MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM55DZ/CZ-M,-H Average on-state current ............ 55A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 no t fo Re rN c o ew m m De e n sig d n * IT (AV) * VRRM * * * * APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, E lectric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2-6.5 (DZ) K2 G 2 26 12.5 K2 G2 A1K2 CR1 K1 K1 G1 20 K1 G 1 3-M5 (CZ) Tab#110, t=0.5 K2 G2 A1 LABEL 9 21 30 20 6.5 17.5 A2 CR2 CR1 K1K2 A2 CR2 K1 G1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol Voltage class Parameter M H Unit Repetitive peak reverse voltage 400 800 V Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V no t fo Re rN c o ew m m De e n sig d n VRRM VRSM Symbol Conditions Parameter Ratings Unit 86 A 55 A IT (RMS) RMS on-state current IT (AV) Average on-state current Single-phase, half-wave 180 conduction, TC=86C ITSM Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 1100 A I2t I2t for fusing Value for one cycle of surge current 5.0 x 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125C 100 A/s PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature -40~+125 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Weight Typical value 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Test conditions Parameter Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, VRRM applied -- -- 10 mA IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 10 mA VTM On-state voltage Tj=125C, ITM=165A, instantaneous meas. -- -- 1.35 V dv/dt Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM 500 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 15 -- 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) -- -- 0.5 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) -- -- 0.2 C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 -- -- M -- Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) no t fo Re rN c o ew m m De e n sig d n 1200 1000 10 2 7 5 3 2 Tj=125C 10 1 7 5 3 2 10 0 0.4 0.8 1.2 1.6 2.0 800 600 400 200 2.4 2 3 1 ON-STATE VOLTAGE (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) PER SINGLE ELEMENT 60 50 130 180 120 120 90 =30 40 30 360 20 RESISTIVE, INDUCTIVE LOAD 10 0 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.8 GATE CURRENT (mA) 60 0 50 70100 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -12 3 5 7 10 0 CASE TEMPERATURE (C) AVERAGE ON-STATE POWER DISSIPATION (W) 70 TRANSIENT THERMAL IMPEDANCE (C/W) IFGM=2.0A GATE VOLTAGE (V) VFGM=10V 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 100mA 7 5 Tj=25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 80 20 30 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 5 7 10 10 20 30 40 50 60 70 AVERAGE ON-STATE CURRENT (A) 360 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 =30 60 90 120 180 70 PER SINGLE ELEMENT 60 80 50 0 10 20 30 40 50 60 70 80 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 100 130 270 180 120 90 60 =30 60 40 360 20 0 RESISTIVE, INDUCTIVE LOAD 0 160 20 40 60 70 =30 60 90 180 270 DC 120 50 100 0 120 90 60 30 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 20 20 40 130 =180 40 60 80 100 120 140 160 80 PER SINGLE MODULE 115 110 105 120 180 120 90 100 =30 60 80 360 60 RESISTIVE, INDUCTIVE LOAD 40 20 95 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) 60 90 360 90 120 180 80 100 120 140 160 125 360 120 115 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 =30 60 90 120 85 20 =30 100 LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 160 140 100 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 60 120 RESISTIVE, 85 INDUCTIVE LOAD 80 0 20 40 60 MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 0 40 125 RMS ON-STATE CURRENT (A) 0 20 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) 360 0 80 60 60 0 90 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) 120 80 RESISTIVE, INDUCTIVE LOAD 100 AVERAGE ON-STATE CURRENT (A) 100 80 360 110 AVERAGE ON-STATE CURRENT (A) 140 AVERAGE ON-STATE POWER DISSIPATION (W) CASE TEMPERATURE (C) PER SINGLE ELEMENT 80 PER SINGLE ELEMENT 120 CASE TEMPERATURE (C) AVERAGE ON-STATE POWER DISSIPATION (W) no t fo Re rN c o ew m m De e n sig d n DC LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 80 0 20 40 60 180 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 160 no t fo Re rN c o ew m m De e n sig d n ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) 120 90 120 60 100 120 =30 80 60 360 40 RESISTIVE, INDUCTIVE LOAD 20 0 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) CASE TEMPERATURE (C) (PER SINGLE MODULE) 140 360 110 RESISTIVE, INDUCTIVE LOAD 100 90 =30 80 60 90 120 70 60 50 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999