2N6659, 2N6659-2
www.vishay.com Vishay Siliconix
S12-0591-Rev. A, 19-Mar-12 1Document Number: 63868
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 35 V (D-S) MOSFET
FEATURES
• Military Qualified
• Low On-Resistence: 1.3
• Low Threshold: 1.7 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 8 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
•Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
•Solid-State Relays
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
PRODUCT SUMMARY
VDS (V) 35
RDS(on) () at VGS = 10 V 1.8
Configuration Single
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
ORDERING INFORMATION
PART PACKAGE DESCRIPTION/DSCC
PART NUMBER
VISHAY ORDERING
PART NUMBER
2N6659 TO-205AD
(TO-39)
Commercial 2N6659
Commercial, Lead (Pb)-free 2N6659-E3
2N6659-2 See -2 Flow Document 2N6659-2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 35 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID
1.4
A
TC = 100 °C 1
Pulsed Drain CurrentaIDM 3
Maximum Power Dissipation TC = 25 °C PD
6.25 W
TC = 100 °C 2.5
Thermal Resistance, Junction-to-Ambientb RthJA 170 °C/W
Thermal Resistance, Junction-to-Case RthJC 20
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
2N6659, 2N6659-2
www.vishay.com Vishay Siliconix
S12-0591-Rev. A, 19-Mar-12 2Document Number: 63868
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 μs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNIT MIN. TYP.aMAX.
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 10 μA 35 75 - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 0.8 1.7 2
Gate-Body Leakage IGSS VGS = ± 15 V VDS = 0 V - - ± 100 nA
TC = 125 °C - - ± 500
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 35 V - - 10 μA
VDS = 28 V TC = 125 °C - - 500
On-State Drain Current ID(on) V
GS = 10 V VDS = 10 V 1.5 3 - A
Drain-Source On-State ResistancebRDS(on)
VGS = 5 V ID = 0.3 A - 2 5
VGS = 10 V ID = 1 A - 1.3 1.8
TC = 125 °C - 2.4 3.6
Forward Transconductancebgfs VDS = 7.5 V, ID = 0.525 A 170 350 - mS
Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V - 0.8 - V
Dynamic
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
-3550
pF
Output Capacitance Coss -2540
Reverse Transfer Capacitance Crss -710
Drain-Source Capacitance Cds -3040
Switchingc
Turn-On Time tON VDD = 25 V, RL = 23
ID 1 A, VGEN = 10 V, Rg = 25
-810
ns
Turn-Off Time tOFF -8.510
2N6659, 2N6659-2
www.vishay.com Vishay Siliconix
S12-0591-Rev. A, 19-Mar-12 3Document Number: 63868
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Ohmic Region Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Output Characteristics for Low Gate Drive
On-Resistance vs. Gate-to-Source Voltage
Normalized On-Resistance vs. Junction Temperature
VDS -)V( egatloV ecruoS-ot-niarD
2.0
0123 45
1.6
1.2
0.8
0.4
0
VGS = 10 V 8 V
7 V
6 V
5 V
4 V
3 V
2 V
ID- Drain Current (A)
VGS -)V( egatloV ecruoS-etaG
1.0
0.8
0.6
0
0120
0.4
0.2
468
125 °C
25 °C
VDS = 15 V
TJ = - 55 °C
ID- Drain Current (A)
2.5
2.0
1.5
0
0.24.00
1.0
0.5
0.8 1.2 1.6
VGS = 10 V
RDS(on) - Drain-Source On-Resistance (Ω)
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2.0 V
100
0 0.4 0.8 1.2 1.6 2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
VGS = 10 V
1.8 V
ID- Drain Current (mA)
VGS - Gate-Source Voltage (V)
2.8
048121620
2.4
2.0
1.6
0
1.2
0.8
0.4
1.0 A
0.5 A
ID = 0.1 A
RDS(on) - On-Resistance (Ω)
TJ- Junction Temperature (°C)
2.25
2.00
1.75
0.50
-50 - 05101
1.50
1.25
30 70 110
1.00
0.75
VGS = 10 V
ID= 1.0 A
0.2 A
RDS(on) - Drain-Source On-Resistance (Normalized)
2N6659, 2N6659-2
www.vishay.com Vishay Siliconix
S12-0591-Rev. A, 19-Mar-12 4Document Number: 63868
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Threshold Region
Gate Charge
Capacitance
Load Condition Effects on Switching
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70223.
VGS - Gate-to-Source Voltage (V)
10
1
0.01
0.5
0.1
1.0 1.5 2.0
VDS = 5 V
25 °C
- 55 °C
125 °C
TJ= 150 °C
ID- Drain Current (mA)
Qg- Total Gate Charge (pC)
15.0
12.5
10.0
00060010
7.5
5.0
200 300 400
2.5
500
ID= 1.0 A
VDS = 30 V
48 V
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Coss
120
100
80
0
05010
60
40
20 30 40
20
Ciss
Crss
VGS = 0 V
f = 1 MHz
C- Capacitance (pF)
ID- Drain Current (A)
0111.0
100
10
1
50
20
5
2
VDD = 25 V
Rg = 25 Ω
VGS = 0 V to 10 V
td(off)
tr
td(on)
tf
t- Switching Time (ns)
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Revision: 02-Oct-12 1Document Number: 91000
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