BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
■SGS-THOMSONPREFERRED SALESTYPES
■HIGH VOLTAGECAPABILITY
■U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734(N)
■JEDEC TO-3 METALCASE
■NPN TRANSISTORWITH INTEGRATED
FREEWHEELINGDIODE
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds. INTERNAL SCHEMATIC DIAGRAM
June 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB= 0) 700 V
VEBO Emitter-Base Voltage (IC=0) 10 V
I
CCollector Current 8 A
ICM Collector Peak Current (tp<5ms) 15 A
TO - 3 TO - 218 ISOWATT218
Ptot Total Dissipation at Tc=25o
C 150 125 50 W
Tstg Storage Temperature -65 to 150 -65 to 150 -65 to 150 oC
TjMax. Operating Junction Temperature 150 150 150 oC
123
TO-218 ISOWATT218 123
12
TO-3
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