JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR NPN SOT--23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM 0.33WTamb=25 Collector current ICM0.2A Collector-base voltage V (BR) CBO 30V Operating and storage junction temperature range T J T stg: -55 to +150 Unit : mm ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol unless Test otherwise conditions Collector-base breakdown voltage V(BR)CBO Ic=10A Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT 30 V Ic= 1mA IB=0 25 V V(BR)EBO IE= 10A IC=0 5 V Collector cut-off current ICBO VCB= 20 V , IE=0 0.05 A Emitter cut-off current IEBO VEB= 3V , 0.05 A DC current gain HFE IE=0 specified IC=0 VCE= 1V, IC= 2mA 120 360 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50 mA, IB= 5mA 0.95 V fT Transition frequency Marking FMMT4124 2C VCE=20V, IC= 10mA f =100MHz 300 MHz