PFMControlled,Step‐UpDC/DCConverters(DutyRatio58%)
Series
475
4
■GeneralDescription ■Features
■Applications
■TypicalApplicationCircuit ■TypicalPerformance
Characteristic
◆Duty 58%
◆CMOS Low Power Consumption
◆Operating Voltage : 0.9V~10.0V
◆Output Voltage Range : 2.0V~7.0V
◆Output Voltage Accuracy: ±2.5%
The XC6381 series is a group of PFM controlled step-up DC/DC
converters.
The XC6381 series employs CMOS process and laser trimming
technologies so as to attain low power and high accuracy.
Max. oscillator frequency is trimmed to 155kHz (accuracy: ±15%).
Every built-in switching transistor type enables a step-up circuit to be
configured using only three external components ; a coil, a diode, and a
capacitor. External transistor versions are available to accommodate
high output current applications.
Both built-in and external transistor types include 5-pin and 3-pin
packages, which are provided with either a CE (chip enable) function that
reduces power consumption during shut-down mode, or a VDD pin
function (separated power and voltage detect pins).
SOT-23, SOT-25, and SOT-89-5 super mini-mold packages.
Operating (start-up) voltage range
: 0.9V~10V
Output voltage range : 2.0V~7.0V in 0.1V increments
Highly accurate : Set-up voltage ±2.5%
Maximum oscillator frequency
: 155kHz (±15%)
Duty Ratio : 58% (±5%)
Both built-in switching transistor and external types are
available
Five-lead packaged units offer either Chip Enable or
independent VOUT pin option.
Small package : SOT-23, 25 mini-mold (3-pin, 5-pin)
SOT-89, 89-5 mini-power mold
(3-pin, 5-pin)
●Cellular phones, pagers
●Palmtops
●Cameras, video recorders
●Portable equipment
SOT-23
(TOPVIEW)
VOUT
SD
21
3
GND
CL
（Tantalum）
L
VIN CIN
XC6381A301
L=100μH,C=47μF（Tantalum）
100
80
60
40
20
00 20406080100
OutputCurrent:IOUT（mA）
Efficiency:EFFI（％）
0.9V 1.2V 1.5V 1.8V
VIN=2.0V
04S08XC6381 02.09.12 14:52 ページ475
XC6381Series
476
4
■PinConfiguration
■PinAssignment
12
SOT-23
(TOPVIEW)
3
13
SOT-25
(TOPVIEW)
5 4
2
SOT-89
(TOPVIEW)
123
SOT-89-5
(TOPVIEW)
123
45
PINNUMBER
（XC6381A）
XC6381A
1
3
2
PINNAME FUNCTION
VSS
VOUT
LX
Ground
Outputvoltagemonitor,ICinternalpowersupply
Switch
SOT-23
SOT-89
1
2
3
PINNUMBER
（XC6381C）
XC6381C
4
2
5
PINNAME FUNCTION
VSS
VOUT
LX
Ground
Outputvoltagemonitor,ICinternalpowersupply
Switch
1
3
CE Chipenable
NC Noconnection
5
2
4
3
1
SOT-25
SOT-89-5
PINNUMBER
（XC6381E）
XC6381E PINNAME FUNCTION
VSS
VDD
LX
Ground
ICinternalpowersupply
Switch
VOUT Outputvoltagemonitor
NC Noconnection
4
2
5
1
3
5
2
4
3
1
SOT-25
SOT-89-5
04S08XC6381 02.09.12 14:52 ページ476
XC6381
Series
477
4
■ProductClassification
●Selection Guide
●Ordering Information
PART TYPE PACKAGE FEATURES
XC6381A SOT-23,
SOT-89
SOT-25,
SOT-89-5
SOT-25,
SOT-89-5
•
Accommodates a duty ratio of 58%.
XC6381C
•
Stand-by (CE) function added version to the
XC6381A.
•
Stand-by current: 0.5µA max.
XC6381E
•
Independent power supply and set-up voltage
sensing leads allow designing of PFM controllers.
ADDITIONAL
FUNCTION
Chip enable(CE)
–
Separated
"V
DD
" and "V
OUT
" leads
DUTY
RATIO
58%
58%
58%
SWITCHING
RELATED
Built-in Transistor
"Lx" lead
Built-in Transistor
"Lx" lead
Built-in Transistor
"Lx" lead
P
R
L
A
C
E
1
3-pin. Built-in switching transistor
Stand-by capability. (5-pin) Built-in switching transistor
Separated V
DD
and V
OUT
. (5-pin) Built-in switching transistor
Maximum Oscillator Frequency 155kHz
Output Voltage
e.g.V
OUT
=3.5V
➔ w
=3,
e
=5
MPackage
q
=A~B SOT-23
q
=C~F SOT-25
Package
q
=A~B SOT-89
q
=C~F SOT-89-5
Embossed tape : Standard Feed
Embossed tape : Reverse Feed
XC6381 Series PFM Controlled Duty 58%
XC6381qwerty
q
w
e
r
t
y
04S08XC6381 02.09.12 14:52 ページ477
XC6381Series
478
4
■PackagingInformation
●SOT-23
●SOT-25
1.1±0.1
0〜0.1
0.15
（0.95）
1.9±0.2
2.9±0.2
0.2min
2.8±0.2
+0.1
-0.05
0.4 +0.1
-0.05
1.6 +0.2
-0.1
0.4
（0.95）
1.9±0.2
2.9±0.2
+0.1
-0.05
1.1±0.1
0〜0.1
0.15
0.2min
+0.1
-0.05
2.8±0.2
1.6 +0.2
-0.1
04S08XC6381 02.09.12 14:52 ページ478
XC6381
Series
479
4
●SOT-89
●SOT-89-5
0.42±0.06
0.42±0.06 0.42±0.06
1.5±0.1
0.8min0.8min
4.5max
2.5±0.1
（0.4）
0.42±0.06 0.4
0.42±0.06
0.47±0.06
4.5±0.1
1.5±0.1 1.5±0.1
+0.03
-0.02
1.6 +0.15
-0.2
04S08XC6381 02.09.12 14:52 ページ479
XC6381Series
480
4
SOT-89
(TOPVIEW)
q
w
e
r
2
1
4
3
SOT-89-5
(TOPVIEW)
■Marking
SOT-23
(TOPVIEW)
qwer
SOT-25
(TOPVIEW)
qwer
wRepresentstheintegeroftheOutputVoltageandOscillatorFrequency
1
155
OSCILLATORFREQUENCY（kHz）
INTEGEROFTHE
OUTPUTVOLTAGE
1
5
4
3
2
rDenotestheproductionlotnumber
0to9,AtoZrepeated(G.I.J.O.Q.Wexcepted)
2
3
4
5
66
eRepresentsthedecimalnumberoftheOutputVoltageandOscillatorFrequency
155
OSCILLATORFREQUENCY（kHz）
OUTPUTVOLTAGE
0
9
8
7
6
1
5
4
3
2
0
9
8
7
6
1
5
4
3
2
qRepresentstheProductClassification
FUNCTION
Y
C
C
DESIGNATOR
−
CE
VDD/VIN
PRODUCTNAME
XC6381A＊＊＊＊＊
XC6381C＊＊＊＊＊
XC6381E＊＊＊＊＊
Built-inTransistor
Built-inTransistor
Built-inTransistor
04S08XC6381 02.09.12 14:52 ページ480
XC6381
Series
481
4
PFMControlOSC
155kHz
Buffer
VLxlimiter Vref
VDD
ChipEnable
CE
+
−
●
XC6381A, XC6381C (V
OUT
pin can also be used for V
DD
pin.)
PFMControlOSC
155kHz
Buffer
VLxlimiter Vref
VDD
+
−
●XC6381E
Lx
VSS
VOUT
VOUT
Lx
VSS
VDD
Built-in Tr types use the Lx pin, external Tr types use the EXT pin.
The CE pin is only used with the XC6381C.
Note:
The V
DD
pin is only used with the XC6381E.
Built-in Tr types use the Lx pin, external Tr types use the EXT pin.
Note:
■BlockDiagram
PARAMETER SYMBOL RATINGS UNITS
V
OUT
Input Voltage V
OUT
12 V
Lx pin Voltage V
LX
12 V
Lx pin Current I
LX
400 mA
EXT pin Voltage V
EXT
V
SS
–0.3~V
OUT
+0.3 V
EXT pin Current I
EXT
±50 mA
CE Input Voltage V
CE
12 V
V
DD
Input Voltage V
DD
12 V
Continuous Total SOT-23
SOT-89
150
Power Dissipation P
D
500 mW
Operating Ambient Temperature T
opr
–30~+80 °C
Storage Temperature T
stg
–40~+125 °C
Ta=25°C
■AbsoluteMaximumRatings
04S08XC6381 02.09.12 14:52 ページ481
XC6381Series
482
4
XC6381A501
Ta=25°C
V
OUT
=5.0V
PARAMETER
Output Voltage
Maximum Input Voltage
SYMBOL
V
OUT
L,SD,C
L
, etc. connected
V
IN
CONDITIONS MIN
4.875
10
Oscillation Start-up Voltage V
ST
I
OUT
=1mA
Oscillation Hold Voltage V
HLD
I
OUT
=1mA 0.70
No-Load Input Current I
IN
I
OUT
=0mA,(Note1)
Supply Current 1 (Note 2) I
DD
1V
IN
=V
OUT ✕
0.95
Supply Current 2 I
DD
2V
IN
=V
OUT
+0.5V
Lx Switch On-Resistance R
SWON
Same as I
DD
1, V
LX
=0.4V
Lx Leakage Current I
LXL
No external components, V
OUT
=V
LX
=10V
Duty Ratio DTY Same as I
DD
1
Measuring of Lx waveform 53
Maximum Oscillation Frequency MAXF
OSC
Same as I
DD
1, 58% duty.
Same as I
DD
1, Fosc≥MAXF
OSC
✕
2
131.75
Lx Limit Voltage VLxLMT 0.7
MAX
5.125
0.90
10.6
95.7
4.8
4.3
1.0
63
178.25
1.1
Efficiency EFFI L,SD,C
L
, etc. connected
TYP
5.000
0.80
5.3
47.8
2.4
2.8
58
155
85
UNITS
V
V
V
µA
µA
µA
Ω
µA
%
kHz
V
%
V
Measuring conditions: Unless otherwise specified, V
IN
=V
OUT
✕
0.6, I
OUT
=50mA. See Typical application circuits, Fig.1.
1. The Schottky diode (SD) must be type MA735, with reverse current (I
R
) <1.0µA at reverse voltage (V
R
)=10.0V.
2. "Supply current 1" is the supply current while the oscillator is continuously oscillating. In actual operation the oscillator periodically operates,
which results in less average power consumption. The current actually provided by an external V
IN
source is represented by "No-Load Input
Current (I
IN
)".
Note
:
XC6381A301
Ta=25°CV
OUT
=3.0V
PARAMETER
Output Voltage
Maximum Input Voltage
SYMBOL
V
OUT
L,SD,C
L
, etc. connected
V
IN
CONDITIONS MIN
2.925
10
TYP
3.000
MAX
3.075
UNITS
V
Oscillation Start-up Voltage V
ST
I
OUT
=1mA 0.80 0.90 V
Oscillation Hold Voltage V
HLD
I
OUT
=1mA 0.70 V
No-Load Input Current I
IN
I
OUT
=0mA,(Note1) 4.6 9.3 µA
Supply Current 1 (Note 2) I
DD
1V
IN
=V
OUT ✕
0.95 29.3 58.7 µA
Supply Current 2 I
DD
2V
IN
=V
OUT
+0.5V 2.1 4.2 µA
Lx Switch On-Resistance R
SWON
Same as I
DD
1, V
LX
=0.4V 5.2 7.9 Ω
Lx Leakage Current I
LXL
No external components, V
OUT
=V
LX
=10V 1.0 µA
Duty Ratio DTY Same as I
DD
1
Measuring of Lx waveform 53 58 63 %
Maximum Oscillation Frequency MAXF
OSC
Same as I
DD
1, 58% duty. 131.75 155 178.25 kHz
Lx Limit Voltage VLxLMT Same as I
DD
1, Fosc ≥MAXF
OSC
✕
20.7 1.1 V
Efficiency EFFI L,SD,C
L
, etc. connected 80 %
V
Measuring conditions: Unless otherwise specified, V
IN
=V
OUT
✕
0.6, I
OUT
= 30mA. See Typical application circuits, Fig.1.
1. The Schottky diode (SD) must be type MA735, with reverse current (I
R
) <1.0µA at reverse voltage (V
R
)=10.0V.
2. "Supply current 1" is the supply current while the oscillator is continuously oscillating. In actual operation the oscillator periodically operates,
which results in less average power consumption. The current actually provided by an external V
IN
source is represented by "No-Load Input
Current (I
IN
)".
Note
:
■ElectricalCharacteristics
04S08XC6381 02.09.12 14:52 ページ482
XC6381C501MR Ta=25°C V
OUT
=5.0V
PARAMETER
Output Voltage
Maximum Input Voltage
SYMBOL
L,SD,C
L
etc. connected
CONDITIONS
Oscillation Start-up Voltage I
OUT
=1mA
Oscillation Hold Voltage I
OUT
=1mA
No-Load Input Current I
OUT
=0mA(Note1)
Supply Current 1 (Note 2) V
IN
=V
OUT ✕
0.95
Supply Current 2 V
IN
=V
OUT
+0.5V
Lx Switch-On Resistance Same as I
DD
1. V
LX
=0.4V.
Lx Leakage Current No external components. V
OUT
=V
LX
=10V.
Duty Ratio Same as I
DD
1.
Measuring of L
X
waveform.
Maximum Oscillation Frequency Same as I
DD
1. 58% duty.
Stand-by Current Same as I
DD
1.
CE "High" Voltage Same as I
DD
1.
Existence of Lx Oscillation.
Same as I
DD
1.
Disapperance of Lx Oscillation.
CE "Low" Voltage
CE "High" Current Same as I
DD
1. V
CE
=V
OUT ✕
0.95.
CE "Low" Current Same as I
DD
1. V
CE
=0V.
Same as I
DD
1. F
OSC
>MAXF
OSC ✕
2
Lx Limit Voltage
Efficiency L,SD,C
L
etc. connected
Measuring conditions: Unless otherwise specified, connect CE to V
OUT
, V
IN
=V
OUT ✕
0.6, I
OUT
=50mA. See Typical Application Circuits, Fig.2.
1. The Schottky diode (SD) must be type MA735, with reverse current (I
R
)<1.0µA at reverse voltage (V
R
)=10.0V
2. "Supply Current 1" is the supply current while the oscillator is continuously oscillating. In actual operation the oscillator periodically operates
which results in less average power consumption. The current actually provided by an external V
IN
source is represented by "No-Load Input
Current (I
IN
)".
Note
:
V
OUT
V
IN
MIN
4.875
10
V
ST
V
HLD
0.70
I
IN
I
DD
1
I
DD
2
R
SWON
I
LXL
DTY 53
MAXF
OSC
131.75
MAX
5.125
0.90
10.6
95.7
4.8
4.3
1.0
63
178.25
TYP
5.000
0.80
5.3
47.8
2.4
2.8
58
155
UNITS
V
V
V
µA
µA
µA
Ω
µA
%
kHz
I
STB
0.5 µA
V
CEH
0.75 V
V
CEL
0.20 V
I
CEH
0.25 µA
I
CEL
–0.25 µA
VLxLMT 0.7 1.1 V
EFFI 85 %
V
XC6381C301MR Ta=25°C V
OUT
=3.0V
PARAMETER
Output Voltage
Maximum Input Voltage
SYMBOL
L,SD,C
L
etc. connected
CONDITIONS
Oscillation Start-up Voltage I
OUT
=1mA
Oscillation Hold Voltage I
OUT
=1mA
No-Load Input Current I
OUT
=0mA, (Note1)
Supply Current 1 (Note 2) V
IN
=V
OUT ✕
0.95
Supply Current 2 V
IN
=V
OUT
+0.5V
Lx Switch-On Resistance Same as I
DD
1. VL
X
=0.4V
Lx Leakage Current No external components. V
OUT
=VL
X
=10V.
Duty Ratio Same as I
DD
1.
Measuring of L
X
waveform.
Maximum Oscillation Frequency Same as I
DD
1. 58% duty.
Stand-by Current Same as I
DD
1.
CE "High" Voltage Same as I
DD
1.
Existence of Lx Oscillation.
Same as I
DD
1.
Disappearance of Lx Oscillation.
CE "Low" Voltage
CE "High" Current Same as I
DD
1. V
CE
=V
OUT ✕
0.95.
CE "Low" Current Same as I
DD
1. V
CE
=0V.
Lx Limit Voltage
Efficiency L,SD,C
L
etc. connected
Measuring conditions: Unless otherwise specified, connect CE to V
OUT
, V
IN
=V
OUT ✕
0.6, I
OUT
=30mA. See Typical Application Circuits, Fig.2.
1. The Schottky diode (SD) must be type MA735, with reverse current (I
R
)<1.0µA at reverse voltage (V
R
)=10.0V
2. "Supply Current 1" is the supply current while the oscillator is continuously oscillating. In actual operation the oscillator periodically operates
which results in less average power consumption. The current actually provided by an external V
IN
source is represented by "No-Load Input
Current (I
IN
)".
Note
:
V
OUT
V
IN
MIN
2.925
10
V
ST
V
HLD
0.70
I
IN
I
DD
1
I
DD
2
R
SWON
I
LXL
DTY 53
MAXF
OSC
131.75
UNITS
V
V
V
µA
µA
µA
Ω
µA
%
kHz
I
STB
0.5 µA
V
CEH
0.75 V
V
CEL
0.20 V
I
CEH
0.25 µA
I
CEL
–0.25 µA
VLxLMT 0.7 1.1 V
EFFI 80 %
V
MAX
3.075
0.90
9.3
58.7
4.2
7.9
1.0
63
178.25
TYP
3.000
0.80
4.6
29.3
2.1
5.2
58
155
0.5
XC6381
Series
483
4
04S08XC6381 02.09.12 14:52 ページ483
XC6381Series
484
4
Efficiency
XC6381E501MR Ta=25°C V
OUT
=5.0V
PARAMETER
Output Voltage
Maximum Input Voltage
SYMBOL
L,SD,C
L
etc. connected
CONDITIONS
Oscillation Start-up Voltage I
OUT
=1mA
Oscillation Hold Voltage I
OUT
=1mA
No-Load Input Current I
OUT
=0mA,(Note1)
Supply Current 1 (Note 2) V
IN
=V
OUT ✕
0.95
Supply Current 2 V
IN
=V
OUT
+0.5V
Lx Switch-On Resistance Same as I
DD
1. VL
X
=0.4V.
Lx Leakage Current No external components. V
OUT
=VL
X
=10V.
Duty Ratio Same as I
DD
1.
Measuring of L
X
waveform.
Maximum Oscillation Frequency Same as I
DD
1. 58% duty.
Same as I
DD
1. F
OSC
>MAXF
OSC ✕
2
Lx Limit Voltage
L,SD,C
L
etc. connected
Measuring conditions: Unless otherwise specified, connect V
DD
to V
OUT
, V
IN
=V
OUT ✕
0.6, I
OUT
=50mA. See Typical Application Circuits, Fig.3.
1. The Schottky diode (SD) must be type MA735, with reverse current (I
R
)<1.0µA at reverse voltage (V
R
)=10.0V.
2. "Supply Current 1" is the supply current while the oscillator is continuously oscillating. In actual operation the oscillator periodically operates
which results in less average power consumption. The current actually provided by an external V
IN
source is represented by "No-Load Input
Current (I
IN
)".
*When the V
DD
and V
OUT
pins are independently used, the voltage range at the V
DD
pin should be 2.2V to 10V.
The IC operates from V
DD
=0.8V. However, output voltage and oscillator frequency are properly stabilized when V
DD
=2.2V or higher.
Note
:
V
OUT
V
IN
MIN
4.875
10
V
ST
V
HLD
0.70
I
IN
I
DD
1
I
DD
2
R
SWON
I
LXL
DTY 53
MAXF
OSC
131.75
VLxLMT 0.7
MAX
5.125
0.90
10.6
95.7
48
4.3
1.0
63
178.25
1.1
EFFI
TYP
5.000
0.80
5.3
47.8
2.4
2.8
58
155
85
UNITS
V
V
V
µA
µA
µA
Ω
µA
%
kHz
V
%
V
Efficiency
XC6381E301MR Ta=25°C V
OUT
=3.0V
PARAMETER
Output Voltage
Maximum Input Voltage
SYMBOL
L,SD,C
L
etc. connected
CONDITIONS
Oscillation Start-up Voltage I
OUT
=1mA.
Oscillation Hold Voltage I
OUT
=1mA.
No-Load Input Current I
OUT
=0mA(Note1)
Supply Current 1 (Note 2) V
IN
=V
OUT ✕
0.95
Supply Current 2 V
IN
=V
OUT
+0.5V
Lx Switch-On Resistance Same as I
DD
1. VL
X
=0.4V
Lx Leakage Current No external components. V
OUT
=VL
X
=10V
Duty Ratio Same as I
DD
1
Measuring of L
X
waveform.
Maximum Oscillation Frequency Same as I
DD
1. 58% duty.
Same as I
DD
1. F
OSC
>MAXF
OSC ✕
2
Lx Limit Voltage
Efficiency L,SD,C
L
etc. connected
Measuring conditions: Unless otherwise specified, connect V
DD
to V
OUT
, V
IN
=V
OUT ✕
0.6, I
OUT
=30mA. See Typical Application Circuits, Fig.3.
1. The Schottky diode (SD) must be type MA735, with reverse current (I
R
)<1.0µA at reverse voltage (V
R
)=10.0V.
2. "Supply Current 1" is the supply current while the oscillator is continuously oscillating. In actual operation the oscillator periodically operates
which results in less average power consumption. The current actually provided by an external V
IN
source is represented by "No-Load Input
Current (I
IN
)".
*When the V
DD
and V
OUT
pins are independently used, the voltage range at the V
DD
pin should be 2.2V to 10V.
The IC operates from V
DD
=0.8V. However, output voltage and oscillator frequency are properly stabilized when V
DD
=2.2V or higher.
Note
:
V
OUT
V
IN
MIN
2.925
10
V
ST
V
HLD
0.70
I
IN
I
DD
1
I
DD
2
R
SWON
I
LXL
DTY 53
MAXF
OSC
131.75
VLxLMT 0.7
MAX
3.075
0.90
9.3
58.7
4.2
7.9
1.0
63
178.25
1.1
EFFI
TYP
3.000
0.80
4.6
29.3
2.1
5.2
58
155
80
UNITS
V
V
V
µA
µA
µA
Ω
µA
%
kHz
V
%
V
04S08XC6381 02.09.12 14:52 ページ484
SOT-25
(TOPVIEW)
GND
VOUT
SD
54
123
CL
（Tantalum）
L
VIN
VDD
CIN
L : 100µH (SUMIDA, CR-54)
SD : MA2Q735 (Schottky diode; MATSUSHITA)
CL: 16V 47µF (Tantalum capacitor, NICHICON, MCE)
CIN : 16V 220µF (Aluminium Electrolytic Capacitor)
Fig.3 XC6381E Application
SOT-23
(TOPVIEW)
VOUT
SD
21
3
GND
CL
（Tantalum）
L
VIN CIN
L : 100µH (SUMIDA, CR-54)
SD : MA2Q735 (Schottky diode; MATSUSHITA)
CL: 16V 47µF (Tantalum capacitor, NICHICON, MCE)
CIN : 16V 220µF (Aluminium Electrolytic Capacitor)
Fig.1 XC6381A Application
■TypicalApplicationCircuits
XC6381
Series
485
4
L : 100µH (SUMIDA, CR-54)
SD : MA2Q735 (Schottky diode; MATSUSHITA)
CL: 16V 47µF (Tantalum capacitor, NICHICON, MCE)
CIN : 16V 220µF (Aluminium Electrolytic Capacitor)
Fig.2 XC6381C Application
SOT-25
(TOPVIEW)
VOUT
54
2
1 3
CE
SD
GND
CL
（Tantalum）
L
VIN CIN
04S08XC6381 02.09.12 14:52 ページ485
XC6381Series
486
4
■TypicalPerformance
Characteristics
XC6381A301
L=100μH,C=47μF（Tantalum）
100
80
60
40
20
00 20406080100
OutputCurrent:IOUT（mA）
Efficiency:EFFI（％）
0.9V 1.2V 1.5V 1.8V
VIN=2.0V
(2)
EFFICIENCYvs.OUTPUTCURRENT
XC6381A301
OutputCurrent:IOUT（mA）
OutputVoltage:VOUT（V）
3.5
3.0
2.5
2.0
1.5
0.5
1.0
0.0 0 20406080100
VIN=0.9V
1.2V
1.5V
1.8V
2.0V
L=100μH,C=47μF（
Tantalum
）
(1)
OUTPUTVOLTAGEvs.OUTPUTCURRENT
XC6381A301
L=100μH,C=47μF（Tantalum）
100
80
60
40
20
0
RippleVoltage:Vr（mVp-p）
0 20406080100
OutputCurrent:IOUT（mA）
1.5V
1.2V
V
IN
=1.8V
(3)
RIPPLEVOLTAGEvs.OUTPUTCURRENT
04S08XC6381 02.09.12 14:52 ページ486