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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
FMMT4124 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM： 0.33W（Tamb=25℃）
Collector current
I
CM：0.2A
Collector-base voltage
V
(BR) CBO： 30V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=10μA， IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA， IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 10μA， IC=0 5 V
Collector cut-off current I
CBO VCB= 20 V , I
E=0 0.05 μA
Emitter cut-off current IEBO VEB= 3V , IC=0 0.05 μA
DC current gain HFE VCE= 1V, I
C= 2mA 120 360
Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=50 mA, IB= 5mA 0.95 V
Transition frequency f
T VCE=20V, IC= 10mA
f =100MHz 300 MHz
Marking FMMT4124： 2C
Unit : mm
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
