©2000 Fairchild Semiconductor International Rev. B, February 2000
TIP145T/146T/147T
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unle s s othe r wise note d
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP145T
: TIP146T
: TIP147T
- 60
- 80
- 100
V
V
V
VCEO
Collector-Emitter Voltage : TIP145T
: TIP146T
: TIP147T
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base V oltage - 5 V
IC Collector Current (DC) - 10 A
ICP Collector Current (Pulse) - 15 A
IB Base Current (DC) - 0.5 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Param e ter Test Condit ion Min. Typ. Max. U nits
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP145T
: TIP146T
: TIP147T
IC = - 30mA, IB = 0
- 60
- 80
- 100
V
V
V
ICEO Collector Cut-off Current : TIP145T
: TIP146T
: TIP147T
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 2
- 2
- 2
mA
mA
mA
ICBO Collector Cut-off Current : TIP145T
: TIP146T
: TIP147T
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 1
- 1
- 1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA
hFE DC Current Gain VCE = - 4V, IC = - 5A
VCE = - 4V, IC = - 10A 1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA - 2
- 3 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V
VBE(on) Base-Emitter ON Voltage VCE = - 4V, IC = - 10A - 3 V
tD Delay Time VCC = - 30V, IC = - 5A
IB1 = -20mA, IB2 = 20mA
RL = 6Ω
0.15 µs
tR Rise Time 0.55 µs
tSTG St orage Time 2.5 µs
tF Fa ll Time 2.5 µs
TIP145T/146T/147T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.)
• Industrial Use
• Complement to TIP140T/141T/142T
1.Base 2.Collector 3.Emitter
TO-220
1
Equivalent Circuit
B
E
C
R1 R2
Ω≅
Ω≅
©2000 Fairchild Semiconductor International
TIP145T/146T/147T
Rev. B, February 2000
Typical Characteristics
©2000 Fairchild Semiconductor International Rev. B, February 2000
TIP145T/146T/147T
Package Dimensions
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
©2000 Fairchild Semiconductor International Rev. A, January 2000
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Design This datasheet contains the design specifications for
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