Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 V RDS(ON) = 0.16 @ VGS= 4.5 V. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. _______________________________________________________________________________ D S G Absolute Maximum Ratings Symbol T A = 25C unless otherwise noted Parameter NDS331N Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage - Continuous 8 V ID Maximum Drain Current - Continuous 1.3 A (Note 1a) - Pulsed PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range 10 0.5 (Note 1a) W 0.46 (Note 1b) -55 to 150 C 250 C/W 75 C/W THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Semiconductor Components Industries, LLC, 2017 January, 2017, Rev. E Publication Order Number: NDS331N 1 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor www.onsemi.com Symbol Parameter Conditions Min Typ Max Units 1 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS= 0 V 20 V 10 A IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA V TJ =125C ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A TJ =125C RDS(ON) Static Drain-Source On-Resistance 0.5 0.7 1 0.3 0.53 0.8 0.15 0.21 0.24 0.4 0.11 0.16 VGS = 2.7 V, ID = 1.3 A TJ =125C VGS = 4.5 V, ID = 1.5 A ID(ON) On-State Drain Current gFS Forward Transconductance VGS = 2.7 V, VDS = 5 V 3 VGS = 4.5 V, VDS = 5 V 4 A VDS = 5 V, ID = 1.3 A, 3.5 S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 162 pF 85 pF 28 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time 5 20 ns 25 40 ns tD(off) tf Turn - Off Delay Time 10 20 ns Turn - Off Fall Time 5 20 ns 3.5 5 nC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 5 V, ID = 1 A, VGS = 5 V, RGen = 6 VDS = 5 V, ID = 1.3 A, VGS = 4.5 V www.onsemi.com 2 0.3 nC 1 nC NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 0.42 A 10 A 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.8 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. PD(t ) = T J- TA R J A(t ) = T J-TA R J C+RCA(t ) = I 2D (t ) x RDS (ON ) TJ Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper. 1a 1b Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. www.onsemi.com 3 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor Electrical Characteristics (TA = 25C unless otherwise noted) I D , DRAIN-SOURCE CURRENT (A) VGS =4.5V 2.0 2.7 3.0 3 1.75 2.5 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 2 1.5 1 0 0 V DS 1 2 , DRAIN-SOURCE VOLTAGE (V) 1.5 VGS = 2.0V 1.25 2.5 0.5 3 0 RDS(on) , NORMALIZED 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.5 1 D 1.5 2 , DRAIN CURRENT (A) VGS = 2.7 V 2.5 3 1.25 25C 1 -55C 0.75 0.5 150 0 25C I D, DRAIN CURRENT (A) V th, NORMALIZED 2 1 0.5 V GS 2.5 3 Figure 4. On-Resistance Variation with Drain Current and Temperature. 125C 3 1 1.5 2 I , DRAIN CURRENT (A) 1.3 T = -55C J V DS = 5.0V 0.5 D 1 1.5 2 , GATE TO SOURCE VOLTAGE (V) 2.5 GATE-SOURCE THRESHOLD VOLTAGE 4 TJ = 125C 1.5 Figure 3. On-Resistance Variation with Temperature. 0 I 4.5 1.75 I D = 1.3A VGS = 2.7V 1.4 0 3.5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.6 -50 3.0 0.75 Figure 1. On-Region Characteristics. 1.6 2.7 1 I D = 250A 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 3 V DS = V GS 1.2 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 Figure 6. Gate Threshold Variation with Temperature. Figure 5. Transfer Characteristics. www.onsemi.com 4 150 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Electrical Characteristics I D = 250A I , REVERSE DRAIN CURRENT (A) 1.08 1.04 1 0.96 0.92 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 0.1 TJ = 125C 25C 0.01 -55C 0.001 0.0001 150 5 V GS , GATE-SOURCE VOLTAGE (V) 400 200 C iss 100 C oss 50 10 0.1 0.2 0.4 0.6 0.8 1 V , BODY DIODE FORWARD VOLTAGE (V) C rss f = 1 MHz V GS = 0V 0.2 V DS 0.5 1 2 5 , DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 9. Capacitance Characteristics. R GEN 3 2 1 0 0 1 2 3 Q g , GATE CHARGE (nC) 4 5 Figure 10. Gate Charge Characteristics. t d(on) RL tr t off t d(off) tf 90% 90% V OUT VOUT 10% DUT G 10V 15V 4 t on D VGS V DS = 5V ID = 1.3A VDD V IN 1.2 Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature. 600 20 0 SD Figure 7. Breakdown Voltage Variation with Temperature. CAPACITANCE (pF) V GS = 0V S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1 1.12 10% 90% V IN S 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. www.onsemi.com 5 INVERTED NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (continued) VDS = 5.0V THIS AREA IS LIMITED BY rDS(on) 6 25C 125C 4 10 ID, DRAIN CURRENT (A) T J = -55C 2 100 s 1 ms 1 10 ms SINGLE PULSE TJ = MAX RATED 0.1 g 0 0 1 2 ID , DRAIN CURRENT (A) 3 RJA = 270 oC/W 0.01 0.1 4 CURVE BENT TO MEASURED DATA 10 60 Figure 14. Maximum Safe Operating Area. 1.8 I D , STEADY-STATE DRAIN CURRENT (A) 1 0.8 1.6 0.6 1a 1.4 1b 0.4 1a 1.2 0.2 0 1 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature. STEADY-STATE POWER DISSIPATION (W) 100 ms TA = 25 oC FS , TRANSCONDUCTANCE (SIEMENS) 50 8 4.5"x5" FR-4 Board TA = 25 oC Still Air 0 0.1 0.2 0.3 2oz COPPER MOUNTING PAD AREA (in 2 ) 0.4 1 Figue 15. SuperSOTTM _ 3 Maximum Steady-State Power Dissipation. versus Copper Mounting Pad Area. 4.5"x5" FR-4 Board TA = 25 oC Still Air VGS = 2.7V 1b 0 0.1 0.2 0.3 2 2oz COPPER MOUNTING PAD AREA (in ) 0.4 Figure 16. Maximum Steady-State Drain Current versus Copper Mounting Pad. Area 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 ZJA(t) = r(t) x RJA RJA = 270 oC/W Peak TJ = PDM x ZJA(t) + TA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 17. Transient Thermal Response Curve. Note : Thermal characterization performed using the conditions described in note 1b. response will change depending on the circuit board design. www.onsemi.com 6 100 1000 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (continued) 2.920.12 0.95 A 3 1.40 B 1.400.12 1 2.20 2 0.508 0.382 (0.29) 0.10 0.95 M 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.12 MAX 0.10 0.00 (0.94) 0.10 C M C 2.510.20 GAGE PLANE NOTES: UNLESS OTHERWISE SPECIFIED 0.178 0.102 0.20 0.43 0.33 (0.56) SCALE: 50:1 SEATING PLANE A) NO JEDEC REFERENCE AS OF AUGUST 2003 B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 2009. E) DRAWING FILE NAME: MKT-MA03BREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com