PB4006 thru PB4010
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Revision: 07-Feb-12 1Document Number: 84808
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Enhanced isoCink+TM Bridge Rectifiers
*Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
FEATURES
• UL recognition file number E312394 (QQQX2) UL
1557 (see *)
• Enhanced high-current density single in-line
package
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
MECHANICAL DATA
Case: PB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1) With heatsink
(2) Without heatsink, free air
PRIMARY CHARACTERISTICS
IF(AV) 40 A
VRRM 600 V, 800 V, 1000 V
IFSM 400 A
IR10 μA
VF at IF = 20 A 0.94 V
TJ max. 150 °C
+
~~-
Case Style PB
+~~ -
-~~+
~
~
isoCink+™
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT
Maximum repetitive peak reverse voltage VRRM 600 800 1000 V
Average rectified forward current (Fig. 1, 2) TC = 87 °C (1)
TA = 25 °C (2) IO40
4.4 A
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C IFSM 400 A
Rating for fusing (t < 8.3 ms) TJ = 25 °C I2t 664 A2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
PB4006 thru PB4010
www.vishay.com Vishay General Semiconductor
Revision: 07-Feb-12 2Document Number: 84808
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward
voltage per diode (1) IF = 20 A TA = 25 °C
TA = 125 °C VF 1.01
0.94
1.10
1.00 V
Reverse current per diode (2) rated VRTA = 25 °C
TA = 125 °C IR -
130
10
500 μA
Typical junction capacitance per diode 4.0 V, 1 MHz CJ 120 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT
Typical thermal resistance RJC (1)
RJA (2)
0.75
18 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
PB4006-E3/45 7.53 45 20 Tube
040 80 160
0
5
15
20
25
45
Case Temperature (°C)
Average Forward Output Current (A)
10
20 60 120
With Heatsink
Sine-Wave, R-Load
100 140
30
T
C
Measurement
40
35
0
1
2
3
5
Ambient Temperature (°C)
Average Forward Rectified Current (A)
050
25 75 100 125 150
4
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
PB4006 thru PB4010
www.vishay.com Vishay General Semiconductor
Revision: 07-Feb-12 3Document Number: 84808
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Dissipation
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
048121620 48
0
10
30
40
100
Average Forward Current (A)
Forward Power Dissipation (W)
20
70
60
50
322824 36 40 44
90
80
0.4 1.2
10
0.1
1
100
0.6 0.8 1.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TA = 150 °C
TA = 125 °C
TA = 25 °C
1.10.5 0.7 0.9
TA = 100 °C
TA = 85 °C
1000
2010 604030 50 70 90 10080
0.01
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.1
T
A
= 100 °C
T
A
= 85 °C
0.1 110 100
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
PB4006 thru PB4010
www.vishay.com Vishay General Semiconductor
Revision: 07-Feb-12 4Document Number: 84808
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type PB
0.066 (1.68)
REF.
0.214 (5.44) REF.
0.633 (16.07)
REF.
0.088 (2.24)
REF.
1.041 (26.44) REF.
0.070 (1.78) REF.
0.161 (4.1)
0.138 (3.5)
0.201 (5.1)
0.177 (4.5)
0.134 (3.4)
0.118 (3.0)
0.145 (3.7)
0.130 (3.3)
0.032 (0.80)
0.024 (0.60)
0.118 (3.0)
0.102 (2.6)
5° TYP. 5° TYP.
120° TYP.
Back Side View
Side View
Front Side View
1.193 (30.3)
1.169 (29.7)
0.799 (20.3)
0.776 (19.7)
0.205 (5.20)
0.189 (4.80)
0.708 (18.0)
0.669 (17.0)
0.165 (4.20)
0.150 (3.80)
0.303 (7.70)
0.287 (7.30)
0.303 (7.70)
0.287 (7.30)
0.402 (10.2)
0.386 (9.80)
0.043 (1.10)
0.035 (0.90)
0.094 (2.40)
0.079 (2.00)
0.106 (2.70)
0.091 (2.30)
0.441 (11.2)
0.425 (10.8)
0.118 (3.0) x 45°
CHAMFER
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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