLE 2: (THY)

PIN 1. GATE

2. CATHODE

CASE: ANODE

CASEW05

MOTOROLA INC., 1976 DS 658:

;LECTR ICAL CHARACTERISTICS (Tc =25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

‘Peek F~rward.810cking Voltage VDRM volts

(TJ =100°C) 2N3668 100 —

2N3669 200 ——

2N3670 400 —

2N4103 600 ——

‘Peak Forward 810cking Current IDRM mA ~W.k~If}l

(Rated VDRM @TJ =100°C)

2N3668 — — 2.0 “‘.k~>,~J..<\i

,.>i:’6 \.:\i+

2N3669 — — 2.5 ~**$>

2N3670 3.0 ~:!.,.,.

— — ?~:,~~~

,.i~,.\}:+,..c,

2N4103 —4.0 ,* i~??~~)j:g‘3

*Peak :Reversa 810cking Current IRRM ,,, ,, .,.,x,

~s:,,“>:$*’

Iflated V,RRM’@ TJ =10O°C) 2N3668 —i$~%~,,~ ~‘A

2N3669 ?‘++q.$~

2N3670 .f,

*.. .4’ C5

2N4103 ~:,~~i!:,,{,~.

—“~~ ‘k’ 2!0

—‘,$’c$j.\~,;..

.$$

*Forward “On” Voltage (1) VTM ,.:> ,.’ ,.

~,,.j

,.,, ,..{, ,p,> 1.8 volts

(ITM =25 Apeak) .:J>\>\:bs

~i.kli~,~~<

.i::1*!!~3*).!,;,,

*Gate Trigger Current (Continuous dc) (TJ =25°C) .....

IGT Y,:,+*_

. . 40 mA

(Anode Voltage =12 Vdc, RL=24 Ohms) (TJ =–40°C)* ,~:’~~*;!

—::it,~>~..i-:,,‘!....’ —80

*Gate Triggar Voltage (Continuous dc)” VGT 5““:$“t+’

$volts

(Anode Voltaga =12 vdc, RL=24 Ohms) (TJ =–40°C) ●)\)~\

~“,, ~~.w~.’ 1.0 3.0

(TJ =+25°C) .’,$\,;**.

\,.i,, ——2.0

(TJ =+lOO°C) ~~t\e: ‘$ 0.3

~’‘it<\

Holding Current :f*%$,: “’a –20 mA

(Anode Voltege =12 Vdc) :,:+ .,$

‘~$.,,.*$

‘+>k‘<..,...

Turn-On Time “i@%*.@ 0.5 #s

Turn-Off Time (VDRM =rated voltage) “.. tq —50

,.~, .:i$ Us

Forward Voltage Application Rate .,!

*...fi$,$,>.:, dvldt —30 VIPS

$.$,. *ed

look ,. ... ,,.

I.. t.{,), .I I I I I1I I 1120 I11# 12 I I 111!11 1 f

>11111111111 IIdcl I

-“111111111’ 111111 :‘“~a=co;:~k~::E~

OuI1,11 1 1 1 1 1 11I1I11111111I1I I I 1

02.0 4.0 6,0 8.0 10 12 14 oo~ 2.0 4.0 6.0 8,0 10 12 14

IT(AV],AVERAGE FORWARDCURRENT(AMP) IT(AV), AVERAGE FORWARDCURRENT(AMP)

(Mj ,.

—MOTOROLA Sem;conduc~or Produces Inc. —