2N4126 MMBT4126
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch-
ing applications at collector currents to 10 µA as a switch and to
100 mA as an amplifier.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A= 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Parameter Value Units
VCEO Collector-Emi t t er Voltage 25 V
VCBO Collector-Base Voltage 25 V
VEBO Emitter-Base Voltage 4.0 V
ICCollector Current - Continuo us 200 mA
TJ, Tst
g
Operating and Storage Junction Temperature Ra nge -55 to +150 °C
Symbol Characteristic Max Units
2N4126 *MMBT4126
PDTotal De vice Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Jun ction to Case 83.3 °C/W
RθJ
A
Thermal Resistance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: ZF
2001 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N4126 / MMBT4126
2N4126/MMBT4126, Rev A
2N4126 / MMBT4126
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
(
BR
)
CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 25 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IC = 10 µA, IC = 0 4.0 V
ICBO Collector Cutoff Current VCB = 20 V, IE = 0 50 nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
hFE DC Current Gain IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V 120
60 360
VCE(sat)Collecto r-Emitter Sa tu ratio n Voltage IC = 50 mA, IB = 5.0 mA 0.4 V
VBE(sat)Base-Emi tter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 250 MHz
Cibo Input Capacita nce VEB = 0.5 V, IC = 0,
f = 1.0 MHz 10 pF
Ccb Collector-Base Capcitance VCB = 5.0 V, IE = 0,
f = 100 kHz 4.5 pF
hfe Small-Signal Current Gain IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz 120 480
NF Noise Figu r e IC = 100 µA, VCE = 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz 4.0 dB
PNP General Purpose Amplifier
(continued)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N4126 / MMBT4126
Typical Characteristics
Common-B ase Op en Circuit
Input and O ut put Capacitance
vs Rever se Bias Voltage
0.1 1 10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
PNP General Purpose Amplifier
(continued)
Typi cal Pu lsed Cu rr en t Gain
vs Colle c t or Curre n t
0.1 0.2 0.5 1 2 5 10 20 50 100
50
100
150
200
250
I - COLLECTOR C URRENT (m A )
h - T YPICA L PULSED CURR ENT GAIN
C
FE
125 ° C
25 ° C
- 40 °C
V = 1.0V
CE
Colle c t or- E mit te r Sat ura t ion
V olta ge vs Colle c tor Current
110100200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V - COLLEC TOR EMITTER VOLTAGE (V)
C
CESAT
25 °C
- 4 0 °C
125°C
β= 10
B ase-Emitter Saturatio n
Vo ltage vs C o llector Cu r rent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Voltage vs
Collect or Curre nt
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - B ASE EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 1V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C uto ff Cu r rent
vs A mb ient Temp eratu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE NT TEMP E RATU RE ( C)
I - COLLECTOR CURR ENT (nA)
A
CBO
°
V = 25V
CB
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - PO WER DISSIPATION ( W )
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figur e vs Fr eque ncy
0.1 1 10 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOIS E FIGURE ( d B)
I = 10 0 µA, R = 200Ω
C
V = 5.0V
CE
S
I = 10 0 µA, R = 2.0 kΩ
CS
I = 1.0 mA, R = 200Ω
CS
Nois e F igure v s Source Res istan ce
0.1 1 10 100
0
2
4
6
8
10
12
R - SO URCE RE SISTAN CE ( )
NF - NOISE FIGURE (dB)
kΩ
I = 100 µA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Time s
vs Collec to r C urren t
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (m A)
TIME (nS)
I = I = tr
t
s
B1
C
B2 Ic
10
tf
td
Tu rn On and Turn Of f Times
vs Collector Current
1 10 100
1
10
100
500
I - CO LL ECTOR CU RRENT (mA)
TIME (nS)
I = I =
t
off
B1 B2 Ic
10
t
on
V = 0.5V
BE(OFF)
t I =
on
t
off
B1 Ic
10
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
2N4126 / MMBT4126
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Input Impe da n c e
0.1 1 10
0.1
1
10
I - COL LE CT OR CU RR ENT ( mA )
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
Ω
Outp ut Admi tta n ce
0.1 1 10
10
100
1000
I - COL LECTOR CURRE NT ( mA)
h - OUTPUT A DMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kHz
µ
Cur rent Gain
0.1 1 10
10
20
50
100
200
500
1000
I - COLLECTO R CURRENT (mA)
h - CURRENT GA IN
V = 10 V
CE
C
fe
f = 1.0 kHz
Vol tage Feed back Ratio
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - VOLTAGE FEEDBACK RA TIO (x 10 )
C
re
_4
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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