SKM75GB12V
© by SEMIKRON Rev. 5 – 23.03.2011 1
SEMITRANS® 2
GB
SKM75GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES Tj=25°C 1200 V
ICTj= 175 °C Tc=25°C 114 A
Tc=80°C 87 A
ICnom 75 A
ICRM ICRM = 3xICnom 225 A
VGES -20 ... 20 V
tpsc
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj=125°C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 97 A
Tc=80°C 73 A
IFnom 75 A
IFRM IFRM = 3xIFnom 225 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 430 A
Tj-40 ... 175 °C
Module
It(RMS) Tterminal =80°C 200 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=75A
VGE =15V
chiplevel
Tj=25°C 1.85 2.30 V
Tj=150°C 2.25 2.55 V
VCE0 Tj=25°C 0.94 1.04 V
Tj=150°C 0.88 0.98 V
rCE VGE =15V Tj=25°C 12.13 16.8 m
Tj=150°C 18.27 20.93 m
VGE(th) VGE=VCE, IC= 3 mA 5.5 6 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj=150°C mA
Cies VCE =25V
VGE =0V
f=1MHz 4.5 nF
Coes f=1MHz 0.44 nF
Cres f=1MHz 0.442 nF
QGVGE = - 8 V...+ 15 V 830 nC
RGint 10.0
td(on) VCC = 600 V
IC=75A
VGE =±15V
RG on =1.3
RG off =1.3
di/dton = 3900 A/µs
di/dtoff =1020A/µs
du/dtoff = 9000 V/
µs
Tj=150°C 258 ns
trTj=150°C 32 ns
Eon Tj=150°C 6.7 mJ
td(off) Tj=150°C 388 ns
tfTj=150°C 62 ns
Eoff Tj=150°C 7.1 mJ
Rth(j-c) per IGBT 0.38 K/W
SKM75GB12V
2 Rev. 5 – 23.03.2011 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF=75A
VGE =0V
chip
Tj=25°C 2.17 2.49 V
Tj=150°C 2.11 2.42 V
VF0 Tj=25°C 1.3 1.5 V
Tj=150°C 0.9 1.1 V
rFTj=25°C 11.6 13.2 m
Tj=150°C 16.1 17.6 m
IRRM IF=75A
di/dtoff =2950A/µs
VGE =±15V
VCC = 600 V
Tj=150°C 85 A
Qrr Tj=150°C 10 µC
Err Tj=150°C 4.2 mJ
Rth(j-c) per diode 0.58 K/W
Module
LCE 30 nH
RCC'+EE' terminal-chip TC=25°C 0.65 m
TC=125°C 1m
Rth(c-s) per module 0.04 0.05 K/W
Msto heat sink M6 3 5 Nm
Mtto terminals M5 2.5 5 Nm
Nm
w160 g
SEMITRANS® 2
GB
SKM75GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
SKM75GB12V
© by SEMIKRON Rev. 5 – 23.03.2011 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
SKM75GB12V
4 Rev. 5 – 23.03.2011 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
SKM75GB12V
© by SEMIKRON Rev. 5 – 23.03.2011 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
SEMITRANS 2
GB
