BCV46T - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 Apr 08 2004 Jan 13

DISCRETE SEMICONDUCTORS

BCV26; BCV46

PNP Darlington transistors

2004 Jan 13 2

Philips Semiconductors Product speciﬁcation

PNP Darlington transistors BCV26; BCV46

FEATURES

•High current (max. 500 mA)

•Low voltage (max. 60 V)

•Very high DC current gain (min. 10000).

APPLICATIONS

•Where very high amplification is required.

DESCRIPTION

PNP Darlington transistor in a SOT23 plastic package.

NPN complements: BCV27 and BCV47.

MARKING

Note

1. * = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BCV26 FD*

BCV46 FE*

PIN DESCRIPTION

1 base

2 emitter

3 collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

MAM299

TR2

TR1

Top view

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCV26 −plastic surface mounted package; 3 leads SOT23

BCV46

2004 Jan 13 3

Philips Semiconductors Product speciﬁcation

PNP Darlington transistors BCV26; BCV46

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BCV26 −−40 V

BCV46 −−80 V

VCES collector-emitter voltage VBE =0

BCV26 −−30 V

BCV46 −−60 V

VEBO emitter-base voltage open collector −−10 V

ICcollector current (DC) −−500 mA

ICM peak collector current −−800 mA

IBbase current (DC) −−100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

2004 Jan 13 4

Philips Semiconductors Product speciﬁcation

PNP Darlington transistors BCV26; BCV46

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current

BCV26 IE= 0; VCB =−30 V −−−100 nA

BCV46 IE= 0; VCB =−60 V −−−100 nA

IEBO emitter cut-off current IC= 0; VEB =−10 V −−−100 nA

hFE DC current gain IC=−1 mA; VCE =−5 V; (see Fig.2)

BCV26 4000 −−

BCV46 2000 −−

DC current gain IC=−10 mA; VCE =−5 V; (see Fig.2)

BCV26 10000 −−

BCV46 4000 −−

DC current gain IC=−100 mA; VCE =−5 V; (see Fig.2)

BCV26 20000 −−

BCV46 10000 −−

VCEsat collector-emitter saturation

voltage IC=−100 mA; IB=−0.1 mA −−−1V

VBEsat base-emitter saturation voltage IC=−100 mA; IB=−0.1 mA −−−1.5 V

VBEon base-emitter on-state voltage IC=−10 mA; VCE =−5V −−−1.4 V

fTtransition frequency IC=−30 mA; VCE =−5 V; f = 100 MHz −220 −MHz

Fig.2 DC current gain; typical values.

VCE =−2V.

handbook, full pagewidth

100000

20000

40000

60000

80000

hFE

MGD836

−1−10 IC (mA)

−102−103

2004 Jan 13 5

Philips Semiconductors Product speciﬁcation

PNP Darlington transistors BCV26; BCV46

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

2004 Jan 13 6

Philips Semiconductors Product speciﬁcation

PNP Darlington transistors BCV26; BCV46

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Contact information

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Printed in The Netherlands R75/05/pp7 Date of release: 2004 Jan 13 Document order number: 9397 750 12401