TIP33 TIP33A TIP33B TIP33C
MAXIMUM RATINGS: (TC=25°C) SYMBOL TIP34 TIP34A TIP34B TIP34C UNITS
Collector-Base Voltage VCBO 40 60 80 100 V
Collector-Emitter Voltage VCEO 40 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 10 A
Peak Collector Current ICM 15 A
Continuous Base Current IB 3.0 A
Power Dissipation (TA=25°C) PD 3.5 W
Power Dissipation PD 80 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 35.7 °C/W
Thermal Resistance ΘJC 1.56 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEO V
CE=30V (TIP33, TIP33A, TIP34, TIP34A) 0.7 mA
ICEO V
CE=60V (TIP33B, TIP33C, TIP34B, TIP34C) 0.7 mA
ICES VCE=Rated VCEO 0.4 mA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=30mA (TIP33, TIP34) 40 V
BVCEO I
C=30mA (TIP33A, TIP34A) 60 V
BVCEO I
C=30mA (TIP33B, TIP34B) 80 V
BVCEO I
C=30mA (TIP33C, TIP34C) 100 V
VCE(SAT) I
C=3.0A, IB=0.3A 1.0 V
VCE(SAT) I
C=10A, IB=2.5A 4.0 V
VBE(ON) V
CE=4.0V, IC=3.0A 1.6 V
VBE(ON) V
CE=4.0V, IC=10A 3.0 V
hFE V
CE=4.0V, IC=1.0A 40
hFE V
CE=4.0V, IC=3.0A 20 100
hfe V
CE=10V, IC=0.5A, f=1.0kHz 20
fT V
CE=10V, IC=0.5A, f=1.0MHz 3.0 MHz
TIP33 TIP33A TIP33B TIP33C NPN
TIP34 TIP34A TIP34B TIP34C PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP33 and TIP34
series devices are complementary silicon high power
transistors manufactured by the epitaxial base process,
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-218 TRANSISTOR CASE
R1 (18-July 2013)
www.centralsemi.com
TIP33 TIP33A TIP33B TIP33C NPN
TIP34 TIP34A TIP34B TIP34C PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-218 TRANSISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (18-July 2013)
