Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
E lectric furnace temperature control, Light dimmers
TM55DZ/CZ-M,-H
•IT (AV) Average on-state current ............ 55A
•VRRM Repetitive peak reverse voltage
........ 400/800V
•VDRM Repetitive peak off-state voltage
........ 400/800V
•DOUBLE ARMS
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
93.5
80
17.5 20 20 3–M5
2–φ6.5
26
12.5
K1 G1
K2 G2
Tab#110,
t=0.5
30
21
6.5
9
(DZ)
A
1
K
2
CR
1
K
1
K
1
G
1
CR
2
A
2
K
2
G
2
(CZ)
A
1
CR
1
K
1
K
2
K
1
G
1
CR
2
A
2
K
2
G
2
LABEL
not Recommend
for New Design
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, TC=86°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
86
55
1100
5.0 × 103
100
5.0
0.5
10
5.0
2.0
–40~+125
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Limits
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tj=125°C, ITM=165A, instantaneous meas.
Tj=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
10
10
1.35
—
3.0
—
100
0.5
0.2
—
not Recommend
for New Design
Feb.1999
–1
10
–2
10
–3
10
0
10
1
10
0
10
1
10
0
10
4
10
3
10
2
10
1
10
–1
10
3
10
2
10
1
10
0
10
705030207532
200
400
1200
600
800
1000
101 100
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=25°C
0.4
7
5
3
2
7
5
3
2
7
5
3
2
0.8 1.2 2.0 2.41.6
T
j
=125°C
753275327532
0.8
0
7532
0.1
0.2
0.3
0.4
0.5
0.6
0.7
00803010 50 70
80
10
20
30
40
50
60
70
20 40 60
θ=30°
120°
90°
180°
θ
360°
60°
130
50 0608010 20 50
60
70
80
90
100
110
120
30 40 70
θ=30° 60° 90°
θ
360°
120° 180°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-STATE CURRENT (A)
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V) CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
AVERAGE ON-STATE POWER
DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CASE TEMPERATURE (°C)
TIME (s)GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
Feb.1999
00 10020
100
80
20
40 60
40
60
80
θ
360°
θ=30°
60°
270°
DC
180°
120°
90°
130
50
60
70
80
90
100
110
120
0 10020 8040 60
θ=30° 60° DC270°
θ
360°
180°90°
120°
00 1604020
160
60
140
120
100
80
60
40
20
80 100 120 140
θ=180°
60°
90°
30°
θ
360°
θ
120°
80 0 1604020
130
60
85
80
90
95
100
105
110
115
120
125
100 120 140
θ
360°
θθ=30°
120°
180°
60°
90°
00 1606020
160
100
140
120
100
80
60
40
20
12040 80 140
θ=30°
60°
120°
90°
180°
θ
360°
θ
130
80 0 1604020 100 120
85
90
95
100
105
110
115
120
125
60 80 140
θ
360°
θ
θ=30° 60° 90° 180°120°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE POWER
DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
AVERAGE ON-STATE
POWER DISSIPATION (W)
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
Feb.1999
00 1608040
160
120
140
120
100
80
60
40
20
20 14060 100
θ=30°
60° 120°
90°
θ
360°
50 0 1608040
130
120
60
20 14060 100
70
80
90
100
110
120
90°θ=30° 60° 120°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
