BC858BF - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Preliminary speciﬁcation

Supersedes data of 1998 Nov 10 1999 May 21

DISCRETE SEMICONDUCTORS

BC856F; BC857F; BC858F series

PNP general purpose transistors

M3D425

1999 May 21 2

Philips Semiconductors Preliminary speciﬁcation

PNP general purpose transistors BC856F; BC857F; BC858F series

FEATURES

•Power dissipation comparable to SOT23

•Low current (max. 100 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switching and amplification especially

in portable equipment.

DESCRIPTION

PNP transistor encapsulated in an ultra small SC-89

(SOT490) plastic SMD package.

NPN complements: BC846F, BC847F and BC848F series.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Fig.1 Simplified outline (SC-89; SOT490) and

symbol.

handbook, halfpage

MAM411

Top view

MARKING

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

BC856AF 3A BC857CF 3G

BC856BF 3B BC858AF 3J

BC857AF 3E BC858BF 3K

BC857BF 3F BC858CF 3L

1999 May 21 3

Philips Semiconductors Preliminary speciﬁcation

PNP general purpose transistors BC856F; BC857F; BC858F series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC856AF; BC856BF −−80 V

BC857AF; BC857BF; BC857CF −−50 V

BC858AF; BC858BF; BC858CF −−30 V

VCEO collector-emitter voltage open base

BC856AF; BC856BF −−65

BC857AF; BC857BF; BC857CF −−45

BC858AF; BC858BF; BC858CF −−30

VEBO emitter-base voltage open collector −−5V

Ccollector current (DC) −−100 mA

ICM peak collector current −−200 mA

IBM peak base current −−100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 May 21 4

Philips Semiconductors Preliminary speciﬁcation

PNP general purpose transistors BC856F; BC857F; BC858F series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =−30 V −−15 nA

IE= 0; VCB =−30 V; Tj= 150 °C−−5µA

EBO emitter cut-off current IC= 0; VEB =−5V −−100 nA

hFE DC current gain IC=−2 mA; VCE =−5V

BC856AF; BC857AF; BC858AF 125 250

BC856BF; BC857BF; BC858BF 220 475

BC857CF; BC858CF 420 800

VCEsat collector-emitter saturation voltage IC=−10 mA; IB=−0.5 mA −−200 mV

IC=−100 mA; IB=−5 mA; note 1 −−400 mV

VBE base-emitter voltage IC=−2 mA; VCE =−5V −600 −750 mV

IC=−10 mA; VCE =−5V −−820 mV

Cccollector capacitance IE=i

e= 0; VCB =−10 V; f = 1 MHz −2.5 pF

fTtransition frequency IC=−10 mA; VCE =−5 V; f = 100 MHz 100 −MHz

F noise ﬁgure IC=−200 µA; VCE =−5 V; RS=2kΩ;

f = 1 kHz; B = 220 Hz −10 dB

1999 May 21 5

Philips Semiconductors Preliminary speciﬁcation

PNP general purpose transistors BC856F; BC857F; BC858F series

PACKAGE OUTLINE

UNIT bpcDE e1HELpwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

98-10-23

IEC JEDEC EIAJ

mm 0.33

0.23 0.2

0.1 1.7

1.5 0.95

0.75 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.5

0.3

SOT490 SC-89

detail X

vMA

0 1 2 mm

scale

0.8

0.6

Plastic surface mounted package; 3 leads SOT490

1999 May 21 6

Philips Semiconductors Preliminary speciﬁcation

PNP general purpose transistors BC856F; BC857F; BC858F series

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 May 21 7

Philips Semiconductors Preliminary speciﬁcation

PNP general purpose transistors BC856F; BC857F; BC858F series

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999 65

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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 May 21 Document order number: 9397 750 05848