VISHAY
BAW56
Document Number 85549
Rev. 1.6, 09-Jul-04
Vishay Semiconductors
www.vishay.com
1
17033
12
3
1
2
3
Small Signal Switching Diode, Dual
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common anode
• This diode is also available in other configurations
including: a single with type designation BAL99, a
dual anode to cathode with type designation
BAV99, and a dual common cathode with type
designation BAV70.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout
Part Ordering code Marking Remarks
BAW56 BAW56-GS18 or BAW56-GS08 JD Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
VR, VRM 70 V
Forward current ( continous) IF250 mA
Non repetitive peak forward
current
tp = 1 µsI
FSM 2.0 A
tp = 1 ms IFSM 1.0 A
tp = 1 s IFSM 0.5 A
Power dissipation Pdiss 3501) mW
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Document Number 85549
Rev. 1.6, 09-Jul-04
VISHAY
BAW56
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambiant air
RthJA 430 °C/W
Junction temperature TJ150 °C
Storage temperature range TS- 65 to + 150 °C
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 1 mA VF0.715 V
IF = 10 mA VF0.855 V
IF = 50 mA VF1.0 V
IF = 150 mA VF1.25 V
Reverse current VR = 70 V IR2.5 µA
VR = 70 V, Tj = 150 °C IR100 µA
VR = 25 V, Tj = 150 °C IR30 µA
Diode capacitance VF = VR = 0, f = 1 MHz Ctot 2pF
Reverse recovery time IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr 6ns
Figure 1. Forward Current vs. Forward Voltage
I - Forward Current ( mA )
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
- Forward Voltage(V)
14356
F
= 100T°C
j
125°C
VISHAY
BAW56
Document Number 85549
Rev. 1.6, 09-Jul-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
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Document Number 85549
Rev. 1.6, 09-Jul-04
VISHAY
BAW56
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
