FEATURES
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz) 4 dB (max)
EXCEPTIONAL GAIN (400 MHz) 10 dB (min)
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature -55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation 300mW
Maximum Currents
Gate Current 10mA
Maximum Voltages
Gate to Drain or Gate to Source LS4416 -30V
Gate to Drain or Gate to Source LS4416A -35V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
2N/SST4416 -30
BVGSS Gate to Source
Breakdown Voltage 2N4416A -35 IG = -1µA, VDS = 0V
2N/SST4416 -6
VGS(off) Gate to Source
Cutoff Voltage 2N4416A -2.5 -6
V
VDS = 15V, ID = 1nA
IDSS Gate to Source Saturation Current 5 15 mA VDS = 15V, VGS = 0V
2N -0.1 VGS = -20V, VDS = 0V
IGSS Gate Leakage Current SST -1.0
nA VGS = -15V, VDS = 0V
gfs Forward Transconductance 4500 7500
gos Output Conductance 50
µS VDS = 15V, VGS = 0V, f = 1kHz
Ciss Input Capacitance2 0.8
Crss Reverse Transfer Capacitance2 4
Coss Output Capacitance2 2
pF VDS = 15V, VGS = 0V, f = 1MHz
en Equivalent Input Noise Voltage 6 nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz
*Optional Package For 2N4416
2N SERIES*
TO-92
BOTTOM VIEW
123
SDG
SST SERIES
1
2
3
SOT-23
TOP VIEW
DG
S
2N SERIES
D
S
G
2
1
3
BOTTOM VIEW
TO-72
4
C
Linear Integrated System
2N/SST4416 2N4416A
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
Linear Integrated System
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261