© 2006 IXYS All rights reserved
VCES = 900 V
IC25 = 75 A
VCE(sat) = 2.7 V
tfi typ = 200 ns
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 900 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ900 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C50A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
(RBSOA) Clamped inductive load @ ≤ 600V
PCTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (TO-247, TO-264) 1.13/10Nm/lb.in.
FCMounting force (PLUS247) 20..120 / 4.5..25 N/lb
Weight TO-247 6 g
TO-264 10 g
PLUS247 6 g
DS99393(01/06)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
HiPerFASTTM
IGBT with Fast
Diode
IXGH 50N90B2D1
IXGK 50N90B2D1
IXGX 50N90B2D1
C (TAB)
GCE
TO-247 (IXGH)
B2-Class High Speed IGBT
with Fast Diode
S
G
DC (TAB)
C (TAB)
GCE
PLUS247 (IXGX)
TO-264 (IXGK)
Preliminary Data Sheet
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) min. typ. max.
VGE(th) IC = 250 μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES 50 μA
VGE = 0 V TJ = 150°C1mA
IGES VCE = 0 V, VGE = ± 20 V ± 100 nA
VCE(sat) IC = IC110, VGE = 15 V, Note 1 2.2 2.7 V
TJ = 125°CV
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) min. typ. max.
gfs IC= IC110 ; VCE = 10 V, Note 1 25 40 S
Cies 2500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 205 pF
Cres 75 pF
Qg135 nC
Qge IC = IC110 , VGE = 15 V, VCE = 0.5 VCES 23 nC
Qgc 50 nC
td(on) 20 ns
tri 28 ns
td(off) 350 500 ns
tfi 200 ns
Eoff 4.7 7.5 mJ
td(on) 20 ns
tri 28 ns
Eon 1.5 mJ
td(off) 400 ns
tfi 420 ns
Eoff 8.7 mJ
RthJC 0.31 K/W
RthCH 0.21 K/W
Inductive load
IC = IC110, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
Inductive load, TJ = 125°°
°°
°C
IC = IC110, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
Diode
Symbol Conditions Maximum Ratings
IF25 TC = 115°C 30 A
Symbol Conditions Characteristic Values
(TJ = 25°C unless otherwise specified ) min. typ. max.
VFIF = 30 A; Note 1 2.5 2.75 V
TVJ = 150°C 1.8 V
IRM IF = 10 A; diF/dt = -100 A/μs; TVJ = 100°C 5.5 11.5 A
trr VR = 100 V; VGE = 0 V 200 ns
RthJC 0.9 K/W
RthCH with heat transfer paste 0.25 K/W
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
© 2006 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
50
100
150
200
250
300
03691215
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
7V
9V
11V
13 V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
70
80
90
100
00.511.522.533.544.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
C E
- Volts
I
C
- Amperes
V
GE
=15V
13V
11V
9V
5V
7V
Fig. 4. Dependence of V
CE(sat )
on
Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalized
I
C
= 50A
I
C
= 25A
V
GE
= 15V I
C
= 100A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Emitter voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
5 6 7 8 9 10 11 12 13 14 15
V
G E
- Volts
V
C E
- Volts
T
J
= 25
º
C
I
C
= 100A
50A
25A
Fig. 6. Input Adm ittance
0
25
50
75
100
125
150
175
200
225
250
3456789101112
V
G E
- Volts
I
C
- Amperes
T
J
= -40
º
C
25
º
C
125
º
C
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
0 25 50 75 100 125 150 175 200 225
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
5
10
15
20
25
30
35
40
0 30 6090120150
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 25A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 50A
I
C
= 100A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
2
4
6
8
10
12
14
16
18
20
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
2
4
6
8
10
12
14
16
18
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 100A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V I
C
= 50A
I
C
= 25A
Fig. 11. Dependence of Turn-off
Switching Time on R
G
200
300
400
500
600
700
800
900
1000
1100
1200
1300
5 101520253035404550
R
G
- Ohms
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 720V
I
C
= 100A
50A
25A
I
C
= 25A
50A
100A
Fig. 12. Dependence of Turn-off
Switching Time
on I
C
150
200
250
300
350
400
450
500
550
600
20 30 40 50 60 70 80 90 100
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
© 2006 IXYS All rights reserved
Fig. 14. Gate Charge
0
1.5
3
4.5
6
7.5
9
10.5
12
13.5
15
0 20 40 60 80 100 120 140
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 450V
I
C
= 50A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Switching Time on Temperature
150
200
250
300
350
400
450
500
550
600
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
=
5 Ω
V
GE
=
15 V
V
CE
=
720V
I
C
= 100A
50A
25A
I
C
= 25A
50A
100A
Fig. 16. Re ve r s e -Bias Safe
Operating Area
0
10
20
30
40
50
60
70
80
90
100
110
100 200 300 400 500 600 700 800 900
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
Fig. 17. Maximum Transient Thermal Resistance
0.01
0.1
1
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
200 600 10000 400 800
120
140
160
180
200
220
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
50
60
100 1000
0
1
2
3
4
5
01234
0
10
20
30
40
50
60
70
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
μC
A/μsA/μs
trr
ns
tfr
ZthJC
A/μs
μs
2
Fig. 20. Peak reverse current IRM
versus -diF/dt
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
Fig. 18. Forward current IF versus VF
Qr
IRM
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
Fig. 22. Recovery time trr versus -diF/dt Fig. 23. Peak forward voltage VFR and
tfr versus diF/dt
tfr VFR
Fig. 24 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF=15A
TVJ= 100°C
IF = 30A
IF= 60A
IF= 30A
IF=15A
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
TVJ= 25°C
TVJ=100°C
TVJ=150°C
© 2006 IXYS All rights reserved
Package Outlines
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
PLUS 247TM Outline TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a subjective pre-
production design evaluation. IXYS reserves the right to change limits, test conditions, and
dimensions without notice.
